本文關鍵詞： 時域譜元法 場效應管 瞬態(tài)模擬 電熱特性　出處：《南京理工大學》2015年碩士論文　論文類型：學位論文

【摘要】：半導體器件及其組成的集成電路是電子設備的基本單元。半導體技術的不斷進步,使得電路的集成程度越來越高,促進了集成電路技術的快速發(fā)展,這極大的改進了電子設備的性能,更加滿足人們對科技快速進步的需求。集成電路技術的發(fā)展反過來促進了半導體技術研究的不斷向前。計算機模擬在半導體技術的研究過程中為工程實踐提供了可靠的參考和指導,具有至關重要的作用,因此,研究半導體器件的仿真模擬有著十分重要的現(xiàn)實意義。本文以場效應管為研究對象,詳細介紹了時域譜元法模擬分析場效應管瞬態(tài)電熱特性的過程。主要成果包括以下幾個方面：首先,以硅基金屬-氧化物-半導體場效應管(MOSFET)為例,推導了漂移-擴散模型方程的時域譜元法表達式,耦合求解模型方程,得到了瞬態(tài)信號下MOSFET的電特性；推導了熱傳導方程的時域譜元法表達式,通過求解熱傳導方程,得到了瞬態(tài)信號下MOSFET的熱效應。在此基礎上考慮溫度對如碰撞電離項、遷移率等參量的影響,實現(xiàn)了對MOSFET瞬態(tài)電熱特性的耦合模擬。其次,以砷化鎵(GaAs)金屬-半導體場效應管(MESFET)為例,推導了含肖特基接觸邊界條件的漂移-擴散模型方程的時域譜元法表達式,模擬了瞬態(tài)信號下GraAs MESFET的瞬態(tài)電熱特性；以砷化鎵(GaAs)/硅(Si)金屬-半導體場效應管(MESFET)為例,推導了含熱離子散射邊界條件和肖特基接觸邊界條件的漂移-擴散模型方程的時域譜元法表達式,模擬了瞬態(tài)信號下GaAs/Si MESFET的瞬態(tài)電熱特性。最后,介紹了一種將場效應管模型方程和外電路約束條件聯(lián)合求解的方法,詳細介紹了試探解的選取,模擬了一個N溝道MOSFET共源放大電路的基本特性和MOSFET在電路中正常工作時的瞬態(tài)電熱特性。
[Abstract]:Semiconductor devices and their integrated circuits are the basic units of electronic equipment. With the continuous progress of semiconductor technology, the integration degree of circuits becomes higher and higher, which promotes the rapid development of integrated circuit technology. This has greatly improved the performance of electronic devices, In turn, the development of integrated circuit technology promotes the development of semiconductor technology. Computer simulation provides engineering practice in the research process of semiconductor technology. Reliable reference and guidance, Therefore, it is very important to study the simulation of semiconductor devices. The process of simulating and analyzing the transient electrothermal characteristics of FET by time-domain spectral element method is introduced in detail. The main results include the following aspects: firstly, taking MOSFETs as an example, The expression of time-domain spectral element method for drift-diffusion model equation is derived, and the electrical properties of MOSFET under transient signal are obtained by coupled solution of the model equation, and the expression of time-domain spectral element method for heat conduction equation is derived, and the heat conduction equation is solved by solving the heat conduction equation. The thermal effect of MOSFET under transient signal is obtained. Considering the effect of temperature on parameters such as collision ionization term and mobility, the coupling simulation of transient electrothermal characteristics of MOSFET is realized. Taking GaAs (GaAs) metal-semiconductor field effect tube (MESFET) as an example, the expression of drift-diffusion model equation with Schottky contact boundary condition is derived, and the transient electrothermal characteristics of GraAs MESFET under transient signal are simulated. Taking GaAs GaAs / Si Si) metal-semiconductor field effect tube (MESFET) as an example, the expressions of drift-diffusion model equations containing thermal ion scattering boundary conditions and Schottky contact boundary conditions are derived by time-domain spectral element method. The transient electrothermal characteristics of GaAs/Si MESFET under transient signal are simulated. Finally, a method to solve the FET model equation and external circuit constraints is introduced, and the selection of the trial solution is introduced in detail. The basic characteristics of a N-channel MOSFET common source amplifier and the transient electrothermal characteristics of MOSFET in normal operation are simulated.
【學位授予單位】：南京理工大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN386

【參考文獻】

相關期刊論文 前1條

1 陳堅邦;砷化鎵材料發(fā)展和市場前景[J];稀有金屬;2000年03期

，

本文編號：1532504