本文選題：GaN基LED　切入點(diǎn)：電子束流輻照　出處：《天津工業(yè)大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著半導(dǎo)體器件應(yīng)用的不斷發(fā)展,越來(lái)越多的光電子器件需要工作在輻照極端惡劣的環(huán)境中,這對(duì)光電子器件抗輻照能力提出了更高的要求。GaN材料作為第三代半導(dǎo)體的代表,在許多光電器件方面具有重要應(yīng)用。氮化鎵(GaN)材料具有寬的直接帶隙、強(qiáng)的原子鍵、高的熱導(dǎo)率、化學(xué)穩(wěn)定性好等諸多優(yōu)點(diǎn),在光電子、高溫大功率器件和高頻微波器件等方面都有重要應(yīng)用,而且采用藍(lán)光GaN與熒光粉復(fù)合生成白光是制作白光LED的重要方法。同時(shí)GaN材料具有較強(qiáng)的抗輻照能力,在未來(lái)空間探測(cè)以及核技術(shù)中GaN器件必將具有廣闊的應(yīng)用前景,因此研究GaN材料及器件的輻照效應(yīng)意義重大。本文主要研究了不同能量和劑量的電子束流輻照對(duì)GaN基LED的光電學(xué)性能的影響,重點(diǎn)研究GaN基LED的峰值波長(zhǎng)、光強(qiáng)、色溫、色純度、工作電流等參數(shù)受電子束輻照效應(yīng)影響。本文主要做了以下研究:1.利用2.5GeV電子束流輻照GaN基LED時(shí),隨著輻照的劑量的不斷增加LED的光功率呈指數(shù)下降,工作電流不斷升高,發(fā)光波長(zhǎng)出現(xiàn)了藍(lán)移,而且經(jīng)點(diǎn)亮輻照的LED,在輻照后工作性能更加穩(wěn)定,這主要是因?yàn)檩椪者^(guò)程中產(chǎn)生了不同類型的缺陷,同時(shí)輻照中存在點(diǎn)亮自退火的過(guò)程。2.利用1.5MeV電子束流輻照白光LED燈板時(shí),輻照使LED的光效增高16%,峰值波長(zhǎng)發(fā)生藍(lán)移、色溫升高、色純度下降,這主要是因?yàn)檩椪者^(guò)程使熒光粉的基質(zhì)(YAG)與稀土元素發(fā)光中心(Ce3+)的距離減小,發(fā)光中心數(shù)量增多以及極化效應(yīng)使GaN材料的禁帶寬度變大等作用所引起的。3.通過(guò)蒙特卡洛方法對(duì)高能電子輻照過(guò)程中電子能量的傳輸以及射程分布進(jìn)行了模擬,并基于以上模擬理論建立簡(jiǎn)化的隨機(jī)模型,用CASINO軟件對(duì)輻照過(guò)程中電子運(yùn)行軌跡進(jìn)行了仿真。仿真結(jié)果與理論分析結(jié)果吻合較好,表明使用該方法模擬高能電子輻照能量傳輸過(guò)程具有一定的實(shí)用價(jià)值。
[Abstract]:With the continuous development of application of semiconductor devices, optoelectronic devices and more radiation needs to work in extreme environments, the anti radiation ability of optoelectronic devices is put forward higher requirements of.GaN materials as the representative of the third generation semiconductor, has many important applications in optoelectronic devices.. Gan (GaN) material has a direct bandgap the width of atomic bond strength, high thermal conductivity, good chemical stability and other advantages in optoelectronics, high-temperature and high-power devices and high frequency microwave devices are widely used, and the use of blue phosphors and GaN composite white light generation is an important method for white LED. At the same time, GaN has strong anti radiation materials ability, GaN devices will have broad application prospects in future space exploration and nuclear technology, so the research significance of the irradiation effect of GaN materials and devices. This paper mainly research The influence of the photoelectric electron beam of different energy and dose of irradiation on GaN based LED flow properties, peak wavelength, focus on the GaN based LED light intensity, color temperature, color purity, operating current and other parameters affected by electron beam irradiation. This paper mainly studies the following: 1. using 2.5GeV electron beam irradiation GaN based on LED, with the dose of irradiation increased light power LED decreases exponentially, working current increases, the wavelength of the light blue shift occurred, and the light irradiation of LED after irradiation in the work performance is more stable, this is mainly because of the different types of defects produced during irradiation, and light since the irradiation annealing process using.2. 1.5MeV electron beam irradiation white LED lamp panel, the irradiation causes the optical efficiency of LED increased 16%, the peak wavelength blue shift, color temperature, color purity decline, this is mainly because of the irradiation process fluorescence. Powder matrix (YAG) and rare earth luminescent center (Ce3+) distance decreases, the increase in the number of luminescence centers and the polarization effect caused by the band gap of GaN material becomes larger the role of the.3. simulation by Monte Carlo method on transmission electron energy of high-energy electron irradiation in the process and the range distribution was carried out, and based on the above simulation a simplified stochastic model theory, the simulation of electron trajectory during irradiation was carried out with CASINO software. The simulation results agree well with the results of theoretical analysis and simulation results indicate that the method of high energy electron irradiation energy transfer process has a certain practical value.

【學(xué)位授予單位】：天津工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN312.8

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