本文選題：衍射極限　切入點：對準　出處：《中國科學院光電技術研究所》2017年博士論文　論文類型：學位論文

【摘要】：從集成電路的概念提出以來,光刻技術得到了長足的發(fā)展。傳統(tǒng)投影透鏡成像光刻方法在進入到納米尺度時,面臨著難以逾越的經(jīng)濟成本挑戰(zhàn)。在保證經(jīng)濟性的前提下,迫切需要發(fā)明創(chuàng)新的技術來滿足下一代集成電路的制造需求。盡管極紫外光刻與193nm的浸入式光刻系統(tǒng)通過雙重曝光可以制作22nm及更小特征尺寸的圖形,但是面臨著大規(guī)模生產(chǎn)的高成本與可靠性問題。本課題提出了一種低成本、高分辨率的表面等離子體納米成像光刻方法。表面等離子體光刻雖是一種潛在的超分辨力和低成本光刻方法,但是,仍受限于近場衍射極限(照明光波長與短工作距)。在深亞波長分辨力的接近式表面等離子體透鏡光刻實驗中,分辨力越高,光刻工作距越短。本文通過調制表面等離子體透鏡的物圖形衍射的頻譜分布,結合操控像平面處電場分量,實現(xiàn)倏逝波在成像過程中放大增強,從而突破近場衍射極限,拓展接近式表面等離子體光刻的工作距,提高成像分辨力。并基于該原理,開展了表面等離子體光刻裝置原型的相關關鍵技術研究。對準方法是集成電路制造和其它多層納米結構制作必需的關鍵技術。該原型使用周期近似的兩組光柵疊加產(chǎn)生莫爾條紋獲得了靈敏度達到10nm的對準信號。根據(jù)衍射理論,莫爾條紋獨立于照明光波長和掩模與樣片間的間隙,這使得莫爾條紋非常適合應用在表面等離子體超分辨光刻裝置中。然而,僅使用莫爾條紋信號并不能保證掩模和樣片的絕對對準,因為當掩模和樣片偏移固定位移時,莫爾條紋將重復出現(xiàn)。為了消除這種不確定狀態(tài),在樣片和掩模上的光柵對準標記旁邊,分別設計了“方框”和“十字”對準標記。該原型的自動對準方法采用了粗、精兩級對準方法。為了驗證對準方法的可行性,我們開展了平面套刻實驗,實驗結果證明,該原型通過粗精兩級對準方法,在1cm2的面積上獲得了100nm的套刻精度。該自動對準方法可以完全擴展用于4英寸或更大面積樣片的套刻對準。如果針對樣片掩模間圖形的偏差進行匹配補償、采用更高精度的運動平臺和精確的環(huán)境控制方法,表面等離子體原型可以獲得更高的套刻精度。在表面等離子體光刻原型中,采用金屬-光刻膠-金屬形式的等離子體共振腔透鏡來放大漸逝波,從而克服常規(guī)近場光刻所遇到的低保真度、低對比度和短的工作距問題。使用波長為365nm的Hg燈光源,實驗中獲得了具有高分辨率、高對比度的曝光圖像。該原型成功的實現(xiàn)了具有60nm線寬和120nm周期的光柵陣列圖案的曝光。通過該原型的步進方法,制作了5×5的光柵陣列圖案,陣列圖案的步長達到300μm,在約2×2mm2的大面積范圍內獲得了良好的圖形一致性。特別是在掩模面積遠小于曝光區(qū)域的條件下,步進曝光功能使該原型獲得了大面積圖案曝光能力。本文的研究目標是設計、制造、裝配和校準一臺先進的表面等離子體超分辨光刻裝置原型。該原型使用365nm波長的紫外光源,獲得了32nm圖形的曝光能力。此外,該原型還兼容傳統(tǒng)光刻工藝,具有高度靈活的、友好的用戶體驗,并且具有大面積圖形曝光能力和精確的多次圖形套刻能力。該原型不限于固定的掩模圖案,具備任意圖形的曝光能力,為開展高分辨、低成本、高效納米光學光刻技術提供重要方法和技術途徑,為下一代低成本的納米結構制作技術提供了一條可能的路徑。
[Abstract]:Since it was put forward from the concept of integrated circuits, lithography technology has got considerable development. The traditional projection lens imaging lithography method into the nano scale, facing the challenge of insurmountable economic cost. In the premise of ensuring economy, technology innovation urgently needed to meet the demand of integrated circuit manufacturing. Although the next generation immersion lithography system for extreme ultraviolet lithography and 193nm by double exposure can produce 22nm and smaller feature size of the graphics, but faced with high cost and reliability problems of mass production. This paper puts forward a kind of low cost, nanoplasmonic imaging method for high resolution lithography. Surface plasmon lithography is a super the resolution of the potential and low cost lithography method, however, is still limited by the near-field diffraction limit (illumination wavelength and shorter distance). In the deep sub wavelength resolution of the proximity Surface plasma lens lithography experiment, the higher the resolution, the shorter the distance lithography. The spectrum of object graphics diffraction modulation surface plasmon lens distribution, combined with the control plane like electric field component, amplify evanescent wave enhancement in the imaging process, from which break the near-field diffraction limit, expand the near surface plasma lithography working distance, improve the imaging resolution. Based on this principle, research on the key technology of surface plasmon lithography device prototype. The alignment method is made the key technology required for integrated circuit manufacturing and other multilayer structure. The two groups using the approximate periodic grating superposition prototype of Moire fringe obtained with sensitivity to alignment the signal of 10nm. According to the diffraction theory, moire fringe is independent of illumination light wavelength and the gap between the sample and the mask mode, which makes the moire fringe very Suitable for application in surface plasmon super-resolution lithography device. However, only the use of Moire fringe signal does not guarantee the absolute alignment of mask and wafer, because when the mask and the fixed sample offset displacement, moire fringe is repeated. In order to eliminate the uncertainty, in the sample and the mask grating marks next to, were designed to "square" and "cross" alignment mark. Automatic alignment method of the prototype uses a coarse, two fine alignment method. In order to verify the feasibility of the alignment method, we carried out a set of plane experiments. The experimental results show that the prototype through the two grade of coarse and fine alignment method, the accuracy of the moment 100nm in the 1cm2 area. The automatic alignment method can be fully extended to 4 inches or more area of sample alignment. If the sample moment deviation between mask graphics matching compensation recovery Control method for motion platform with higher accuracy and precision of the prototype environment, surface plasmon can obtain higher alignment precision. The surface plasmon lithography prototype, the plasmon resonance cavity lens metal photoresist metal form to amplify evanescent wave, thereby overcoming the conventional near field photolithography with low fidelity of low contrast and short working distance. The use of the wavelength of the light source of Hg 365nm, obtained with high resolution, high contrast image exposure. The prototype of the successful implementation of the grating array pattern with 60NM width and 120nm period of exposure. Through the prototype step method, production the grating array pattern 5 x 5 array pattern, step up to 300 m, the graphics good consistency in the large area of about 2 x 2mm2. Especially in the area of the mask is far less than the exposure area under the condition of step In the exposure function prototype obtained large pattern exposure. The goal of this paper is to design, manufacture, assembly and calibration of an advanced surface plasmon super-resolution lithography device prototype. The prototype using UV light of 365nm wavelength, the exposure ability of 32nm graphics. In addition, the prototype is also compatible with traditional lithography process, highly flexible, friendly user experience, and has a large area patterning ability and precise multiple graphics overlay. The prototype is not limited to the mask pattern is fixed, the exposure ability for arbitrary graphics, high resolution, low cost, high performance nano provide important methods and techniques of optical lithography technology that provides a possible path for the fabrication technology of nano structure and low cost of the next generation.

