本文選題：氮化鎵　切入點(diǎn)：功率放大器　出處：《半導(dǎo)體技術(shù)》2016年04期 　論文類型：期刊論文

【摘要】：基于0.25μm Ga N HEMT工藝,研制了一款S波段Ga N功率放大器單片微波集成電路(MMIC)。該電路采用三級(jí)拓?fù)浞糯蠼Y(jié)構(gòu),提高了放大器的增益;采用電抗匹配方式,減小了電路輸出級(jí)的損耗,提高了MMIC的功率和效率。輸出級(jí)有源器件的布局優(yōu)化,改善了放大器芯片的溫度分布特性。測(cè)試結(jié)果表明,在2.8~3.6 GHz測(cè)試頻帶內(nèi),在脈沖偏壓28 V(脈寬100μs,占空比10%)時(shí),峰值輸出功率大于60W,功率附加效率大于45%,小信號(hào)增益大于34 d B,增益平坦度在±0.3 d B以內(nèi),輸入電壓駐波比在1.7以下;在穩(wěn)態(tài)偏壓28 V時(shí),連續(xù)波飽和輸出功率大于40 W,功率附加效率38%以上。該MMIC尺寸為4.2 mm×4.0 mm。
[Abstract]:Based on the technology of 0.25 渭 m gan HEMT, a monolithic microwave integrated circuit for S-band gan power amplifier is developed. The circuit adopts a three-stage topology amplifier structure, which improves the gain of the amplifier, and adopts reactance matching method. The loss of the output stage is reduced, the power and efficiency of the MMIC are improved, the layout of the output active device is optimized, and the temperature distribution characteristics of the amplifier chip are improved. The test results show that, in the 2.83.6 GHz test band, When the pulse bias voltage is 28 V (pulse width 100 渭 s, duty cycle 10), the peak output power is greater than 60 W, the power additional efficiency is more than 45W, the small signal gain is more than 34 dB, the gain flatness is less than 鹵0.3 dB, and the input voltage standing wave ratio is below 1.7. The output power of continuous wave saturation is more than 40 W, and the additional power efficiency is more than 38%. The size of the MMIC is 4.2 mm 脳 4.0 mm.
【作者單位】： 中國(guó)電子科技集團(tuán)公司第十三研究所專用集成電路國(guó)家重點(diǎn)實(shí)驗(yàn)室;中國(guó)電子科技集團(tuán)公司第十三研究所;
【分類號(hào)】：TN722.75

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