本文選題：高溫超導(dǎo)接收機(jī)　切入點(diǎn)：低溫低噪聲放大器　出處：《杭州電子科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：近年來(lái)隨著無(wú)線通信技術(shù)的快速發(fā)展,對(duì)通信接收系統(tǒng)的性能提出了更高的要求。高溫超導(dǎo)接收機(jī)以其高靈敏度、高選擇性成為當(dāng)下研究的熱點(diǎn)。在民用方面它可以有效擴(kuò)大通信基站的覆蓋能力和通信容量,增加抗干擾能力。在軍用方面,性能優(yōu)異的高溫超導(dǎo)接收機(jī)具有極強(qiáng)的弱信號(hào)提取能力,可以改善接收系統(tǒng)的偵查接收能力。低溫低噪聲放大器作為高溫超導(dǎo)接收前端的第一級(jí)有源器件,其噪聲系數(shù)指標(biāo)對(duì)接收機(jī)的靈敏度具有至關(guān)重要的影響。因此對(duì)于具有極低噪聲系數(shù)的低溫低噪聲放大器的研究具有重要的現(xiàn)實(shí)意義。本文首先介紹了低噪聲放大器(LNA)的發(fā)展歷史與現(xiàn)狀,繼而詳細(xì)的闡述了低噪聲放大器的工作原理以及設(shè)計(jì)方法。隨后利用高電子遷移率晶體管(p HEMT)設(shè)計(jì)實(shí)現(xiàn)了兩款應(yīng)用于高溫超導(dǎo)接收前端的低溫低噪聲放大器,并給出了測(cè)試結(jié)果和性能分析。本文選用的低噪聲放大器為安捷倫公司的p HETM管ATF-54143,首先利用射頻仿真軟件ADS對(duì)放大器的偏置電路、穩(wěn)定性、輸入輸出匹配電路進(jìn)行仿真設(shè)計(jì)。然后引入源級(jí)串聯(lián)負(fù)反饋和并聯(lián)阻性反饋結(jié)構(gòu),使得放大器在很寬的頻帶內(nèi)穩(wěn)定工作且具有良好的駐波與噪聲性能。最后對(duì)仿真設(shè)計(jì)完成的電路進(jìn)行制作加工。最后在液氮的溫度下進(jìn)行性能測(cè)試。測(cè)試結(jié)果表明所設(shè)計(jì)的兩款LNA的性能指標(biāo)滿足了課題的要求。
[Abstract]:In recent years, with the rapid development of wireless communication technology, the performance of the communication receiving system has been put forward higher requirements. High selectivity has become the focus of current research. In the civilian aspect, it can effectively expand the coverage and communication capacity of the communication base station, increase the anti-jamming capability. The high temperature superconducting receiver with excellent performance has very strong weak signal extraction ability, which can improve the detection and reception ability of the receiving system. Low temperature low noise amplifier is the first stage active device of the high temperature superconducting receiving front end. The index of noise coefficient has a vital influence on the sensitivity of receiver. Therefore, it is of great practical significance to study the low temperature low noise amplifier with very low noise coefficient. This paper first introduces the low noise amplifier. The history and present situation of LNAs. Then, the working principle and design method of LNA are described in detail. Then, two low-temperature LNA used in HTS receiver front end are designed and implemented by using high electron mobility transistor pHEMT. The test results and performance analysis are also given. The low noise amplifier selected in this paper is the ATF-54143 of Agilent's p HETM transistor. Firstly, the bias circuit of the amplifier is stabilized by the radio frequency simulation software ADS. The input and output matching circuit is simulated and designed. Then the source level series negative feedback and the parallel resistive feedback structure are introduced. The amplifier works stably in a wide frequency band and has good standing wave and noise performance. Finally, the circuit designed by simulation is manufactured. Finally, the performance is tested at the temperature of liquid nitrogen. Ming designed two LNA performance indicators to meet the requirements of the subject.
【學(xué)位授予單位】：杭州電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.3

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相關(guān)碩士學(xué)位論文 前1條

1 鄧輝;L波段寬帶低噪聲小信號(hào)放大器的研制[D];電子科技大學(xué);2007年

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本文編號(hào)：1613738