本文關(guān)鍵詞： 納米結(jié)構(gòu) 摻雜改性 光致發(fā)光　出處：《蘭州大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：AlN作為第三代半導(dǎo)體材料的代表,其6.2eV的特寬帶隙使其在發(fā)光器件的應(yīng)用方面引起了人們極大的關(guān)注。但是,由于制備AlN材料較困難,所需的條件較嚴(yán)苛,因此限制了它的發(fā)展。同時(shí),為了提高AlN材料的性能,通常對(duì)其摻雜不同的元素,來滿足不同方面的需求。本文采用CVD的方法,通過改變實(shí)驗(yàn)中的可控參數(shù),獲得了AlN最佳的生長條件。同時(shí)研究了對(duì)AlN摻雜不同的元素時(shí),其形貌和性能的變化。主要的研究?jī)?nèi)容如下：(1)無水氯化鋅為摻雜源制備Zn摻雜AlN樣品。與未摻雜樣品相比,Zn的合入促進(jìn)了AlN的表面擴(kuò)散但卻抑制了其縱向生長速度。PL光譜顯示,樣品在紫外光區(qū)展現(xiàn)了很好的發(fā)光性能。將樣品在高溫下進(jìn)行退火處理,所得PL光譜證明272nm的發(fā)光峰與Zn有關(guān)。通過改變NH3流量,發(fā)現(xiàn)30sccm流量值下,樣品具有最高的結(jié)晶度和發(fā)光強(qiáng)度。同樣的條件下,Zn摻雜量的改變影響了與氧相關(guān)的缺陷能級(jí),改變了峰之間的相對(duì)強(qiáng)度。(2)納米鋅粉為摻雜源制備Zn摻雜AlN樣品。生長溫度顯著的改變了納米結(jié)構(gòu)的表面形貌和尺寸。Zn的摻雜引入了新的缺陷和雜質(zhì)能級(jí),在紫外區(qū)有效的調(diào)節(jié)了AlN的發(fā)光波長,同時(shí)導(dǎo)致峰位和峰的相對(duì)強(qiáng)度發(fā)生改變。而Si片的放置角度也影響了Zn的摻雜,平行放置更有利于Zn的合入。(3)無水CuCl2為摻雜源制備Cu摻雜AlN樣品。樣品在可見光波段表現(xiàn)出了良好的發(fā)光性能。探討了生長溫度、摻雜量、NH3/Ar流量比對(duì)樣品的形貌和發(fā)光的影響。生長溫度和NH3/Ar流量比對(duì)Cu的摻入起了重要的作用。當(dāng)Cu摻雜量比較大時(shí),樣品中出現(xiàn)了合金相AlCu,導(dǎo)致晶體中鋁空位增多,進(jìn)而影響了各個(gè)發(fā)光峰之間的相對(duì)強(qiáng)度。
[Abstract]:As the representative of the third generation semiconductor material, AlN has attracted much attention because of its wide band gap of 6.2 EV. However, due to the difficulty of preparing AlN materials, the necessary conditions are more severe. In order to improve the properties of AlN materials, different elements are usually doped to meet the needs of different aspects. In this paper, the method of CVD is used to change the controllable parameters in experiments. The optimum growth conditions of AlN were obtained. At the same time, when AlN was doped with different elements, The main contents of this study are as follows: 1) Zn-doped AlN samples were prepared by anhydrous zinc chloride as dopant source. Compared with the undoped samples, the combination of Zn and Zn promoted the surface diffusion of AlN, but inhibited its longitudinal growth rate. The PL spectra of samples annealed at high temperature show that the luminescence peak at 272 nm is related to Zn. By changing the flow rate of NH3, it is found that the flow rate of 30sccm is at 30sccm. The sample has the highest crystallinity and luminescence intensity. Zn-doped AlN samples were prepared by changing the relative strength between peaks. The growth temperature significantly changed the surface morphology and size of the nanostructures. Zn doping introduced new defects and impurity energy levels. The luminescence wavelength of AlN was adjusted effectively in the ultraviolet region, and the peak position and the relative intensity of the peak changed, and the placement angle of Si wafer also affected the doping of Zn. Parallel placement is more favorable for Zn / CuCl2 doping source to prepare Cu-doped AlN samples. The samples exhibit good luminescence properties in the visible light band. The growth temperature is discussed. The growth temperature and the flow rate of NH3/Ar play an important role in the doping of Cu. When the doping amount of Cu is high, the Al Cu phase appears in the sample, which leads to the increase of Al vacancy in the crystal. Furthermore, the relative intensity of each luminescence peak is affected.
【學(xué)位授予單位】：蘭州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304

【參考文獻(xiàn)】

相關(guān)期刊論文 前2條

1 王維穎;金鵬;劉貴鵬;李維;劉斌;劉興f ;王占國;;Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition[J];Chinese Physics B;2014年08期

2 姜良寶;劉宇;左思斌;王文軍;;Room-temperature ferromagnetism with high magnetic moment in Cu-doped AlN single crystal whiskers[J];Chinese Physics B;2015年02期

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本文編號(hào)：1540963