本文關(guān)鍵詞： 硅襯底 GaN 應(yīng)力 XRD Ag-In　出處：《發(fā)光學(xué)報(bào)》2016年08期 　論文類型：期刊論文

【摘要】：將Si襯底GaN基LED外延薄膜經(jīng)晶圓鍵合、去硅襯底等工藝制作成垂直結(jié)構(gòu)GaN基LED薄膜芯片,并對其進(jìn)行不同溫度的連續(xù)退火,通過高分辨X射線衍射(HRXRD)研究了連續(xù)退火過程中GaN薄膜芯片的應(yīng)力變化。研究發(fā)現(xiàn):垂直結(jié)構(gòu)LED薄膜芯片在160~180℃下退火應(yīng)力釋放明顯,200℃時(shí)應(yīng)力釋放充分,GaN的晶格常數(shù)接近標(biāo)準(zhǔn)值。繼續(xù)升溫應(yīng)力不再發(fā)生明顯變化,GaN薄膜的晶格常數(shù)只在標(biāo)準(zhǔn)晶格常數(shù)值附近波動。掃描電子顯微鏡給出的bonding層中Ag-In合金情況很好地解釋了薄膜芯片應(yīng)力的變化。
[Abstract]:GaN based LED epitaxial films on Si substrates were fabricated by wafer bonding and desilicon substrates to fabricate GaN based LED thin film chips with vertical structure and continuous annealing at different temperatures. The stress changes of GaN thin film chip during continuous annealing were studied by high resolution X-ray diffraction (HRXRD). It was found that the stress release of vertical structure LED thin film chip at 160 ~ 180 鈩，

本文編號：1498734