本文選題：非晶氧化物薄膜晶體管(AOS-TFTs)　切入點：非晶銦錫鋅氧化物(a-ITZO)　出處：《中北大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：基于柔性基片的薄膜晶體管(TFTs)是實現(xiàn)柔性電子器件的關(guān)鍵組成部分，由于其在開發(fā)先進光電器件方面的重大作用而成為未來不可或缺的網(wǎng)絡(luò)技術(shù)。近年來，由于非晶氧化物半導(dǎo)體(AOS)具有較寬光禁帶(3.5eV)、良好的導(dǎo)電性(103Ωcm-1)和較高的光透率(80%)等優(yōu)勢而廣泛應(yīng)用于薄膜晶體管(TFTs)中,大有替代傳統(tǒng)Si系列TFTs的趨勢，，成為下一代平板顯示器的前景材料。尤其以非晶銦錫鋅氧化物(a-ITZO)為有源層的TFTs更是吸引了人們眾多的注意力。目前，濺射是TFTs器件的主要制備方式，改變制備工藝參數(shù)可以有效改善器件的性能。 本論文就TFTs器件制備工藝的改變對器件電氣性能及穩(wěn)定性的影響展開研究，主要對影響TFTs器件性能優(yōu)化的器件結(jié)構(gòu)、有源層組成成分、源/漏電極之間接觸電阻和柵介質(zhì)材料等因素進行了詳細(xì)且系統(tǒng)地研究及分析，提出了造成器件不穩(wěn)定性的因素以及調(diào)整制備工藝條件對器件性能影響的理論依據(jù)；并以硅作為襯底，采用不同直流(DC)磁控濺射功率和Ar/O2流量比制備了基于a-ITZO有源層的TFTs器件。經(jīng)過對器件進行電氣性能及穩(wěn)定性的測試，結(jié)果表明不同濺射功率和氧氣含量主要通過改變溝道層和絕緣層接觸面之間陷阱密度(Nt)以及溝道內(nèi)載流子濃度(Nd)等因素，進而對TFTs器件的性能產(chǎn)生影響：i)采用不同濺射功率制備的器件，在80W下顯示出優(yōu)秀的電氣性能：0.16V/dec的亞閾值擺幅(S.S)、-3.60V的開啟電壓(VON)、-1.87V的閾值電壓(VTH)和高達7.77×108的電流開關(guān)比(ION/IOFF)。與此同時，在負(fù)向偏置壓力下，該器件也顯示出最強的電氣穩(wěn)定性。ii)采用不同氧含量制備的器件，在氧含量為30%時顯示出最優(yōu)質(zhì)的電氣性能：最小的S.S=0.18V/dec、最低的開啟電壓VON=-3.00V和閾值電壓VTH=-2.35V以及高達1.15×109的ION/IOFF和43.88cm2V-1s-1的μFE。通過實驗驗證了制備工藝變更對優(yōu)化a-ITZO TFTs性能的可行性，進而為今后得出合理的制備條件提供依據(jù)，以使器件獲得更優(yōu)的性能。
[Abstract]:TFTs (thin Film Transistor based on flexible substrate) is a key component of realizing flexible electronic devices. Due to its important role in the development of advanced optoelectronic devices, TFTs become an indispensable network technology in the future. The amorphous oxide semiconductor (AOS) is widely used in thin film transistors (TFTs) because of its advantages of wide optical band gap (3.5eV), good electrical conductivity (103惟 cm-1) and high optical transmittance (TFTs), and has a tendency to replace traditional Si series TFTs. TFTs with amorphous indium tin zinc oxide (ITZO) as the active layer has attracted much attention. Currently, sputtering is the main way to fabricate TFTs devices. The performance of the device can be improved by changing the process parameters. In this paper, the effects of the fabrication process of TFTs on the electrical properties and stability of TFTs devices are studied, including the components of the active layer and the structure of the devices that affect the performance optimization of TFTs devices. The contact resistance between source and leakage electrode and gate dielectric material are studied and analyzed in detail. The factors that cause the instability of the device and the theoretical basis of adjusting the preparation conditions on the performance of the device are put forward. Using silicon as substrate, TFTs devices based on a-ITZO active layer were fabricated by using different DC DC magnetron sputtering power and Ar/O2 flux ratio. The electrical properties and stability of the devices were tested. The results show that the different sputtering power and oxygen content are mainly by changing the trap density between the channel layer and the insulating layer contact surface and the carrier concentration in the channel. Furthermore, the performance of TFTs devices is affected by using different sputtering power. The device with different sputtering power shows excellent electrical performance at 80W: 0.16V / dec sub-threshold swinging voltage, the threshold voltage (VTHs) and the current switching ratio up to 7.77 脳 10 ~ 8V ~ (-1.87) V ~ (-1.87) V ~ (-1.87) V ~ (-1.87) V ~ (?) ~ (?) ~ (?) ~ (?) ~ (?) and the current / switching ratio up to 7.77 脳 10 ~ 8 ~ (8). At the same time, at the same time, Under negative bias pressure, the device also shows the strongest electrical stability. Ii) made of different oxygen content, At the oxygen content of 30, the best electrical properties were shown: the smallest S.S 0.18V / R, the lowest open voltage VON=-3.00V and threshold voltage VTH=-2.35V, and the ION/IOFF as high as 1.15 脳 10 ~ 9 and the 渭 FE of 43.88cm2V-1s-1. The feasibility of the preparation process modification to optimize the performance of a-ITZO TFTs was verified by experiments. It provides the basis for obtaining reasonable preparation conditions in the future, so that the device can obtain better performance.
【學(xué)位授予單位】：中北大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN321.5

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