本文選題：TBPe　切入點(diǎn)：MEH-PPV　出處：《北京交通大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：藍(lán)色發(fā)光材料TBPe是一種高效的熒光小分子摻雜染料,發(fā)現(xiàn)其與MEH-PPV共摻雜可以提高器件的發(fā)光性能,制作出多層結(jié)構(gòu)器件,能有效減小電極猝滅,并且能提高電致發(fā)光器件的性能。TBPe同其他紅光、綠光材料合理搭配,設(shè)計(jì)實(shí)驗(yàn),制備結(jié)構(gòu)簡單化的白色有機(jī)電致發(fā)光器件。 本文采用摻入不同比例TBPe(2,5,8,11-tetratertbutylperylene)的MEH-PPV(po ly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene])作為發(fā)光層,制備ITO/PE DOT:PSS/MEH-PPV/TBPe/Al有機(jī)電致發(fā)光器件,發(fā)現(xiàn)TBPe的最優(yōu)蒸鍍厚度為0.5nm,相對于未蒸鍍的標(biāo)準(zhǔn)器件發(fā)光強(qiáng)度提高了325%；制備ITO/PEDOT:PSS/MEH-PPV:TBPe/TBPe/Liq/Al有機(jī)電致發(fā)光器件,研究不同摻雜比例對器件性能的影響,發(fā)現(xiàn)最優(yōu)摻雜比例為30%,相比未摻雜比例TBPe的器件,發(fā)光亮度提高44%,發(fā)光光譜波峰均位于580nm處。此外,采用Alq3提高電子注入,制作Liq和LiF修飾的ITO/PEDOT:PSS/MEH-PPV:TBPe/TBPe/Alq3/Liq/Al, ITO/PEDOT:PSS/MEH-P PViTBPe/TBPe/Alqs/LiF/Al多層器件,發(fā)光亮度達(dá)到4162.2cd/m2和4701cd/m2。 本工作還制作了兩種不同結(jié)構(gòu)的器件,實(shí)現(xiàn)了OLED器件發(fā)白光。第一種方法采用TBPe與Rubrene共混蒸鍍制作白光OLED器件,實(shí)現(xiàn)了OLED器件發(fā)白光的目的,根據(jù)能級理論,設(shè)計(jì)實(shí)驗(yàn)器件結(jié)構(gòu)如下所示：ITO/NPB(50nm)/TBPe:Rubrene (40nm, Rwt=1%)/Alq3(40nm)/LiF(0.5nm)/Al(100nm)。器件在4V啟亮,在9V時(shí)發(fā)光亮度達(dá)到最大值2234cd/m2,色坐標(biāo)位于(0.3317,0.3401)處,發(fā)光光譜為三波段,色坐標(biāo)在白色區(qū)域中心。第二種方法采用TBPe旋涂法制作白光OLED器件,也實(shí)現(xiàn)了白光OLED器件,器件結(jié)構(gòu)如下所示：ITO/PVK:TBPe (wt%=95:5,10mg/ml)/Alq3:Rubrene (40nm, Rwt%=1%)/LiF(0.5nm)/Al(100nm)。此方法制作的器件,在4V啟亮,在12.2V時(shí)發(fā)光亮度達(dá)到最大值5185cd/m2,色坐標(biāo)位于(0.3411,0.3874),發(fā)光光譜為雙波段,隨著電壓升高,亮度增強(qiáng),發(fā)光在白色中心偏上的區(qū)域,器件發(fā)光發(fā)的是白光。
[Abstract]:Blue luminescent material (TBPe) is a kind of highly efficient fluorescent small molecule doped dye. It is found that co-doping with MEH-PPV can improve the luminescence performance of the device and fabricate the multilayer structure device, which can effectively reduce the quenching of the electrode. It can improve the performance of electroluminescent devices. TBPe can be reasonably matched with other red and green materials, and the white organic electroluminescent devices with simple structure can be fabricated by designing experiments. In this paper, ITO/PE DOT:PSS/MEH-PPV/TBPe/Al organic electroluminescent devices were fabricated by using MEH-PPV(po ly [2-methoxy-5-ethylhexyloxyne-1-ethylhexyloxyne-1-phenylenevinylene] doped with different ratios of TBPe-2Pe ~ (2 +) (11-tetratertbutylperyleneene) as a luminescent layer. It was found that the optimal thickness of TBPe was 0.5 nm, which increased the luminescence intensity of ITO/PEDOT:PSS/MEH-PPV:TBPe/TBPe/Liq/Al organic electroluminescent device by 325 nm compared with the standard device without evaporation plating, and the effect of doping ratio on the performance of the device was studied. It was found that the optimum doping ratio was 30, and the luminescence brightness of the device with no doping ratio TBPe was increased by 44%, and the peak of luminescence spectrum was at 580 nm. In addition, Alq3 was used to increase electron injection, and the Liq / LiF modified ITO / PEDOT: PSS / PPV / Alq3 / TBP / TB / TB / TB / Al / LiqP / Al, ITO/PEDOT:PSS/MEH-P PViTBPe/TBPe/Alqs/LiF/Al multilayer device was fabricated. Luminous brightness is 4162.2 cm / m ~ 2 and 4701 CD / m ~ 2. In this work, two kinds of devices with different structures have been fabricated, and the white light of OLED device has been realized. In the first method, the white light of OLED device has been realized by using TBPe and Rubrene mixed evaporation plating, and according to the energy level theory, the white light of OLED device has been realized. The structure of the experimental device is as follows: 1 ITO / NPB / 50 nm-1 / TBP: Rubrene 40nm, RW 1 / Alq340nmN / LiF0.5nmmnm1.The device is bright at 4V, with a maximum luminance of 2234cdpm2at 9V, the chromatic coordinate is 0.3317cdr 0.3401), and the luminescence spectrum is three bands. The device is light up at 4V, and its luminance reaches a maximum of 2234cdpm2at 9V, and the chromatic coordinate is at 0.3317NM 0.3401), and the luminescence spectrum is three bands. The color coordinates are in the center of the white area. The second method is to fabricate the white light OLED device by TBPe spin coating method, and also to realize the white light OLED device. The structure of the device is as follows: ITO / PVK: TBPe: TBPe. At 12.2V, the luminance reaches the maximum value of 5185cd / m2, and the color coordinate is located at 0.3411U 0.3874. The luminescence spectrum is two-band. With the increase of voltage, the luminance increases, and the luminescence is in the region above the white center, and the white light is emitted by the device.
【學(xué)位授予單位】：北京交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN383.1

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