本文關(guān)鍵詞： 超高頻RFID 低功耗 電荷泵 亞閾值 LDO　出處：《華中科技大學》2015年碩士論文　論文類型：學位論文

【摘要】：RFID(Radio Frequency Identification)技術(shù),是一種非接觸式的自動識別技術(shù),它利用射頻信號的電感耦合或者電磁反向散射機制實現(xiàn)對物體的自動識別并獲取其數(shù)據(jù)信息。本論文針對無源超高頻RFID標簽芯片具體應用需求,對其物理基礎、能量鏈路、系統(tǒng)架構(gòu)、性能指標和電源產(chǎn)生電路進行了詳細的研究。無源超高頻RFID標簽芯片電源產(chǎn)生電路主要包括以下幾個模塊:整流電路模塊、基準電流源模塊、基準電壓源模塊和穩(wěn)壓電路模塊。本文整理了整流電路幾種電路結(jié)構(gòu),并針對Dickson電荷泵倍壓整流電路做了詳細的原理分析,給出了基于閾值電壓補償技術(shù)的電路設計方案。針對低功耗低成本的電路設計需求,采用亞閾值技術(shù)實現(xiàn)基準電流源和基準電壓源的電路設計。穩(wěn)壓電路采用傳統(tǒng)的LDO結(jié)構(gòu),在滿足系統(tǒng)需求的前提下實現(xiàn)了低功耗設計要求。由于當標簽芯片工作在近距離時,標簽天線接收到的能量很大,給出了過壓保護電路設計方案,避免了近距離工作時后級電路被擊穿。本文基于UMC 0.18μm Embedded E2PROM 1.8 V/5 V 2P6M LLP工藝,完成了電源產(chǎn)生電路的設計。整流電路采用基于二極管連接的MOS管主從電荷泵結(jié)構(gòu)。在-5.2 dBm的輸入功率下,實現(xiàn)了22.69%的能量轉(zhuǎn)換效率。基準電壓源電路采用全MOS管電路結(jié)構(gòu),實現(xiàn)了640 mV的電壓輸出,溫度系數(shù)達到16.82 ppm/℃,當輸入電壓VCC為1.8 V時,功耗低至194 nA。基準電流源采用亞閾值技術(shù)進行設計,實現(xiàn)了99.7 nA的電流輸出,溫度系數(shù)為48.45 ppm/℃,當輸入電壓VCC為1.8 V時,功耗低至431.4 nA。穩(wěn)壓電路輸出1.8 V的直流電壓,當輸入電壓VCC為2 V時,功耗為3μA,滿足低功耗的設計需求。過壓保護電路實現(xiàn)了在12.2 dBm的輸入功率下,將電荷泵輸出電壓鉗位在3.3 V,性能良好。
[Abstract]:RFID(Radio Frequency Identification is a non-contact automatic identification technology. It uses inductive coupling of radio frequency signal or electromagnetic backscattering mechanism to realize automatic recognition of objects and obtain data information. This paper aims at the specific application requirements of passive UHF RFID tag chip and its physical foundation and energy link. The system architecture, performance index and power generation circuit are studied in detail. The passive UHF RFID tag chip power generation circuit mainly includes the following modules: rectifier circuit module, reference current source module, Reference voltage source module and voltage stabilizing circuit module. In this paper, several circuit structures of rectifier circuit are arranged, and the principle of Dickson charge pump double voltage rectifier circuit is analyzed in detail. The circuit design scheme based on threshold voltage compensation technology is presented. The sub-threshold technique is adopted to realize the circuit design of the reference current source and the reference voltage source, and the voltage stabilizing circuit adopts the traditional LDO structure, aiming at the low power consumption and low cost circuit design requirements, the sub-threshold technology is used to realize the circuit design of the reference current source and the reference voltage source. In order to meet the requirements of the system, the design of low power consumption is realized. Because the tag antenna receives a lot of energy when the tag chip is working at close range, the design scheme of over-voltage protection circuit is given. This paper is based on UMC 0.18 渭 m Embedded E2PROM 1.8 V / 5 V 2P6M LLP process. The design of power generation circuit is completed. The rectifier circuit adopts the structure of MOS transistor master and slave charge pump based on diode connection. Under the input power of -5.2 dBm, the energy conversion efficiency of 22.69% is realized. The reference voltage source circuit adopts the full MOS circuit structure. The output voltage of 640mV is realized, the temperature coefficient reaches 16.82 ppmC. When the input voltage VCC is 1.8V, the power consumption is as low as 194nA. the reference current source is designed by sub-threshold technique, and the current output of 99.7nA is realized. The temperature coefficient is 48.45ppm / 鈩，

本文編號：1504762