本文選題：嵌入式閃存　切入點：金屬互連　出處：《半導(dǎo)體技術(shù)》2017年02期 　論文類型：期刊論文

【摘要】：研究了一種0.13μm嵌入式閃存產(chǎn)品量產(chǎn)中常見的由于后段主要金屬層互連短路引起的閃存電路讀取數(shù)值失效的案例。通過采用電學(xué)失效分析和物理失效分析,成功觀察到了含Cu成分較高的θ相(Al2Cu)在阻擋層TiN與Al-Cu金屬薄膜界面處析出,導(dǎo)致Ti N刻蝕被阻止。由于Al-Cu物理氣相沉積(PVD)時作業(yè)腔內(nèi)的硅片表面溫度接近350℃,推測θ相(Al_2Cu)的形成是硅片表面溫度偏低所導(dǎo)致的�；谏鲜黾僭O(shè)提出一個優(yōu)化的Al-Cu物理氣相沉積工藝方案,通過提高作業(yè)腔中硅片表面溫度避免θ相生成。實驗結(jié)果表明,新的工藝方案可以有效避免θ相(Al_2Cu)形成,并能解決金屬互連短路的問題。
[Abstract]:In this paper, a case of reading numerical failure of flash memory circuit caused by interconnect short circuit of main metal layer in 0.13 渭 m embedded flash memory product mass production is studied. Through the use of electrical failure analysis and physical failure analysis, The precipitation of 胃 phase Al _ 2Cu with high Cu content at the interface between the barrier layer TiN and the Al-Cu metal film has been successfully observed, which leads to the prevention of TiN etching. The surface temperature of the silicon wafer in the working cavity is close to 350 鈩，

本文編號：1603052