本文關(guān)鍵詞： 超高速碰撞 帶電粒子 電磁干擾 半導(dǎo)體器件　出處：《北京理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：當(dāng)前空間碎片與航天器的碰撞事件日益頻繁,科學(xué)家們在尋找原因的過程中逐漸發(fā)現(xiàn):超高速碰撞產(chǎn)生的帶電粒子對航天器的電磁毀傷并不亞于其力學(xué)毀傷。超高速碰撞過程中形成的帶電粒子在運動的過程中產(chǎn)生的電磁場以及帶電粒子本身的注入會干擾半導(dǎo)體器件正常工作甚至導(dǎo)致半導(dǎo)體器件的毀傷,從而導(dǎo)致整個電路系統(tǒng)的失效。本文通過6.4mm半徑鋁彈丸超高速撞擊鋁靶板來模擬太空中碎片撞擊航天器的過程,研究其對半導(dǎo)體器件的電磁干擾效應(yīng)。主要內(nèi)容如下:1)超高速碰撞過程中電磁效應(yīng)的產(chǎn)生是由于在彈丸超撞擊靶板的過程中會導(dǎo)致材料的電離,形成帶電粒子。帶電粒子的電荷分布特征直接影響著其對半導(dǎo)體器件的電磁干擾效應(yīng)。本文首先對超高速碰撞產(chǎn)生的帶電粒子的電荷分布特征進(jìn)行研究,設(shè)計多角度電荷收集系統(tǒng),在正碰撞及斜碰撞條件下收集超高速碰撞產(chǎn)生的電荷,從而推斷超高速碰撞產(chǎn)生的帶電粒子的電荷分布模型,實驗結(jié)果表明在超高速正碰撞的條件下產(chǎn)生的正電荷主要分布在54o-81o角度區(qū)域;在超高速碰撞角度為45o的條件下正電荷主要分布在45o-90o角度區(qū)域。并且據(jù)此進(jìn)一步推斷出超高速碰撞產(chǎn)生帶電粒子的電荷分布模型。2)根據(jù)半導(dǎo)體器件內(nèi)部的結(jié)構(gòu)及其制作工藝結(jié)合超高速碰撞產(chǎn)生的帶電粒子的電荷分布規(guī)律,研究超高速碰撞產(chǎn)生的帶電粒子對半導(dǎo)體器件的干擾機理。根據(jù)帶電粒子的分離電荷量推算出超高速碰撞產(chǎn)生的電磁場,通過計算說明超高速碰撞產(chǎn)生的電磁場足以干擾半導(dǎo)體器件正常工作甚至造成毀傷;研究帶電粒子注入半導(dǎo)體器件的引腳,PN結(jié)內(nèi)部以及電介質(zhì)內(nèi)部對其產(chǎn)生干擾的機理,通過理論分析證明超高速碰撞產(chǎn)生的帶電粒子注入到半導(dǎo)體器件內(nèi)部足以干擾半導(dǎo)體器件正常工作。3)在靶板周圍布置半導(dǎo)體器件進(jìn)行測試,實驗結(jié)果表明超高速碰撞過程中,在與靶板成63o-72o及81o-90o角度區(qū)間內(nèi)半導(dǎo)體器件更容易遭受到干擾效應(yīng);場效應(yīng)管制成的半導(dǎo)體器件比晶體三極管制成的半導(dǎo)體器件更容易遭受干擾;在超高速碰撞產(chǎn)生的綜合效應(yīng)下距離碰撞點越近產(chǎn)生的干擾越大;電磁場對半導(dǎo)體器件的干擾主要發(fā)生在81o-90o角度區(qū)間;超高速碰撞對半導(dǎo)體器件的干擾是有累積效應(yīng)的。
[Abstract]:At present, the collision between space debris and spacecraft is becoming more and more frequent, In the process of finding out the cause, scientists gradually found that the electrically charged particles produced by hypervelocity collision caused no less electromagnetic damage to the spacecraft than the mechanical damage. The electrically charged particles formed during the hypervelocity collision were in the process of moving. The electromagnetic field and the injection of charged particles will interfere with the normal operation of semiconductor devices and even lead to the destruction of semiconductor devices. In this paper, the aluminum projectile with a radius of 6.4 mm is used to simulate the impact of debris in space on the spacecraft by hitting the aluminum target with a hypervelocity of 6.4mm radius. The main contents of this study are as follows: 1) the electromagnetic effect in hypervelocity collision is due to the ionization of the material during the hyperimpact of the projectile into the target plate. The charge-distribution characteristics of charged particles directly affect the electromagnetic interference effect on semiconductor devices. In this paper, the charge-distribution characteristics of charged particles produced by hypervelocity collisions are studied. A multi-angle charge collection system is designed to collect the charges generated by hypervelocity collisions under the condition of orthotropic and oblique collisions, so as to infer the charge distribution model of charged particles produced by hypervelocity collisions. The experimental results show that the positive charges generated under hypervelocity orthotropic collision are mainly distributed in the 54o-81o angle region. Under the condition that the hypervelocity collision angle is 45o, the positive charge mainly distributes in the 45o-90o angle region. Based on this, the charge distribution model of charged particles produced by hypervelocity collision is deduced. 2) according to the structure of semiconductor device and the structure of semiconductor device, the charge distribution model of charged particle produced by hypervelocity collision is deduced. The fabrication process combines the charge distribution law of charged particles produced by hypervelocity collision. The interference mechanism of charged particles produced by hypervelocity collision to semiconductor devices is studied. Based on the separation charge of charged particles, the electromagnetic field caused by hypervelocity collision is calculated. The calculation results show that the electromagnetic field generated by hypervelocity collision is sufficient to interfere with the normal operation of semiconductor devices and even cause damage, and the mechanism of interference by charged particles injected into the PN junction of semiconductor devices as well as in dielectric is studied. It is proved by theoretical analysis that charged particles injected into semiconductor devices due to hypervelocity collisions are enough to interfere with normal operation of semiconductor devices. 3) the semiconductor devices are arranged around the target plate for testing. The experimental results show that in the process of hypervelocity collision, In the range of 63o-72o and 81o-90o angle with the target plate, the semiconductor device is more susceptible to interference, and the semiconductor device made of FET is more susceptible to interference than the semiconductor device made by transistor. Under the comprehensive effect of hypervelocity collision, the closer the collision point is, the greater the interference is; the interference of electromagnetic field to semiconductor device mainly occurs in the angle range of 81o-90o; the interference of hypervelocity collision to semiconductor device has cumulative effect.
【學(xué)位授予單位】：北京理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN303

【引證文獻(xiàn)】

相關(guān)會議論文 前1條

1 孫越強;朱光武;王世金;梁金寶;王晶;陶鵬;杜起飛;;半導(dǎo)體器件空間輻射總劑量效應(yīng)[A];中國空間科學(xué)學(xué)會空間探測專業(yè)委員會第十七次學(xué)術(shù)會議論文集[C];2004年

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本文編號：1533481