本文選題：太赫茲　切入點(diǎn)：二倍頻　出處：《電子科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：近年來,太赫茲技術(shù)的高速發(fā)展帶來了太赫茲產(chǎn)業(yè)的繁榮,其中因?yàn)樘掌澅额l器是太赫茲頻率源獲得的一個最重要途徑,所以,太赫茲倍頻器的研究對太赫茲技術(shù)的發(fā)展具有十分重要的意義。本文介紹了太赫茲波的特點(diǎn)、倍頻器的國內(nèi)外發(fā)展動態(tài)及倍頻器的基本理論和分析方法;介紹了一種新型的加工工藝——MEMS工藝,該工藝的精度優(yōu)于傳統(tǒng)工藝,在實(shí)現(xiàn)高頻器件上具有獨(dú)特的優(yōu)勢。本文從倍頻器的工作原理出發(fā),采用ADS和HFSS仿真軟件,分別仿真設(shè)計了K波段二倍頻器、W波段二倍頻器和290GHz的二倍頻器。本文采用ATF36163晶體管對K波段二倍頻器進(jìn)行了設(shè)計,其結(jié)構(gòu)由匹配電路、直流偏置與濾波電路組成。通過ADS仿真,得到的該倍頻器二次諧波的輸出功率為3.15dBm;采用傳統(tǒng)的加工工藝對其進(jìn)行了加工,通過實(shí)測,其二次諧波的輸出功率達(dá)到了1.06dBm。本文采用肖特基二極管對W波段二倍頻器進(jìn)行了設(shè)計,該倍頻器的結(jié)構(gòu)主要由波導(dǎo)腔體和石英基片屏蔽微帶線組成。同時,波導(dǎo)微帶探針、偏置電路、濾波器、匹配電路分別安置在該微帶線相應(yīng)位置。用ADS和HFSS仿真軟件對該倍頻器進(jìn)行聯(lián)合仿真,得到的二次諧波輸出功率為1.402dBm。在W波段倍頻器設(shè)計的基礎(chǔ)上,本文設(shè)計了290GHz太赫茲頻段二倍頻器,其結(jié)構(gòu)與W波段二倍頻器相似。采用ADS和HFSS對其進(jìn)行了聯(lián)合仿真,該倍頻器的二次諧波輸出功率達(dá)到了7.889dBm。本文通過對不同頻段倍頻器的仿真設(shè)計或加工測試,驗(yàn)證了本文倍頻器研究方案的合理性,理論分析的正確性。
[Abstract]:In recent years, the rapid development of terahertz technology has brought about the prosperity of terahertz industry, because terahertz frequency multiplier is one of the most important ways to obtain terahertz frequency source, so, The research of terahertz frequency multiplier is of great significance to the development of terahertz technology. This paper introduces the characteristics of terahertz wave, the domestic and international development of frequency multiplier, and the basic theory and analysis method of frequency multiplier. In this paper, a new fabrication process, MEMS process, is introduced. The precision of this process is superior to that of the traditional process, and it has unique advantages in the realization of high frequency devices. Based on the working principle of frequency multiplier, ADS and HFSS simulation software are used in this paper. The K-band doubler and 290GHz double-multiplier are simulated and designed respectively. In this paper, the ATF36163 transistor is used to design the K-band doubler, the structure of which is matched by the matching circuit. Through ADS simulation, the output power of the second harmonic is 3.15dBm.The traditional processing technology is used to process the frequency multiplier. The output power of the second harmonic is up to 1.06dBm.The W-band doubler is designed by Schottky diode. The structure of the frequency multiplier is mainly composed of the waveguide cavity and the quartz substrate shielded microstrip line. At the same time, the waveguide microstrip probe, The bias circuit, filter and matching circuit are arranged in the corresponding position of the microstrip line respectively. The frequency multiplier is simulated by ADS and HFSS software. The output power of the second harmonic is 1.402 dBm. on the basis of the design of the W-band frequency multiplier, the second harmonic output power is 1.402 dBm. In this paper, a 290GHz terahertz doubler is designed, the structure of which is similar to that of W-band doubler. The simulation is carried out by ADS and HFSS. The second harmonic output power of the multiplier is 7.889 dBm.Through the simulation design or machining test of the frequency multiplier in different frequency bands, the rationality of the research scheme and the correctness of the theoretical analysis are verified.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN771

【參考文獻(xiàn)】

相關(guān)博士學(xué)位論文 前1條

1 鐘富群;固態(tài)太赫茲前端關(guān)鍵技術(shù)研究[D];電子科技大學(xué);2012年

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本文編號：1573665