本文選題：有機薄膜晶體管　切入點：PVP　出處：《江南大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：絕緣層作為OTFTs的重要組成部分,其性能好壞直接影響著OTFTs的性能,因此,要想獲得性能優(yōu)良的OTFTs器件,好的絕緣層顯得至關(guān)重要。本論文選用PVP作為絕緣材料,其介電常數(shù)較高、絕緣性能好,而且由于溶于有機溶劑,所以適合溶液法制備。通過將其制備成PVP薄膜以及MIS結(jié)構(gòu)器件,并借助橢圓偏振光譜儀、半導(dǎo)體參數(shù)分析儀和阻抗分析儀對其光學(xué)性能和電學(xué)性能進行測試,探討了溶劑蒸汽輔助旋涂和輔助退火對PVP絕緣膜性能的影響。具體研究內(nèi)容主要包括下列幾個方面:(1)通過改變勻膠機旋轉(zhuǎn)速率以及旋涂時是否放置PGMEA,研究了旋涂速度和PGMEA蒸汽輔助旋涂對PVP膜的影響。發(fā)現(xiàn)增大勻膠速率或利用PGMEA進行溶劑蒸汽輔助旋涂均能使PVP膜變薄;而且相同厚度條件下,用PGMEA蒸汽輔助旋涂得到的PVP膜做成的MIS結(jié)構(gòu),其單位面積漏電流密度J比未經(jīng)蒸汽輔助旋涂的要小。表明PGMEA溶劑蒸汽輔助旋涂能有效降低PVP膜厚度,并且提高PVP膜電學(xué)性能。(2)利用苯甲醚蒸汽對PGMEA蒸汽輔助旋涂獲得的PVP膜進行輔助退火,通過改變蒸汽輔助退火時間研究了它對PVP膜的影響。經(jīng)橢偏光譜測試和擬合分析,得到隨著苯甲醚蒸汽輔助退火時間的增加,PVP膜的總厚度下降,粗糙層厚度先降低后增大,在10min時達到最低值;由這種膜構(gòu)成的MIS結(jié)構(gòu)的J-V特性測試結(jié)果顯示,當電場強度取值為2MV/cm時,J由0min時的1.07×10-6 A/cm2降至10min時的6.85×10-8 A/cm2,再增至20min時的2.99×10-7 A/cm2。表明PVP膜經(jīng)適當時間的溶劑蒸汽輔助退火后,能有效降低其表面粗糙度和陷阱密度,從而提高PVP膜性能。(3)通過改變苯甲醚蒸汽的相對蒸汽壓,研究了溶劑相對蒸汽壓對溶劑蒸汽輔助退火制備PVP膜的影響。經(jīng)橢偏光譜測試和擬合分析,得到隨著相對蒸汽壓的增大,PVP膜總厚度(均小于30nm)和粗糙層厚度均降低,薄膜致密性得到改善。由這種膜構(gòu)成的MIS結(jié)構(gòu)的J-V特性測試結(jié)果顯示,當蒸汽壓由0.21增加至0.82時,2MV/cm時J由2.94×10-7 A/cm2降至4.2×10-8 A/cm2,其漏電機理在電場強度小于1MV/cm時為P-F效應(yīng),大于1MV/cm時為肖特基發(fā)射。而且在相對蒸汽壓為0.82時可得到薄膜厚度僅約為20nm、單位面積電容達到145 n F/cm2的超薄PVP膜。
[Abstract]:As an important part of OTFTs, the performance of insulating layer directly affects the performance of OTFTs. Therefore, it is very important to obtain a good insulating layer in order to obtain a good OTFTs device. In this paper, PVP is chosen as the insulating material. Its dielectric constant is high, its insulation property is good, and because it is soluble in organic solvent, it is suitable to be prepared by solution method. By preparing it into PVP thin film and MIS structure device, and with the help of elliptical polarization spectrometer, The optical and electrical properties were tested by semiconductor parameter analyzer and impedance analyzer. The effects of solvent vapor assisted spin-coating and auxiliary annealing on the properties of PVP insulation film were discussed. The specific research contents include the following aspects: 1) the spin-coating was studied by changing the rotation rate of the rubber leveller and whether or not to place PGMEA at the time of spin-coating. The effect of speed and PGMEA steam assisted spin coating on the PVP film was found. It was found that the PVP film could be thinned by increasing the uniform adhesive rate or using PGMEA as solvent vapor assisted spin coating. Moreover, under the same thickness, the leakage current density J per unit area of the PVP film prepared by PGMEA steam assisted spin coating is smaller than that of the MIS film without steam assisted spin coating. It shows that the PGMEA solvent vapor assisted spin coating can effectively reduce the thickness of PVP film. The electrical properties of PVP films were improved. (2) the PVP films obtained by vapor assisted spin-coating of PGMEA were annealed by phenylene ether vapor. The influence of PVP films on PVP films was studied by changing the time of vapor assisted annealing. The results of ellipsometry spectrum test and fitting analysis were used. The results show that with the increase of the vapor assisted annealing time, the total thickness of the PVP film decreases, the thickness of the rough layer decreases first and then increases, and reaches the lowest value at 10 minutes, and the J-V characteristics of the MIS structure formed by the film are measured. When the electric field intensity is 2 MV / cm, the surface roughness and trap density of PVP film can be reduced effectively by solvent vapor assisted annealing at 20 min, from 1.07 脳 10 -6 A / cm 2 at 0 min to 6.85 脳 10 ~ (-8) A / cm ~ (2) at 10 min, and then to 2.99 脳 10 ~ (-7) A / cm ~ (2) at 20 min. By changing the relative vapor pressure of phenylene ether vapor, the effect of relative solvent vapor pressure on the preparation of PVP film by solvent vapor assisted annealing was studied. With the increase of relative vapor pressure, the total thickness (less than 30 nm) and the thickness of rough layer of PVP film are all decreased, and the densification of the film is improved. The J-V characteristics of the MIS structure formed by this kind of film are measured. When the vapor pressure increases from 0.21 to 0.82, J decreases from 2.94 脳 10 ~ (-7) A / cm ~ (-2) to 4.2 脳 10 ~ (-8) A / cm ~ (2). The leakage mechanism is P-F effect when the electric field intensity is less than 1 MV / cm ~ (-1). Schottky emission is observed when the thickness of the film is greater than 1 MV / cm and the thin PVP film with a thickness of only 20 nm and a capacitance of 145n F / cm 2 can be obtained at the relative vapor pressure of 0.82.
【學(xué)位授予單位】：江南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN321.5

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本文編號：1584674