本文選題：脈沖輻射　切入點(diǎn)：電磁兼容　出處：《南京師范大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：靜電放電(Electrostaticdischarge)對(duì)于用電設(shè)備來(lái)說(shuō)是一種存在已久的嚴(yán)重近場(chǎng)干擾。近年來(lái)電子工業(yè)飛速發(fā),不斷朝著高速通訊、高度集成、微功耗的方向發(fā)展,這樣的結(jié)果就是集成電路內(nèi)的絕緣層壁變得越來(lái)越薄,甚至局部沒(méi)有絕緣層,同時(shí)芯片內(nèi)部的走線也變得越來(lái)越短,大大增加了敏感度。靜電放電是一個(gè)產(chǎn)生高電壓、大電流、強(qiáng)電磁場(chǎng)的過(guò)程。所產(chǎn)生的電流可以通過(guò)傳導(dǎo)直接影響設(shè)備,電磁場(chǎng)可以通過(guò)輻射影響設(shè)備,雖然直到20世紀(jì)90年代才有研究者提出ESD輻射場(chǎng)的危害,然而ESD輻射場(chǎng)的危害卻不可忽視,同樣可以對(duì)關(guān)鍵的設(shè)備系統(tǒng)的硬件軟件造成破壞,帶來(lái)不可估量的后果。本文從理論與仿真和實(shí)驗(yàn)三方面著手,①詳細(xì)介紹了靜電放電的基本理論、靜電放電電流的數(shù)學(xué)表示方法、靜電放電實(shí)際測(cè)試平臺(tái)的集總參數(shù)模型以及靜電放電脈沖電磁場(chǎng)模型,全面分析了靜電放電輻射從產(chǎn)生到耦合的每個(gè)關(guān)鍵步驟的特點(diǎn)、所包含的特征參數(shù)、以及相應(yīng)國(guó)際標(biāo)準(zhǔn)驗(yàn)證方法,為之后ESD脈沖電磁輻射空間激勵(lì)和響應(yīng)比較試驗(yàn)與脈沖電磁輻射耦合試驗(yàn)建立了理論基礎(chǔ)。②仿真方面論文中首先對(duì)有限元法基本原理進(jìn)行了較為詳細(xì)的描述介紹。然后利用以有限元法為基礎(chǔ)的HFSS軟件為基礎(chǔ),同時(shí)結(jié)合了 matlab為工具,對(duì)ESD發(fā)生器和常見(jiàn)電子器件進(jìn)行仿真建模,并且模擬了 ESD的瞬態(tài)電流和瞬態(tài)場(chǎng)。本文從理論上分析了討論了靜電放電與電子系統(tǒng)之間的輻射耦合路徑;③試驗(yàn)方面,通過(guò)嘗試使用GTEM室來(lái)代替通常直接在靜電放電抗擾度試驗(yàn)平臺(tái),這種方式利用GTEM室充當(dāng)傳輸線減小了空間中噪聲對(duì)試驗(yàn)的干擾,并且相比較之下從GTEM室芯板發(fā)射出的脈沖電磁場(chǎng)場(chǎng)強(qiáng)更加均勻,線性程度更好;接著在本文中給出了標(biāo)準(zhǔn)傳輸線模型,并按照此模型設(shè)計(jì)了電磁場(chǎng)輻照試驗(yàn),模擬了系統(tǒng)設(shè)備內(nèi)部模塊受到脈沖電磁場(chǎng)輻射照射時(shí)的耦合電壓情況,并且分析了不同條件對(duì)于耦合電壓的影響;④最后利用研究所得結(jié)論對(duì)幾種實(shí)際電子產(chǎn)品的電磁兼容問(wèn)題按照靜電放電輻射的處理方法做出了適當(dāng)處理使得電子產(chǎn)品通過(guò)了國(guó)家電磁兼容靜電放電抗擾度標(biāo)準(zhǔn)測(cè)試。
[Abstract]:Electrostatic discharge (ESD) is a serious near field interference for electric equipment. In recent years, the electronic industry has been developing rapidly, and has been developing towards high speed communication, high integration and low power consumption. The result is that the insulation layer inside the integrated circuit becomes thinner and thinner, even if there is no insulation, and the wiring inside the chip becomes shorter and shorter, which greatly increases the sensitivity. The process of a strong electromagnetic field. The resulting current can directly affect the device through conduction, and the electromagnetic field can be affected by radiation, although it was not until 1990s that some researchers suggested the harm of the ESD radiation field. However, the harm of ESD radiation field can not be ignored, and it can also destroy the hardware and software of the key equipment system. This paper introduces the basic theory of electrostatic discharge and the mathematical expression method of electrostatic discharge current from three aspects of theory, simulation and experiment. The lumped parameter model of ESD test platform and the ESD pulse electromagnetic field model are analyzed. The characteristics of each key step of ESD radiation from generation to coupling are analyzed. And the corresponding international standard verification methods, For the purpose of comparing the spatial excitation and response of ESD pulse electromagnetic radiation with the pulsed electromagnetic radiation coupling test, the theoretical foundation .2 the basic principle of finite element method is described in detail in this paper. And then using the HFSS software based on the finite element method, At the same time, with matlab as the tool, the ESD generator and common electronic devices are simulated and modeled. The transient current and transient field of ESD are simulated. In this paper, the radiation coupling path between electrostatic discharge and electronic system is discussed theoretically. In this way, the GTEM cell is used as the transmission line instead of the normal test platform for ESD immunity test, which reduces the noise interference to the test in space. Compared with the GTEM chamber core panel, the pulse electromagnetic field field intensity is more uniform and the linearity is better. Then, the standard transmission line model is given, and the electromagnetic field irradiation test is designed according to the model. The coupling voltage of the internal module of the system under the radiation of pulsed electromagnetic field is simulated. The influence of different conditions on the coupling voltage is analyzed. Finally, by using the conclusion of the study, the EMC problem of several practical electronic products is treated properly according to the method of electrostatic discharge radiation. The product has passed the national electromagnetic compatibility electrostatic discharge immunity standard test.
【學(xué)位授予單位】：南京師范大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN03;O441

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