發(fā)布時間：2018-03-05 03:23

  本文選題：環(huán)境友好半導體　切入點：磁控濺射　出處：《貴州大學》2015年碩士論文　論文類型：學位論文

【摘要】：環(huán)境友好型半導體材料硅化鎂(Mg2Si)是一種窄帶隙間接半導體材料。目前,微電子行業(yè)主要基于Si材料進行應(yīng)用,在Si襯底上生長Mg2Si薄膜的工藝,可以很好地與Si工藝兼容,因此Mg2Si/Si異質(zhì)結(jié)結(jié)構(gòu)具有重大的研究價值。本文采用磁控濺射方法分別在Si襯底、絕緣襯底上制備環(huán)境友好型Mg2Si薄膜,研究濺射Mg膜厚度對Mg2Si薄膜質(zhì)量的影響,在此基礎(chǔ)上圍繞Mg2Si基異質(zhì)結(jié)LED器件制備工藝進行研究,并對Mg2Si薄膜的電學、光學性質(zhì)進行研究。首先,在室溫下采用磁控濺射方法,在Si襯底上沉積Mg膜,絕緣玻璃襯底上沉積Si膜和Mg膜,然后在低真空(10-1Pa-10-2Pa)氛圍下進行熱處理制備Mg2Si薄膜。XRD、SEM結(jié)果表明,400℃下退火4h,制備出單一相的Mg2Si薄膜,且制備的Mg2Si薄膜晶粒致密、均勻和連續(xù),表面平整,結(jié)晶度良好。其次,研究了Mg膜厚度對Mg2Si半導體薄膜生長的影響及Mg膜厚度與退火后生成的Mg2Si薄膜厚度之間的關(guān)系。結(jié)果表明,Mg膜厚度在2.52μm、2.72μm時,表現(xiàn)出了良好的結(jié)晶度和平整度,Mg2Si薄膜的厚度隨Mg厚度的增加而增加,約為Mg厚度的0.9-1.1倍。該研究將對以Mg2Si薄膜為基設(shè)計器件起重要指導作用。最后,研究了Mg2Si基異質(zhì)結(jié)發(fā)光器件的制備,在Si襯底上制備了Mg2Si/Si、Si/Mg2Si/Si異質(zhì)結(jié)LED器件,采用四探針測試系統(tǒng)、半導體特性分析儀、穩(wěn)態(tài)/瞬態(tài)熒光光譜儀等設(shè)備對Mg2Si/Si、Si/Mg2Si/Si異質(zhì)結(jié)進行電學、光學性質(zhì)研究。結(jié)果表明:Mg2Si薄膜的電阻率和方塊電阻隨著Mg2Si厚度的增加而減小;Mg2Si/Si、Si/Mg2Si/Si異質(zhì)結(jié)表現(xiàn)出了較好的單向?qū)ㄌ匦?且Si/Mg2Si/Si雙異質(zhì)結(jié)結(jié)構(gòu)的導通電壓比較大,約為3 V;Mg2Si/n-Si異質(zhì)結(jié)器件在波長為1346 nm時,光致發(fā)光強度最大。在絕緣襯底上制備的Mg2Si薄膜,在波長為1346 nm時,光致發(fā)光強度最大;對比不同襯底上制備Mg2Si薄膜的光致發(fā)光,在高純石英襯底制備的Mg2Si薄膜發(fā)光性能更好,且具有紅外單色發(fā)光特性。
[Abstract]:Mg _ 2Si) is a narrow band gap indirect semiconductor material. At present, the microelectronics industry is mainly based on Si materials, and the process of growing Mg2Si thin films on Si substrates can be compatible with Si process. In this paper, environment-friendly Mg2Si thin films were prepared on Si substrates and on insulating substrates by magnetron sputtering. The effect of mg film thickness on the quality of Mg2Si films was studied. On this basis, the fabrication process of Mg2Si based heterojunction LED devices was studied, and the electrical and optical properties of Mg2Si thin films were studied. Firstly, mg films were deposited on Si substrates by magnetron sputtering at room temperature. Si and mg films were deposited on insulating glass substrates. Mg2Si films were prepared by heat treatment in low vacuum (10-1Pa-10-2Pa) atmosphere. The results showed that Mg2Si films were prepared by annealing at 400 鈩，

本文編號：1568539