本文選題：憶阻器　切入點(diǎn)：氧化鋅　出處：《江蘇大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：憶阻器是一種兩端器件,它能夠?qū)崿F(xiàn)不同電阻態(tài)之間的快速轉(zhuǎn)換,并且制備過程與現(xiàn)有的CMOS工藝兼容,在信息存儲(chǔ)和神經(jīng)突觸模擬方面有著獨(dú)特的優(yōu)勢。為了提高器件集成度,憶阻器往往采用交叉陣列結(jié)構(gòu)制備,從而存在串?dāng)_電流問題,通常在電路中串聯(lián)二極管、晶體管等選通元件來抑制串?dāng)_電流,但是,這不可避免會(huì)嚴(yán)重限制器件的集成度。較為理想的辦法是通過憶阻器自身的整流特性來抑制電路中的串?dāng)_電流。本文采用ZnO作為阻變材料,首先研究二極管(D)和憶阻器(R)串聯(lián)結(jié)構(gòu)的整流和憶阻行為,其次重點(diǎn)研究自整流憶阻器件。主要研究內(nèi)容和結(jié)果如下:(1)1D1R結(jié)構(gòu)的制備及性能研究。采用磁控濺射法制備多晶ZnO薄膜和鋁摻雜的ZnO(AZO)薄膜。分析了濺射功率、濺射時(shí)間、腔體本底真空、氬氧比等工藝參數(shù)對(duì)ZnO薄膜電學(xué)性能的影響,發(fā)現(xiàn)氬氧比對(duì)于薄膜電阻轉(zhuǎn)變性能有很大影響,Ar:O2為8:2時(shí),ZnO薄膜的電阻轉(zhuǎn)變特性最優(yōu)。以Pt/ZnO/Pt作為憶阻器(R),Pt/AZO/ZnO/Pt作為肖特基二極管(D),通過串聯(lián)構(gòu)建了1D1R結(jié)構(gòu),該結(jié)構(gòu)具有單極性電阻轉(zhuǎn)變特性的同時(shí),還能一定程度抑制負(fù)向電流。然而1D1R結(jié)構(gòu)制備過程較為復(fù)雜,并且器件性能較差。(2)Ti/ZnO/Pt自整流憶阻器件制備及性能研究。一般來說,由于Pt功函數(shù)和ZnO電子親和勢之間的差異,Pt與ZnO之間屬于肖特基接觸。本文對(duì)Pt/ZnO/Pt在Ar氣氛中進(jìn)行快速退火,發(fā)現(xiàn)由于ZnO中氧空位的增多,Pt與ZnO之間可以實(shí)現(xiàn)準(zhǔn)歐姆接觸。類似地,對(duì)于Ti/ZnO/Pt結(jié)構(gòu),Ti/ZnO界面處會(huì)天然形成TiOx薄層,Zn O中氧空位增多,導(dǎo)致ZnO/Pt形成準(zhǔn)歐姆接觸。而對(duì)于Ti/ZnO界面,由于多晶薄膜易吸附空氣中水汽,對(duì)界面接觸性質(zhì)產(chǎn)生很大影響,導(dǎo)致Ti/ZnO表現(xiàn)出明顯肖特基接觸行為,因此Ti/Zn O/Pt原始態(tài)器件表現(xiàn)出自整流特性。但是器件Forming以后自整流效應(yīng)消失或明顯減弱,因此無法解決電路中的串?dāng)_電流問題。(3)Ti/ZnO/AZO/Pt自整流憶阻器件制備及性能研究。通過器件結(jié)構(gòu)及工藝參數(shù)優(yōu)化,制備出了基于Ti/ZnO/AZO/Pt結(jié)構(gòu)的自整流憶阻器。該自整流器件表現(xiàn)出無Forming以及非易失的雙極性憶阻特性,同時(shí)具有很好的耐疲勞特性,開關(guān)比為102。通過對(duì)器件I-V曲線進(jìn)行擬合分析,結(jié)合變溫測試,發(fā)現(xiàn)Ti/ZnO/AZO/Pt器件憶阻行為屬于純電子效應(yīng),其導(dǎo)電行為來源于空間電荷限制電流或肖特基發(fā)射機(jī)理。在此基礎(chǔ)上模擬了生物神經(jīng)突觸的長程可塑性以及學(xué)習(xí)-遺忘-再學(xué)習(xí)經(jīng)驗(yàn)式行為。結(jié)果表明,Ti/ZnO/AZO/Pt自整流憶阻器能很好解決電路中的串?dāng)_電流問題,因此在存儲(chǔ)器和神經(jīng)突觸器件方面具有潛在的應(yīng)用價(jià)值。
[Abstract]:The memristor is a device at both ends, it can realize the fast conversion between different resistance state, and preparation process is compatible with the existing CMOS process, the information storage and synaptic simulation has a unique advantage. In order to improve the device integration, the memristor often adopts the cross array structure and preparation. The presence of crosstalk current problems, usually in the circuit in series diode, transistor gate element to suppress crosstalk current, but it will inevitably restrict the integration of device. The ideal way is to suppress the crosstalk current in the circuit through a rectification characteristic of the memristor itself. This paper uses ZnO as the resistive material, first of all study on diode (D) and the memristor (R) series structure rectification and memristive behavior, then focus on the self rectifying memristive device. The main research contents and results are as follows: (1) preparation and performance of 1D1R structure. The. Prepared by magnetron sputtering of polycrystalline ZnO thin film and aluminum doped ZnO thin film (AZO). Analysis of the sputtering power, sputtering time, the effect of vacuum cavity bottom, argon oxygen ratio and other parameters on the electrical properties of ZnO thin films, found that the ratio of argon to oxygen has a great influence on the performance of Ar:O2 thin film resistance change, 8:2 when the optimal resistance switching properties of ZnO thin films. Using Pt/ZnO/Pt as the memristor (R), Pt/AZO/ZnO/Pt (D), as a Schottky diode 1D1R structure constructed by series, this structure has the characteristics of change of unipolar resistance at the same time, but also a certain degree of inhibition of the negative current. However, the structure of 1D1R preparation process is complex, and the performance of the device is poor. (2) research and preparation of Ti/ZnO/Pt resistance device performance self rectifying memory. In general, due to the work function of Pt and ZnO electron affinity difference between potential, belongs to the Schottky contact between Pt and ZnO. The Pt/ZnO/Pt in Ar atmosphere In the fast annealing, found that due to the increase of oxygen vacancies in ZnO, between Pt and ZnO can realize quasi ohmic contact. Similarly, for the Ti/ZnO/Pt structure, Ti/ZnO interface will naturally formed TiOx layer, oxygen vacancy of Zn O increased, leading to ZnO/Pt formation of quasi ohmic contact. For the Ti/ ZnO interface, the polycrystalline thin film easy to absorb moisture in the air, have a great impact on the interface properties, resulting in Ti/ZnO showed obvious Schottky contact behavior, so the Ti/Zn O/Pt devices from the original state. But after rectifying characteristic device Forming self rectifying effect disappeared or significantly decreased, so it can not solve the current problem of crosstalk in a circuit. (3) study and performance of resistance device preparation of Ti/ZnO/AZO/Pt self rectifying memory. Through the device structure and process parameters optimization, was prepared by self rectifying memristor based on Ti/ZnO/AZO/Pt structure. The self rectifying devices showed no Forming As well as non bipolar memristor characteristics of volatile, and has good anti fatigue properties, switch ratio is 102. by fitting analysis of I-V curve with a temperature testing device, Ti/ZnO/AZO/Pt device, the memristor behavior belongs to the pure electronic effect, the conductive behavior from the space charge limited current or Schottky emission mechanism based. On the simulation of the biological neural synaptic plasticity and long-term learning forgetting - learning experience behavior. The results show that the Ti/ZnO/AZO/Pt rectifier memristor can solve the problem of crosstalk current in the circuit, so it has potential application value in memory and synaptic devices.

