本文選題：全固態(tài)激光器　切入點(diǎn)：可飽和吸收體　出處：《山東大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：激光二極管泵浦的全固態(tài)激光器不僅體積小、結(jié)構(gòu)緊湊、設(shè)備簡單、價(jià)格低廉,而且輸出光束質(zhì)量高、效率高、性能穩(wěn)定,因此被廣泛應(yīng)用到軍工業(yè)以及科研等領(lǐng)域。在全固態(tài)激光器諧振腔內(nèi)插入可飽和吸收元件元件,例如Nd:YAG,GaAs以及其他具有可飽和吸收特性的半導(dǎo)體材料,即可實(shí)現(xiàn)調(diào)Q與鎖模效果�？娠柡臀阵w作為調(diào)Q以及鎖模元件具有結(jié)構(gòu)緊湊,價(jià)格低,簡單易操作等優(yōu)點(diǎn),這使得可飽和吸收體自誕生以來一直備受關(guān)注。近年來砷化鎵可飽和吸收體由于其光學(xué)非線性而被成功應(yīng)用到了多種增益介質(zhì)的全固態(tài)激光器當(dāng)中。其在1064nm波長處的可飽和吸收普遍認(rèn)為是由于GaAs中的EL2深能級缺陷造成的,而GaAs的雙光子吸收與自由載流子吸收在脈沖形成過程中也起到了重要作用。在本文中,為了提高砷化鎵的可飽和吸收特性,我們采用了合金的方式,在GaAs當(dāng)中摻入Bi元素,并對摻Bi砷化鎵作為可飽和吸收體的全固態(tài)Nd:GGG激光器進(jìn)行了關(guān)于其輸出特性的實(shí)驗(yàn)研究。論文主要的研究工作如下：在第一章中,簡要介紹全固態(tài)激光器,調(diào)Q技術(shù),鎖模技術(shù),以及調(diào)Q鎖模技術(shù)的發(fā)展情況,并對調(diào)Q、鎖模技術(shù)原理進(jìn)行了簡單介紹。在第二章中,對GaAs可飽和吸收體在1064nm波段的調(diào)Q、鎖模原理進(jìn)行討論�？偨Y(jié)了制取摻Bi砷化鎵的三種主要方式,本文采用離子注入方式制取摻Bi砷化鎵,并對制取的樣品的可飽和吸收特性進(jìn)行簡要分析。在第三章中,對使用摻鉍GaAs作為可飽和吸收體調(diào)Q的Nd:GGG全固態(tài)激光器進(jìn)行了關(guān)于激光輸出特性的研究,并與未摻雜的砷化鎵調(diào)Q的Nd:GGG全固態(tài)激光器進(jìn)行對比。使用摻Bi砷化鎵調(diào)Q的激光器的平均輸出功率更高,峰值功率更大,半峰寬度更窄,這些實(shí)驗(yàn)結(jié)果表明摻Bi后GaAs可飽和吸收效果更優(yōu)。在第四章中,對使用摻Bi砷化鎵調(diào)Q鎖模Nd:GGG全固態(tài)激光器輸出特性進(jìn)行實(shí)驗(yàn)研究,通過研究實(shí)驗(yàn)所得結(jié)果可以發(fā)現(xiàn),激光器輸出的調(diào)Q包絡(luò)穩(wěn)定,并且調(diào)制深度幾乎可以達(dá)到百分之百。因此,我們相信,摻Bi砷化鎵是一種性能良好的可飽和吸收體。在第五章中,對全文內(nèi)容進(jìn)行了總結(jié),結(jié)合以后成果指出了下一步將要進(jìn)行的工作。
[Abstract]:The all-solid-state laser pumped by laser diode is not only small in size, compact in structure, simple in equipment and low in price, but also has high output beam quality, high efficiency and stable performance. Therefore, it has been widely used in military industry and scientific research, where saturable absorber elements such as ND: Yago GaAs and other semiconductor materials with saturable absorptivity are inserted into resonators of all-solid-state lasers. The effect of Q-switching and mode-locking can be realized. The saturable absorber has the advantages of compact structure, low price, simple and easy to operate as Q-switched and mode-locking element. In recent years, gallium arsenide saturable absorbers have been successfully used in all-solid-state lasers with various gain media due to their optical nonlinearity. The saturable absorption is generally considered to be due to the deep level defect of EL2 in GaAs. The two-photon absorption and free carrier absorption of GaAs also play an important role in the pulse formation. In this paper, in order to improve the saturable absorption characteristics of gallium arsenide, we have adopted the alloy method of doping Bi elements into GaAs. The output characteristics of all-solid-state Nd:GGG lasers doped with Bi GaAs as saturable absorbers are studied experimentally. The main work of this paper is as follows: in Chapter 1, all-solid-state lasers and Q-switched techniques are briefly introduced. The development of mode-locking technology and Q-switched mode-locking technology is briefly introduced. In chapter two, the principle of Q-switched and mode-locking technology is briefly introduced. The principle of Q-switching and mode-locking of GaAs saturable absorber at 1064nm is discussed. Three main ways of preparing Bi-doped gallium arsenide are summarized. In this paper, Bi-doped gallium arsenide is prepared by ion implantation. In chapter 3, the laser output characteristics of Nd:GGG all-solid-state laser with bismuth doped GaAs as saturable absorber Q-switched are studied. The average output power is higher, the peak power is higher, the width of half peak is narrower, and the average output power is higher, the peak power is larger and the width of half peak is narrower than that of non-doped GaAs Q-switched Nd:GGG all-solid-state laser. These experimental results show that Bi-doped GaAs has better saturable absorption. In Chapter 4th, the output characteristics of Bi-doped gallium arsenide Q-switched mode-locked Nd:GGG all-solid-state laser are experimentally studied. The Q-switched envelope of the laser is stable, and the modulation depth can reach almost 100%. Therefore, we believe that Bi-doped gallium arsenide is a good saturable absorber. In Chapter 5th, the content of this paper is summarized. Combined with the later results, the future work will be pointed out.
【學(xué)位授予單位】：山東大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN248

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本文編號：1595779