本文選題：InSb薄膜　切入點(diǎn)：Zn摻雜　出處：《稀有金屬》2017年09期

【摘要】：研究了Zn摻雜InSb蒸鍍薄膜雜質(zhì)濃度和熱處理?xiàng)l件對(duì)其電性能的影響。InSb薄膜采用三溫度法在云母基片上制備,利用蒸鍍Zn擴(kuò)散后進(jìn)行區(qū)熔再結(jié)晶的方法摻雜Zn雜質(zhì)。在進(jìn)行區(qū)熔再結(jié)晶時(shí)為了防止InSb分解和Sb的蒸發(fā),用磁控濺射方法在InSb薄膜上生長(zhǎng)厚度為300 nm的Si O2。測(cè)試結(jié)果表明最好的熱處理?xiàng)l件為Ar氣氛溫度200℃、熔融區(qū)的移動(dòng)速度1×10-5m·s~(-1)和熔融區(qū)通過數(shù)3。Zn成為受主,室溫下測(cè)量Zn摻雜濃度為1.47×1022m-3的InSb薄膜的電子遷移率為5.65 m2·V-1·s~(-1)。Zn的摻雜濃度大于1.47×1022m-3時(shí)電子遷移率急劇減少,最大的霍爾常數(shù)為385 cm3·C-1。在1.5 T磁場(chǎng)下Zn摻雜濃度為3.16×1022m-3時(shí),InSb薄膜電阻率的相對(duì)變化達(dá)到最大值為3.63,是未摻雜薄膜的2.46倍。
[Abstract]:The effects of impurity concentration and heat treatment conditions on the electrical properties of Zn doped InSb evaporated thin films were studied. InSb thin films were prepared on mica substrates by three temperature method. In order to prevent the decomposition of InSb and the evaporation of SB, Zn impurity is doped in the method of zone melting and recrystallization by using the method of evaporating Zn after diffusion of Zn, in order to prevent the decomposition of InSb and the evaporation of SB. Sio _ 2 with thickness of 300nm was grown on InSb thin films by magnetron sputtering. The results show that the best heat treatment conditions are ar atmosphere temperature 200 鈩，

本文編號(hào)：1657596