【學(xué)位授予單位】：江蘇大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN60

【參考文獻(xiàn)】

相關(guān)期刊論文 前4條

1 張超超;尚杰;郝健;張文斌;冀正輝;劉鋼;李潤偉;;憶阻器在神經(jīng)突觸仿生中的應(yīng)用研究進(jìn)展[J];材料導(dǎo)報(bào);2015年15期

2 左青云;劉明;龍世兵;王琴;胡媛;劉琦;張森;王艷;李穎_";;阻變存儲(chǔ)器及其集成技術(shù)研究進(jìn)展[J];微電子學(xué);2009年04期

3 徐小麗;馬書懿;陳彥;魏晉軍;張國恒;孫小菁;;氧分壓對(duì)磁控濺射制備ZnO薄膜的結(jié)構(gòu)及光學(xué)特性的影響[J];發(fā)光學(xué)報(bào);2007年05期

4 尤志寧,周昌樂,張克志;基于新型神經(jīng)元模型上的突觸可塑性建模[J];廈門大學(xué)學(xué)報(bào)(自然科學(xué)版);2005年S1期

相關(guān)博士學(xué)位論文 前1條

1 王中強(qiáng);金屬氧化物憶阻器件的制備及其阻變存儲(chǔ)、神經(jīng)突觸仿生研究[D];東北師范大學(xué);2013年

，

本文編號(hào)：1573990