本文選題：H-SiC　切入點：Al離子注入　出處：《微納電子技術(shù)》2017年04期 　論文類型：期刊論文

【摘要】：在4H-SiC中進行Al離子注入,并進行了二次高溫退火技術(shù)研究。樣品中Al離子的注入濃度為3×10~(19)cm~(-3),對樣品進行首次高溫退火工藝后,在不同條件下對樣品進行二次退火。退火后對樣品進行霍爾測試和二次離子質(zhì)譜(SIMS)測試。測試結(jié)果顯示,二次退火工藝有助于進一步提升Al離子在碳化硅中的有效電激活率。在1 850℃下進行3 min首次退火后,1#樣品的有效空穴濃度只有3.23×10~(17)cm~(-3)。在1 850℃下進行3 min的二次退火后,2#樣品的有效空穴濃度增大到了6.4×10~(18)cm~(-3)。同時二次退火導致了Al離子總劑量的降低,二次退火時間越長,溫度越高,Al離子總劑量降低越顯著。
[Abstract]:Al ion implantation was carried out in 4H-SiC and secondary high temperature annealing was carried out. The Al ion implantation concentration in the sample was 3 脳 10 ~ (10) C ~ (19) cm ~ (-1) ~ (-1). The samples were annealed twice under different conditions. After annealing, the samples were tested by Hall test and secondary ion mass spectrometry (SIMS). The results showed that, The secondary annealing process is helpful to further increase the effective electrical activation rate of Al ions in silicon carbide. After 3 min initial annealing at 1 850 鈩，

本文編號：1606812