本文選題：TFT　切入點(diǎn)：SSD　出處：《山東大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：近十幾年來(lái),薄膜晶體管(Thin Film Transistor, TFT)已經(jīng)成為當(dāng)前的研究熱點(diǎn),并且得到了廣泛的應(yīng)用,它將有望成為下一代顯示器的驅(qū)動(dòng)元件；平面自開關(guān)二極管自提出以來(lái),由于它的制備工藝簡(jiǎn)單以及平面特性,得到了廣泛的研究。本論文的研究?jī)?nèi)容主要包括兩個(gè)部分,即以PMMA(polymethyl methacrylate)為絕緣層制備高性能的非晶IGZO TFT和制備非晶IGZO SSD (self-switching diode)。(1)以PMMA(polymethyl methacrylate)為絕緣層制備高性能的非晶IGZO TFT我們先以Si02為絕緣層制備優(yōu)良的a-IGZO TFT,找到相對(duì)合適的a-IGZO濺射功率,濺射氣體,成膜厚度,退火條件以及源漏電極材料。然后我們基于以上條件,制備以PMMA(polymethyl methacrylate)為絕緣層的高性能非晶IGZO TFT,在這期間我們研究了PMMA的退火溫度對(duì)器件性能的影響,退火溫度分別為120℃,130℃,140℃,150℃,我們發(fā)現(xiàn)退火溫度過低,器件的漏電流較大,器件的成品率越低,在150℃的退火條件下,器件最穩(wěn)定,漏電流最小,成品率最高；我們還研究了IGZO界面處理對(duì)器件的性能影響,我們分別對(duì)IGZO界面作了如下處理：150℃烘烤20分鐘,UV ozone處理20分鐘,UV ozone 20分鐘后接著150℃烘烤20分鐘,以及對(duì)界面不作任何處理,我們發(fā)現(xiàn)對(duì)IGZO的界面作以上處理,影響并不大；我們還對(duì)PMMA絕緣層作了如下處理：UV-ozone處理20分鐘,UV-ozone處理20分鐘后接著150℃烘烤20分鐘,紫外曝光10分鐘,發(fā)現(xiàn)不作處理的器件性能最好。然后,我們研究了用不同設(shè)備制備柵電極對(duì)器件的影響,比如Ti, Al,發(fā)現(xiàn)用熱蒸發(fā)制備的Al電極最好。(2)制備非晶IGZO SSD (self-switching diode)我們用濺射制備了30nm的非晶IGZO薄膜,然后在上面制備了SSD圖形,我們研究了濕法刻蝕和干法刻蝕對(duì)刻蝕IGZO SSD形貌的影響,濕法刻蝕我們分別用稀鹽酸和稀醋酸刻蝕非晶IGZO,干法刻蝕我們用CH4和H2作為刻蝕氣體,對(duì)IGZO進(jìn)行千法刻蝕。然后我們研究了用不同電極作為歐姆接觸電極對(duì)器件性能的影響,分別為Ti,以及Ti/Au。
[Abstract]:In recent years, thin Film transistors (TFTs) have become a hot research topic and have been widely used in the next generation of displays. Because of its simple preparation process and plane characteristics, it has been widely studied. The research contents of this thesis mainly include two parts. That is to say, high performance amorphous IGZO TFT and amorphous IGZO SSD self-switching are prepared by using PMMA(polymethyl methacrylate as insulating layer and IGZO SSD self-switching. 1) High performance amorphous IGZO TFT is prepared by using PMMA(polymethyl methacrylatein as insulating layer. First, we use Si02 as insulator to prepare excellent a-IGZO TFTs, and find a relatively suitable a-IGZO sputtering power. Sputtering gas, film thickness, annealing conditions and source and drain electrode materials. Based on the above conditions, we prepared high performance amorphous IGZO TFTs with PMMA(polymethyl methacrylate as insulating layer. In the meantime, we studied the effect of annealing temperature of PMMA on the properties of the devices. The annealing temperature is 120 鈩，

本文編號(hào)：1600705