本文選題：碳化硅MOSFET　切入點：寄生電感　出處：《半導體技術》2017年03期

【摘要】：相比于傳統(tǒng)的Si IGBT功率器件而言,碳化硅MOSFET可達到更高的開關頻率、更高的工作溫度以及更低的功率損耗。然而,快速的暫態(tài)過程使開關性能對回路的寄生參數(shù)更加敏感。因此,為了評估寄生電感對碳化硅MOSFET開關性能的影響,基于回路電感的概念,將柵極回路寄生電感、功率回路寄生電感以及共源極寄生電感等效成3個集總電感,并且從關斷過電壓、開通過電流及開關損耗等3個方面,對這3個電感對Si C MOSFET開關性能的影響進行了系統(tǒng)的對比研究。研究表明:共源極寄生電感對開關的影響最大,功率回路寄生電感次之,而柵極回路寄生電感影響最小。最后,基于實驗分析結果,為高速開關電路的布局提出了一些值得借鑒的意見。
[Abstract]:Compared with conventional Si IGBT power devices, sic MOSFET can achieve higher switching frequency, higher operating temperature and lower power loss. The fast transient process makes the performance of the switch more sensitive to the parasitic parameters of the circuit. Therefore, in order to evaluate the effect of parasitic inductance on the performance of silicon carbide MOSFET switch, based on the concept of loop inductance, the parasitic inductance of gate circuit is introduced. The parasitic inductance of power loop and the parasitic inductance of common source are equivalent to three lumped inductors, and from the aspects of switching off overvoltage, switching on overcurrent and switching loss, etc. The effects of the three inductors on the performance of sic MOSFET switches are compared. The results show that the parasitic inductance of common source is the most important, the parasitic inductance of power loop is the second, and the parasitic inductance of gate loop is the least. Finally, Based on the experimental results, some suggestions for the layout of high-speed switching circuits are put forward.
【作者單位】： 華北電力大學新能源電力系統(tǒng)國家重點實驗室;全球能源互聯(lián)網(wǎng)研究院;
【基金】：國家科技部項目(2016YFB0400503)
【分類號】：TN386

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