本文關(guān)鍵詞： 氧化鋅 柔性器件 聲表面波 薄膜體聲波諧振器 傳感器　出處：《浙江大學(xué)》2015年博士論文　論文類型：學(xué)位論文

【摘要】：得益于材料科學(xué)和先進(jìn)微納米加工工藝的進(jìn)步,近年來柔性電子發(fā)展迅速。柔性電子不僅彌補(bǔ)了傳統(tǒng)固體電子的不足,同時(shí)其也是電子學(xué)一個(gè)新興的重要分支,有助于拓展整個(gè)電子學(xué)的應(yīng)用范圍。學(xué)術(shù)界陸續(xù)報(bào)導(dǎo)了許多柔性電子的應(yīng)用,但目前為止,有關(guān)柔性微機(jī)電系統(tǒng)一(MEMS)的報(bào)導(dǎo)還很少。在眾多的MEMS器件中,聲表面波(SAW)器件是最簡(jiǎn)單的一種MEMS器件,它與另一類MEMS器件一薄膜體聲波諧振器(FBAR)一起,常用作傳感器來使用。本文研究了在柔性聚酰亞胺(PI)和聚對(duì)苯二甲酸乙二酯(PET)上通過磁控濺射方法沉積具有大晶粒尺寸且具有良好(0002)晶體取向的ZnO薄膜的制備方法,研究了該種ZnO薄膜的特性。并成功地在ZnO/PI和ZnO/PET復(fù)合基板上制備出高性能的柔性SAW器件。所制備的柔性SAW器件具有兩個(gè)主要的諧振模態(tài),分別對(duì)應(yīng)于廣義蘭姆波(Lamb Wave)的0階對(duì)稱和反對(duì)稱模態(tài)。論文探討了ZnO薄膜厚度、器件波長(zhǎng)和叉指電極間距對(duì)這種柔性器件的影響。由于制備在柔性基板上,該種器件可以彎折,在最大應(yīng)變量為2500με的情況下,其可彎曲次數(shù)超過100次,這表面該種器件可作為柔性器件來使用。同時(shí)本文還研究了這種器件在溫度、濕度、紫外光和應(yīng)變傳感等領(lǐng)域的應(yīng)用,器件對(duì)這些外部參數(shù)反應(yīng)敏感,其特性不遜于類似的固體基板上的SAW傳感器。初步揭示了柔性SAW器件在傳感領(lǐng)域的應(yīng)用前景。本文還研究了另一類高頻聲波器件FBAR,所研究的FBAR器件制備于硅襯底上,采用體硅背面刻蝕型結(jié)構(gòu)。由于使用Si02作為支撐層,所制備的器件呈現(xiàn)兩個(gè)主要的諧振頻率。在這一基板結(jié)構(gòu)的基礎(chǔ)上,本文提出一種帶密封腔的新型FBAR壓強(qiáng)傳感器結(jié)構(gòu),這主要通過用硅片密封器件背面溝槽來實(shí)現(xiàn)。本文研究了這種帶密封腔的FBAR傳感器在不同溫度和壓強(qiáng)下的響應(yīng),其兩個(gè)諧振頻率隨溫度和壓強(qiáng)變化呈線性變化。這說明可以使用單一FBAR器件來同時(shí)測(cè)量溫度和壓強(qiáng)。這種雙模態(tài)FBAR器件結(jié)構(gòu)簡(jiǎn)單、造價(jià)低廉且無需特殊封裝,具有廣泛的應(yīng)用前景。
[Abstract]:Thanks to the progress of material science and advanced micro-nano processing technology, flexible electrons have developed rapidly in recent years. Flexible electrons not only make up for the shortcomings of traditional solid electrons, but also become an important branch of electronics. The academic circles have reported many applications of flexible electronics, but so far, there are few reports on flexible MEMS applications. Among many MEMS devices, Surface acoustic wave (saw) devices are one of the simplest MEMS devices, along with the thin film bulk acoustic resonator (FBA), another kind of MEMS device. ZnO thin films with large grain size and good crystal orientation have been deposited on flexible polyimide (Pi) and poly (ethylene terephthalate) (PET) by magnetron sputtering. The characteristics of the ZnO thin film are studied, and the high performance flexible SAW devices are successfully fabricated on the ZnO/PI and ZnO/PET composite substrates. The fabricated flexible SAW devices have two main resonant modes. The effects of the thickness of ZnO film, the wavelength of the device and the interDigital electrode spacing on this kind of flexible device are discussed in this paper. The device can be bent because it is fabricated on a flexible substrate, which corresponds to the 0-order symmetric and antisymmetric modes of the generalized Lamb wave wave, and the effect of the thickness of the ZnO film, the wavelength of the device and the interDigital electrode spacing on the device is discussed. When the maximum strain is 2500 渭 蔚, the number of bending is more than 100 times. The device can be used as a flexible device on this surface. The applications of the device in temperature, humidity, ultraviolet light and strain sensing are also studied in this paper. The device is sensitive to these external parameters, Its characteristics are not inferior to those of SAW sensors on similar solid substrates. The application prospects of flexible SAW devices in the field of sensing are preliminarily revealed. Another kind of high frequency acoustic devices, FBA, is studied in this paper. The FBAR devices studied are fabricated on silicon substrates. A novel FBAR pressure sensor structure with sealed cavity is proposed in this paper, which is based on the bulk silicon back etching structure. Because of the use of Si02 as the supporting layer, the fabricated device presents two main resonant frequencies, and based on the substrate structure, a new type of FBAR pressure sensor structure with sealed cavity is proposed in this paper. In this paper, the response of the FBAR sensor with seal cavity at different temperatures and pressures is studied. The two resonant frequencies vary linearly with temperature and pressure. This shows that a single FBAR device can be used to measure temperature and pressure simultaneously. This dual-mode FBAR device has simple structure, low cost and no special package. It has wide application prospect.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN65
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本文編號(hào)：1548464