本文選題：低壓基準(zhǔn)電壓源　切入點(diǎn)：CMOS　出處：《微電子學(xué)》2017年02期 　論文類(lèi)型：期刊論文

【摘要】：基于低壓技術(shù),利用亞閾值區(qū)MOS管代替寄生BJT管,設(shè)計(jì)了一種工作在低電源電壓下的基準(zhǔn)電壓源,并對(duì)基準(zhǔn)電壓進(jìn)行了溫度補(bǔ)償。采用TSMC 0.18μm CMOS工藝對(duì)電路進(jìn)行了設(shè)計(jì)和仿真。仿真結(jié)果顯示:電路正常工作的最低電源電壓為0.6V,當(dāng)電源在0.6~2.0V范圍內(nèi)變化,基準(zhǔn)輸出電壓僅變化了1.75mV;在0.6V電源電壓下,-20℃~125℃溫度范圍內(nèi),溫度系數(shù)為2.8×10~(-5)/℃,電源抑制比為52.47dB@10kHz,整個(gè)電路的功耗僅為12μW。
[Abstract]:Based on low-voltage technology, a reference voltage source working at low power supply voltage is designed by using sub-threshold MOS instead of parasitic BJT. The circuit is designed and simulated by using TSMC 0.18 渭 m CMOS process. The simulation results show that the minimum supply voltage of the circuit is 0.6V, and when the power supply is in the range of 0.62V, the circuit is simulated. The reference output voltage changes only 1.75 MV, the temperature coefficient is 2.8 脳 10 ~ (-1) ~ (-5) / 鈩，

本文編號(hào)：1586948