發(fā)布時(shí)間：2018-03-22 16:44

  本文選題：絕緣柵雙極型晶體管(IGBT)　切入點(diǎn)：載流子　出處：《半導(dǎo)體技術(shù)》2016年10期 　論文類型：期刊論文

【摘要】：發(fā)射極載流子增強(qiáng)技術(shù)作為絕緣柵雙極型晶體管(IGBT)器件所特有的技術(shù)手段,是進(jìn)一步改善IGBT導(dǎo)通飽和壓降和關(guān)斷損耗折中性能的關(guān)鍵所在。在經(jīng)歷了20多年的發(fā)展之后,發(fā)射極載流子濃度增強(qiáng)的技術(shù)無(wú)論從結(jié)構(gòu)和性能上都得到了巨大的提升。概述了IGBT載流子增強(qiáng)技術(shù)的發(fā)展過(guò)程,針對(duì)IGBT中的載流子分布,分析了載流子增強(qiáng)技術(shù)的物理機(jī)制,介紹了傳統(tǒng)載流子增強(qiáng)技術(shù)所采用的器件結(jié)構(gòu)及實(shí)現(xiàn)方法,包括注入增強(qiáng)型絕緣柵雙極型晶體管(IEGT),載流子存儲(chǔ)層結(jié)構(gòu)的溝槽型雙極型晶體管(CSTBT),高導(dǎo)電率IGBT(Hi GT),平面增強(qiáng)結(jié)構(gòu)IGBT,以及最近幾年較新型的介質(zhì)阻擋層IGBT,局部窄臺(tái)面IGBT,p型埋層CSTBT等。著重討論了每種器件的結(jié)構(gòu)特點(diǎn)以及性能上的改善。載流子增強(qiáng)技術(shù)將是新一代IGBT器件設(shè)計(jì)的一個(gè)主要技術(shù)手段。
[Abstract]:Emitter carrier enhancement technology, as a special technical means of insulated gate bipolar transistor (IGBT) devices, is the key to further improve the performance of IGBT on saturation voltage drop and turn-off loss. After more than 20 years of development, The technology of emitter carrier concentration enhancement has been greatly improved both in structure and performance. The development process of IGBT carrier enhancement technology is summarized, and the physical mechanism of carrier enhancement technology in IGBT is analyzed. This paper introduces the device structure and implementation method of traditional carrier enhancement technology. These include Injection-Enhanced Insulated Gate bipolar transistors (IEGTTs), trench bipolar transistors with carrier storage layer structures, high conductivity IGBT(Hi GTTs, plane enhanced bipolar transistors, and newer dielectric barrier layers, local narrow countertops, in recent years. The structure characteristics and performance improvement of each kind of device are discussed emphatically. Carrier enhancement technology will be one of the main technical means in the design of new generation IGBT devices.
【作者單位】： 江蘇物聯(lián)網(wǎng)研究發(fā)展中心;中國(guó)科學(xué)院中國(guó)科學(xué)院大學(xué);中國(guó)科學(xué)院微電子研究所 硅器件技術(shù)重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家重大科技專項(xiàng)資助項(xiàng)目(2013ZX02305-005-002) 國(guó)家自然科學(xué)基金資助項(xiàng)目(51490681) 省院合作高技術(shù)產(chǎn)業(yè)化專項(xiàng)資金項(xiàng)目(2016SYHZ0026)
【分類號(hào)】：TN322.8
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本文編號(hào)：1649508