本文選題：SG-RSO　切入點(diǎn)：MOSFET　出處：《微電子學(xué)》2017年04期 　論文類(lèi)型：期刊論文

【摘要】：為了降低傳統(tǒng)溝槽MOSFET的導(dǎo)通電阻和柵漏電容,科研人員提出一種具有電荷平衡結(jié)構(gòu)的SG-RSO MOSFET。在此基礎(chǔ)上,利用電荷平衡理論計(jì)算出SG-RSO MOSFET結(jié)構(gòu)的主要參數(shù),并借助TCAD仿真軟件對(duì)外延層厚度及其摻雜濃度、場(chǎng)板氧化層厚度和溝槽深度等主要參數(shù)進(jìn)行合理優(yōu)化設(shè)計(jì)。最終,仿真得到擊穿電壓為92.6 V、特征導(dǎo)通電阻為19.01 mΩ·mm~2、特征柵漏電容為1.45 n F·cm~(-2)的SG-RSO MOSFET。該器件性能優(yōu)于傳統(tǒng)溝槽MOSFET。
[Abstract]:In order to reduce the on-resistance and gate leakage capacitance of conventional grooved MOSFET, a novel SG-RSO MOSFET with charge balance structure is proposed. Based on this, the main parameters of SG-RSO MOSFET structure are calculated by charge balance theory. The main parameters such as the thickness of the epitaxial layer and its doping concentration, the thickness of the oxide layer and the depth of the grooves of the field plate are optimized by means of the TCAD simulation software. The SG-RSO MOSFETs with a breakdown voltage of 92.6 V, a characteristic on-resistance of 19.01 m 惟 mm ~ (-2) and a characteristic gate leakage capacitance of 1.45 n F / cm ~ (-2) are obtained. The performance of the device is superior to that of the conventional grooved MOSFETs.
【作者單位】： 中國(guó)科學(xué)院微電子研究所;中國(guó)科學(xué)院硅器件技術(shù)重點(diǎn)實(shí)驗(yàn)室;中國(guó)科學(xué)院大學(xué);
【基金】：國(guó)家重點(diǎn)研發(fā)計(jì)劃資助項(xiàng)目(2016YFB0901800)
【分類(lèi)號(hào)】：TN386

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1 王欣欣;有機(jī)發(fā)光二極管的電荷平衡機(jī)理研究[D];蘇州大學(xué);2014年

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本文編號(hào)：1649908