本文關(guān)鍵詞： 封裝 活化鉬錳法 金屬化層 玻璃相 活化劑　出處：《山東大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著半導(dǎo)體器件和電子制造業(yè)的發(fā)展,人們對半導(dǎo)體晶體管的性能和可靠性都有了更高的要求,半導(dǎo)體器件的封裝也越來越受到重視。盡管電子封裝技術(shù)及材料整體向小型化、高性能、高可靠性和低成本的方向發(fā)展,但是在部分軍用及航空航天用晶體管的生產(chǎn)中,金屬封裝仍被視為保證器件氣密性的最佳選擇。國內(nèi)生產(chǎn)的金屬管殼,在陶瓷絕緣子和引線的封接處容易出現(xiàn)氣密性問題,影響了晶體管封裝的可靠性。因此,研究和設(shè)計(jì)金屬化配方及燒結(jié)工藝,制備出致密、封接性能好的金屬化層,改善氧化鋁陶瓷金屬化工藝,對于國內(nèi)半導(dǎo)體封裝產(chǎn)業(yè)的發(fā)展具有很大意義。本課題利用活化鉬錳法在氧化鋁陶瓷上制備金屬化層,并對金屬化層的相組成、微觀組織、結(jié)合界面、抗拉強(qiáng)度等性能進(jìn)行研究,通過改變鉬粉配比,確定金屬化膏劑的基本體系,并對其燒結(jié)工藝進(jìn)行優(yōu)化。通過添加活化劑氧化物BaO和ZrO2,研究活化劑添加量對金屬化層性能的影響,并對其活化機(jī)理進(jìn)行分析。試驗(yàn)結(jié)果表明,玻璃粉中SiO2、MnO和Al2O3的質(zhì)量比為50：35：15時(shí),高溫?zé)Y(jié)時(shí)可以生成較好的玻璃相,不會析出MnAl2O4、Mn2Si04和MnSiO3等晶體。金屬化層的性能與膏劑配方和燒結(jié)溫度有關(guān),鉬粉含量為75 wt.%、燒結(jié)溫度為1400℃下制備的金屬化層性能最好,抗拉強(qiáng)度可以達(dá)到106MPa。配方中鉬粉含量過低時(shí),金屬化層中含有過多的玻璃相,影響焊料對金屬化層的鋪展?jié)櫇?金屬化層的抗拉強(qiáng)度下降,鉬粉含量過高時(shí),玻璃相形成和遷移的太少,金屬化層中存在較多氣孔而不致密,也會降低封接后抗拉強(qiáng)度；提高燒結(jié)溫度可以促進(jìn)玻璃相的形成和遷移,制備出更致密的金屬化層,陶瓷和金屬化層的結(jié)合也更緊密,金屬化層的抗拉強(qiáng)度較高,但燒結(jié)溫度過高時(shí),過多的玻璃相遷移到表面并影響焊料的鋪展?jié)櫇?金屬化層的抗拉強(qiáng)度降低。金屬化配方中加入BaO和ZrO2都具有改善金屬化層性能的作用,在M3配方中添加BaO的量為1.5wt.%時(shí),活化效果最好,金屬化層的抗拉強(qiáng)度可以達(dá)到138MPa; ZrO2的添加量為0.5wt.%時(shí)效果最好,金屬化層的抗拉強(qiáng)度達(dá)到了121MPa。但二者的活化機(jī)制是有區(qū)別的,BaO是通過降低金屬化層中玻璃相的黏度,促進(jìn)玻璃相在陶瓷和金屬化層中互相擴(kuò)散遷移,來達(dá)到改善金屬化層性能的目的,添加量較少時(shí),制備出的金屬化層更加致密,陶瓷和金屬化層結(jié)合的更緊密,金屬化層的抗拉強(qiáng)度提高,添加量過多時(shí),金屬化層中過多的玻璃相不利于焊料的鋪展?jié)櫇?降低封接后的抗拉強(qiáng)度；ZrO2則是通過提高玻璃相的強(qiáng)度來改善金屬化層的性能,提高金屬化層的抗拉強(qiáng)度,但添加量過多時(shí)會影響玻璃相對陶瓷的浸潤,并抑制陶瓷和金屬化層中玻璃相的互相擴(kuò)散遷移,制備出的金屬化層致密性較差,與陶瓷之間的滲透結(jié)合不充分,抗拉強(qiáng)度降低。不同的活化劑需要根據(jù)它們的作用機(jī)理,合理選擇添加量。
[Abstract]:With the development of semiconductor devices and electronic manufacturing, people have higher requirements for the performance and reliability of semiconductor transistors, and more and more attention has been paid to the packaging of semiconductor devices. High performance, high reliability and low cost development, but in the production of some military and aerospace transistors, metal packaging is still regarded as the best choice to ensure the airtightness of devices. The sealing of ceramic insulators and leads is prone to the problem of airtightness, which affects the reliability of transistor packaging. Therefore, the metallization formulation and sintering process are studied and designed to prepare a dense metallized layer with good sealing performance. Improving the metallization process of alumina ceramics is of great significance to the development of semiconductor packaging industry in China. In this paper, the metallized layer is prepared on alumina ceramics by activated molybdenum manganese method, and the phase composition and microstructure of the metallized layer are also studied. Combined with the properties of interface and tensile strength, the basic system of metallized paste was determined by changing the proportion of molybdenum powder. The effects of the amount of activator on the properties of metallized layer were studied by adding activator oxide BaO and ZrO _ 2, and the activation mechanism was analyzed. When the mass ratio of Sio _ 2 and Al2O3 in glass powder is 50: 35: 15, better glass phase can be formed when sintering at high temperature, and MnAl _ 2O _ 4, mn _ 2Si _ 4 and MnSiO3 crystals will not precipitate. The properties of metallized layer are related to paste formulation and sintering temperature. The metallized layer prepared at the sintering temperature of 1400 鈩，

本文編號：1529696