嵌入式ADC電磁敏感度的溫度效應分析與實驗
發(fā)布時間:2018-03-25 08:02
本文選題:電磁兼容 切入點:電磁敏感度 出處:《強激光與粒子束》2017年05期
【摘要】:模數(shù)轉(zhuǎn)換器(ADC)在測控系統(tǒng)中應用廣泛,針對嵌入式ADC復雜環(huán)境下的電磁敏感性問題,通過理論分析和實驗測量研究了環(huán)境溫度對其電磁敏感度的影響。結(jié)合ADC結(jié)構(gòu)與特性,分析了射頻信號對ADC的干擾機制,指出了環(huán)境溫度對干擾信號作用下的金屬氧化物半導體(MOS)漏電流的影響。在不同溫度下,測量、分析了電磁干擾下各部分電路參數(shù)的變化情況。并在10 MHz~1 GHz頻率范圍、-10~80℃溫度范圍內(nèi)測量了ADC電磁敏感度的溫度效應。結(jié)果表明,變化的環(huán)境溫度會通過影響MOS晶體管的遷移率,改變其在電磁干擾下的響應,造成ADC電磁敏感度隨環(huán)境溫度變化發(fā)生顯著漂移。
[Abstract]:ADC is widely used in the measurement and control system. Aiming at the electromagnetic sensitivity of embedded ADC in complex environment, the influence of ambient temperature on its electromagnetic sensitivity is studied by theoretical analysis and experimental measurement, combining with the structure and characteristics of ADC. The interference mechanism of RF signal to ADC is analyzed, and the effect of ambient temperature on leakage current of metal oxide semiconductor MOSs under interference signal is pointed out. The variation of circuit parameters under electromagnetic interference is analyzed, and the temperature effect of electromagnetic sensitivity of ADC is measured in the temperature range of 10 MHz~1 GHz frequency range of -1080 鈩,
本文編號:1662232
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