基于曲率補償技術(shù)的帶隙基準(zhǔn)電路設(shè)計
發(fā)布時間:2018-03-23 23:17
本文選題:帶隙基準(zhǔn)電路 切入點:高階曲率補償 出處:《半導(dǎo)體技術(shù)》2017年02期
【摘要】:提出了一種新的曲率補償帶隙基準(zhǔn)電路,首先通過一個雙差分輸入放大器(DDIA)來產(chǎn)生一個絕對溫度互補電壓。然后通過這個電壓與另一個DDIA對曲率補償進行微調(diào),得到一個高階曲率補償?shù)膸痘鶞?zhǔn)電壓。采用0.5μm CMOS工藝技術(shù)對文中所設(shè)計的電路進行流片驗證,得到在-40~125℃內(nèi),帶隙基準(zhǔn)電壓源的溫度系數(shù)為4.1×10-6/℃,當(dāng)電源電壓在2.7~5 V時,帶隙基準(zhǔn)電路的輸出電壓穩(wěn)定在1.3 V左右。此外,該電路具有較高的電源抑制比(PSRR),當(dāng)頻率小于1 k Hz時,其電源抑制比為-82 d B,而當(dāng)頻率在10 k Hz時,其電源抑制比為-75 d B。
[Abstract]:In this paper, a new curvature compensated bandgap reference circuit is proposed, in which an absolute temperature complementary voltage is generated by a double differential input amplifier (DDIA), and then the curvature compensation is fine-tuned with another DDIA. A bandgap reference voltage with high order curvature compensation is obtained. The designed circuit is verified by using 0.5 渭 m CMOS technology. The temperature coefficient of the bandgap voltage reference source is 4.1 脳 10 ~ (-6) / 鈩,
本文編號:1655650
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