本文關(guān)鍵詞： 多孔硅柱狀陣列 硅基氧化鋅復(fù)合材料 錳摻雜 發(fā)光機(jī)制 顯色指數(shù)　出處：《北京化工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：硅是重要的半導(dǎo)體材料,在當(dāng)今的科技生產(chǎn)中占據(jù)著重要地位,是集成電路等制造中不可或缺的材料,被廣泛應(yīng)用在計(jì)算機(jī)、信息通訊、國(guó)防科技等生產(chǎn)生活領(lǐng)域,保證并改善著我們的生活質(zhì)量。多孔硅的強(qiáng)光致發(fā)光現(xiàn)象,開(kāi)啟了硅在光電領(lǐng)域的應(yīng)用,引起了各國(guó)的關(guān)注,為光電材料與現(xiàn)代技術(shù)相結(jié)合提供了廣闊誘人的前景。氧化鋅是一種十分具有潛力的半導(dǎo)體材料,有優(yōu)異的穩(wěn)定性、高效的發(fā)光性能和光電轉(zhuǎn)換性能,在多個(gè)領(lǐng)域范圍內(nèi)得到了廣泛應(yīng)用�，F(xiàn)有成熟的生產(chǎn)工藝可精確控制氧化鋅材料的尺寸與形貌,當(dāng)氧化鋅材料的尺寸在納米量級(jí)時(shí)其發(fā)光性能尤為顯著,是一種優(yōu)秀的納米發(fā)光材料。氧化鋅與多孔硅相結(jié)合,產(chǎn)生硅基氧化鋅復(fù)合材料,集成了兩種半導(dǎo)體材料的特點(diǎn),具有優(yōu)秀的光學(xué)性能、電學(xué)性能和高效的光電轉(zhuǎn)化性能。本論文針對(duì)硅基氧化鋅材料的制備和性能,對(duì)其基底多孔硅柱狀陣列材料(porous silicon pillar array:PSPA)、硅基氧化鋅復(fù)合材料及其摻雜改性材料進(jìn)行了結(jié)構(gòu)分析、性能測(cè)試等方面進(jìn)行了研究與討論,主要內(nèi)容和結(jié)果有以下幾個(gè)方面：利用有鐵離子參與的水熱腐蝕法制備PSPA。拋光硅晶片表面被腐蝕出微米量級(jí)峰柱狀陣列結(jié)構(gòu),每個(gè)柱狀在納米量級(jí)都由硅量子點(diǎn)及表面不均勻氧化層包裹構(gòu)成的海綿狀結(jié)構(gòu)組成,及PSPA進(jìn)行形貌結(jié)構(gòu)、元素組成、發(fā)光特性和激發(fā)特性等的表征與分析。以PSPA為襯底,用液相法制備硅基氧化鋅復(fù)合材料。PSPA特殊的表面結(jié)構(gòu)可以減小兩種半導(dǎo)體材料晶格失配帶來(lái)的界面應(yīng)力,使氧化鋅納米材料層均勻生長(zhǎng)在PSPA材料表面,呈周期性陣列結(jié)構(gòu),提高了復(fù)合材料的發(fā)光效率。本文分析了復(fù)合材料的結(jié)構(gòu)與發(fā)光性能等并結(jié)合能帶理論解釋其光致發(fā)光機(jī)制。利用錳離子摻雜提高硅基氧化鋅材料的發(fā)光性能及顯色指數(shù)。硅基氧化鋅材料的發(fā)光主要來(lái)源于氧化鋅納米材料層,其發(fā)光顯色偏藍(lán)綠,通過(guò)錳離子摻雜為硅基氧化鋅復(fù)合發(fā)光提供了新的發(fā)光中心與發(fā)光能級(jí),使硅基氧化鋅摻雜材料的發(fā)光更接近自然光,為未來(lái)光源的發(fā)展提供更多可能。
[Abstract]:Silicon is an important semiconductor material, occupies an important position in the current scientific and technological production, is an indispensable material in the manufacture of integrated circuits, and has been widely used in the fields of computer, information communication, national defense science and technology and other fields of production and life. Ensure and improve our quality of life. The phenomenon of strong photoluminescence in porous silicon has opened up the application of silicon in the field of photoelectricity, which has attracted the attention of all countries. Zinc oxide is a potential semiconductor material with excellent stability, high luminescence and optoelectronic conversion performance. It has been widely used in many fields. The existing mature production process can accurately control the size and morphology of zinc oxide material, especially when the size of zinc oxide material is in nanometer order of magnitude. Zinc oxide combines with porous silicon to produce silicon-based zinc oxide composite, which integrates the characteristics of two kinds of semiconductor materials and has excellent optical properties. In this paper, the preparation and properties of silicon based zinc oxide materials were studied. The structure of porous silicon pillar array-PSPA, Si-based zinc oxide composites and their doped modified materials were analyzed. The main contents and results are as follows: PSPAs were prepared by hydrothermal etching with iron ions. The surface of polished silicon wafer was corroded into micron scale columnar array structure. Each columnar in nanometer order is composed of silicon quantum dots and spongy structure encapsulated by non-uniform oxide layer on the surface, and PSPA is used to characterize and analyze the morphology, elemental composition, luminescence characteristics and excitation characteristics. PSPA is used as the substrate. The special surface structure of silicon based zinc oxide composite 路PSPA prepared by liquid phase method can reduce the interfacial stress caused by lattice mismatch of two kinds of semiconductor materials and make the ZnO nanomaterial layer grow uniformly on the surface of PSPA material with periodic array structure. In this paper, the structure and luminescence properties of the composites are analyzed, and the photoluminescence mechanism is explained by the energy band theory. The luminescence properties of silicon based zinc oxide materials are improved by doping manganese ions. The luminescence of silicon-based zinc oxide material mainly comes from the zinc oxide nanomaterial layer. The luminescence of zinc oxide doped with manganese ions provides a new luminescence center and luminescent energy level, which makes the luminescence of silicon based zinc oxide doped material closer to natural light, and provides more possibilities for the future development of light source.
【學(xué)位授予單位】：北京化工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.2;TB383.1

【共引文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前5條

1 戰(zhàn)光輝;鋁摻雜氧化鋅粉體的制備及其電性能研究[D];華南理工大學(xué);2013年

2 程沖;三維有序大孔SiO_2微球的制備及表征[D];中國(guó)工程物理研究院;2013年

3 郭婧;水熱法制備氧化鋅及其導(dǎo)電性能研究[D];天津大學(xué);2012年

4 呂玉婷;ZnO:Al薄膜的濕化學(xué)法制備與取向生長(zhǎng)研究[D];浙江大學(xué);2014年

5 張萍;零維和一維納米導(dǎo)電材料的制備、表征及應(yīng)用[D];蘇州大學(xué);2014年

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本文編號(hào)：1507104