本文選題：半導(dǎo)體　切入點(diǎn)：金屬層　出處：《華東理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：光刻工藝是半導(dǎo)體制造中最為重要的工藝步驟之一。光刻的成本約為整個(gè)硅片制造工藝的30%。國(guó)內(nèi)半導(dǎo)體生產(chǎn)廠家主要的光刻機(jī)臺(tái)為ArF、DUV和MUV三種,ArF機(jī)臺(tái)能力主要應(yīng)用在0.11um以下工藝,DUV主要應(yīng)用在0.11～0.18um工藝,MUV機(jī)臺(tái)主要是大線寬的工藝,其中MUV機(jī)臺(tái)價(jià)格相對(duì)較便宜。國(guó)內(nèi)半導(dǎo)體產(chǎn)品大都在0.05um-0.3m之間,鑒于機(jī)臺(tái)能力的限制,許多公司的DUV機(jī)臺(tái)承擔(dān)大部分產(chǎn)品的產(chǎn)能,但是DUV機(jī)臺(tái)和材料成本都高于MUV機(jī)臺(tái)。本文針對(duì)0.18um工藝金屬層,對(duì)使用MUV機(jī)臺(tái)替代DUV機(jī)臺(tái)的技術(shù)工藝優(yōu)化進(jìn)行了研究�；谙冗M(jìn)的光刻工藝技術(shù),通過對(duì)抗反射圖層、光刻膠厚度、曝光條件和顯影程序分別進(jìn)行優(yōu)化,并采用OPC修正技術(shù),提高M(jìn)UV機(jī)臺(tái)的工藝能力,使MUV機(jī)臺(tái)能生產(chǎn)部分DUV的金屬層產(chǎn)品,仿真和生產(chǎn)實(shí)踐證明了優(yōu)化工藝的可行性,該工藝的應(yīng)用能夠分擔(dān)DUV機(jī)臺(tái)負(fù)重,在不影響產(chǎn)品質(zhì)量的情況下,提高產(chǎn)能,降低生產(chǎn)成本。
[Abstract]:Lithography process is one of the most important process steps in semiconductor manufacturing. The cost of lithography is about 30% of the whole silicon wafer manufacturing process. DUV used below 0.11um is mainly used in 0.110.18um process and MUV machine is mainly used in large linewidth process. The price of MUV machine is relatively cheap. Most of the semiconductor products in China are in the range of 0.05um-0.3 m. Due to the limitation of the machine's capacity, many companies' DUV machines bear the capacity of most of the products. However, the cost of DUV machine and material is higher than that of MUV machine. In this paper, the technology optimization of replacing DUV machine with MUV machine is studied for 0.18um process metal layer. The thickness of photoresist, the exposure condition and the development program were optimized respectively, and the OPC correction technology was adopted to improve the technological ability of the MUV machine, so that the MUV machine could produce part of the metal layer products of DUV. The simulation and production practice prove the feasibility of optimizing the process. The application of this process can share the load of DUV machine, improve the production capacity and reduce the production cost without affecting the product quality.
【學(xué)位授予單位】：華東理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN305.7

【參考文獻(xiàn)】

相關(guān)期刊論文 前2條

1 郭立萍,黃惠杰,王向朝;光學(xué)光刻中的離軸照明技術(shù)[J];激光雜志;2005年01期

2 肖嘯,杜驚雷,郭永康,楊靜,謝世偉;減小光刻中駐波效應(yīng)的新方法研究[J];微細(xì)加工技術(shù);2002年04期

，

本文編號(hào)：1621524