本文選題：紅外焦平面　切入點：碲鎘汞　出處：《紅外與毫米波學(xué)報》2017年05期 　論文類型：期刊論文

【摘要】：采用As摻雜和激活技術(shù)制備的p+-on-n異質(zhì)結(jié)材料是獲得高性能長波碲鎘汞紅外焦平面器件的關(guān)鍵技術(shù)之一,得到了廣泛關(guān)注.采用變溫IV擬合的方法,對不同As摻入濃度與器件結(jié)性能相關(guān)性進行了分析,發(fā)現(xiàn)降低結(jié)區(qū)內(nèi)As摻雜濃度可以有效抑制器件的陷阱輔助隧穿電流.擬合結(jié)果表明,較高濃度的Nt很可能與高濃度As摻入相關(guān).因此As的穩(wěn)定均勻摻入和激活被認為是主要技術(shù)挑戰(zhàn).實驗研究了分子束外延過程中Hg/Te束流比與As摻入效率的關(guān)系,發(fā)現(xiàn)相對富Hg的外延條件有助于提高As摻雜效率.研究還發(fā)現(xiàn)As的晶圓內(nèi)摻雜均勻性與Hg/Te束流比的均勻性密切相關(guān).對As的激活退火進行了研究,發(fā)現(xiàn)在飽和Hg蒸汽壓中采用300℃/16h+420℃/1 h+240℃/48 h的退火條件能明顯提升碲鎘汞中As原子的激活率.
[Abstract]:P-on-n heterojunction materials fabricated by as doping and activation techniques are one of the key technologies for obtaining high performance long-wave mercury cadmium telluride infrared focal plane devices. The correlation between as doping concentration and device junction performance is analyzed. It is found that decreasing as doping concentration in junction region can effectively suppress the trap assisted tunneling current of the device. Therefore, the stable and uniform incorporation and activation of as is considered to be a major technical challenge. The relationship between Hg/Te beam ratio and as incorporation efficiency in molecular beam epitaxy (MBE) is investigated experimentally. It is found that the epitaxial conditions with relatively rich Hg contribute to the improvement of as doping efficiency. It is also found that the homogeneity of doping in as wafer is closely related to the uniformity of Hg/Te beam ratio. The activation annealing of as is studied. It is found that the activation rate of as atoms in Hg tellurium can be significantly increased by annealing at 300 鈩，

本文編號：1562890