【學位授予單位】：中國科學院光電技術研究所
【學位級別】：博士
【學位授予年份】：2017
【分類號】：TN305.7

【相似文獻】

相關期刊論文 前10條

1 高榮隆;李一濱;;應用等離子體實現(xiàn)流場主動控制技術的研究[J];計算機測量與控制;2007年04期

2 王瑜;電致表面等離子體振子的色選吸收[J];現(xiàn)代顯示;1997年01期

3 夏松;楊冬曉;;雙層金屬環(huán)形陣列的太赫茲表面等離子體研究[J];激光與紅外;2014年08期

4 ;成都光電所“表面等離子體超衍射光學光刻基礎研究”通過省科技廳成果鑒定[J];紅外;2009年09期

5 楊華,唐永新,吳念樂,郭繼華,李師群;一種新的調Q方法-表面等離子體波調Q[J];量子電子學報;1999年06期

6 黃洪;趙青;焦蛟;梁高峰;黃小平;;深亞波長約束的表面等離子體納米激光器研究[J];物理學報;2013年13期

7 從恒斌;利用表面等離子體的激光共振增強傳感器的敏感特性[J];機械設計與制造;1996年02期

8 馮佳;張波;;基于釩的表面等離子體寬帶廣角紅外光吸收器[J];微納電子技術;2012年08期

9 周宏麗;王文波;;混合型表面等離子體波導中光學參量放大的研究[J];科技信息;2013年17期

10 侯曉遠,俞鳴人,王迅;InP(100)與(111)面的特征能量損失譜[J];半導體學報;1984年02期

相關會議論文 前10條

1 明海;王沛;魯擁華;;金屬復合微納結構的表面等離子體的全光調控和傳感的研究[A];2008介觀光學及其應用研討會論文集[C];2008年

2 曹爍暉;蔡偉鵬;謝堂堂;劉倩;劉曉慶;李耀群;;基于表面等離子體耦合定向熒光的生物傳感研究[A];中國化學會第27屆學術年會第09分會場摘要集[C];2010年

3 李海波;徐抒平;谷sソ，

本文編號：1645750