本文選題：微波半導(dǎo)體　切入點(diǎn)：AlGaN/AlN/GaN　出處：《山東大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：近年來,由于微波技術(shù)的不斷發(fā)展,微波半導(dǎo)體器件已經(jīng)在無線通信、遙測系統(tǒng)、導(dǎo)航以及軍事領(lǐng)域取得了廣泛的應(yīng)用。GaN作為第三代半導(dǎo)體材料的代表,因其具有寬的禁帶寬度、高的擊穿電場、高的熱導(dǎo)率、高的電子飽和漂移速度、高的熱導(dǎo)率及高的抗輻射能力,所以在射頻、微波和毫米波等高頻以及大功率器件領(lǐng)域中得到廣泛應(yīng)用。目前對GaN基電子器件和電路雖然已經(jīng)進(jìn)入了應(yīng)用階段,但是電路設(shè)計(jì)中GaN基HMETs器件模型多沿用GaAs的模型,如Angelov模型、TriQuint模型等。因此建立精確的GaN HMETs等效電路模型對于電路設(shè)計(jì)、器件性能提升,特別是對器件的大信號(hào)建模有著十分重要的指導(dǎo)意義。本文正是以這些問題為出發(fā)點(diǎn),在以下方面進(jìn)行了具體的研究：1、研究了一種新的方法對AlGaN/AlN/GaN異質(zhì)結(jié)場效應(yīng)晶體管小信號(hào)等效電路進(jìn)行參數(shù)提取。根據(jù)制得的器件的特性,采用了16元件模型。對于寄生電感和寄生電容的提取采取了射頻去嵌入技術(shù)。而對于小信號(hào)參數(shù)模型中最為重要且最難提取的寄生電阻部分,利用公式推導(dǎo)出Re(Z12)與Rs的關(guān)系,通過迭代計(jì)算求解Rs,在得到Rs后可計(jì)算出Rd,避免了以往寄生電阻不隨器件偏置點(diǎn)變化而變化的弊端,且經(jīng)過對比傳統(tǒng)方法,新方法的擬合效果更令人滿意。2、研究了AlGaN/AlN/GaN異質(zhì)結(jié)場效應(yīng)晶體管截止頻率fT與器件尺寸的關(guān)系,進(jìn)而分析了影響fT的主要參數(shù)是gm與柵電容。又研究了器件本征參數(shù)變化規(guī)律,發(fā)現(xiàn)本征跨導(dǎo)gm隨頻率的升高呈現(xiàn)下降的趨勢,其原因可歸結(jié)于低頻時(shí)柵源、柵漏之間的表面漏電流區(qū)也被調(diào)制,這樣會(huì)增大跨導(dǎo),當(dāng)頻率升高時(shí),表面陷阱態(tài)中的電子來不及響應(yīng)外加信號(hào)的變化,使得跨導(dǎo)降低。3、研究了AlGaN/AlN/GaN異質(zhì)結(jié)場效應(yīng)晶體管電流崩塌效應(yīng),通過對器件進(jìn)行柵極電壓脈沖測試對比直流的測試結(jié)果,發(fā)現(xiàn)很明顯的電流崩塌效應(yīng),同時(shí)發(fā)現(xiàn)對于不同的柵極脈沖寬度,脈沖寬度越小,器件電流崩塌程度越明顯,由于測試器件未做鈍化,結(jié)合“虛柵”模型分析了電流崩塌效應(yīng)與器件表面態(tài)間的關(guān)系。
[Abstract]:In recent years, due to the rapid development of microwave technology, microwave semiconductor devices have been in a wireless communication system, remote sensing, navigation and military fields has been widely used.GaN as a representative of the third generation of semiconductor materials, because of its wide band gap, high breakdown field, high thermal conductivity, high saturated electron drift velocity. High thermal conductivity and high resistance to radiation, so widely used in RF, microwave and millimeter wave high frequency and high power devices in the field. The GaN based electronic devices and circuits have been entered into the application stage, but the circuit design of GaN based HMETs model using GaAs model, Angelov model TriQuint, model and so on. So the establishment of GaN HMETs equivalent circuit model for accurate circuit design, device performance, especially it is very important to large signal modeling of the device. This paper is based on these issues as a starting point, the specific research in the following aspects: 1, research on a new method for parameter extraction of junction field effect transistor small signal equivalent circuit of AlGaN/AlN/GaN. According to the characteristics of heterogeneous devices prepared, using the 16 element model. For the extraction of parasitic inductance and parasitic capacitance take the RF de embedding technique. For small signal parameters in the model is the most important and the most difficult part of the parasitic resistance extraction, using the formula Re (Z12) and Rs, through iterative calculation for Rs, in Rs can be calculated Rd, to avoid the disadvantages of the parasitic resistance with the device the bias point changes, and after comparing with the traditional method, the fitting effect of the new method is much more satisfactory.2, the relationship between AlGaN/AlN/GaN heterostructure field effect transistor size cutoff frequency fT and the device, and analyzes the Influence of the main parameters of fT is GM and the gate capacitor. Study the intrinsic variation of parameters of the device, found the intrinsic transconductance of GM with the increase of the frequency decreased, it can be attributed to the low surface leakage between gate and source, gate leakage current region is modulated, which increases the cross guide, when when the frequency increases, the electron surface trap states have not enough time to respond the external signal changes, the transconductance decreased.3, the AlGaN/AlN/GaN heterojunction field effect transistor current collapse effect, the test results of gate voltage on the DC pulse contrast test device, found that the current collapse effect obviously, at the same time for different gate the pulse width, the pulse width is smaller, the device current collapse degree is obvious, because the test devices do not passivation, analyzes the relationship between the current collapse effect and device surface state combination between "virtual gate" model.

【學(xué)位授予單位】：山東大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN386

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本文編號(hào)：1578414