本文關(guān)鍵詞： 浮空場環(huán) 高耐壓 場環(huán)優(yōu)化 場環(huán)間距　出處：《電子技術(shù)應(yīng)用》2017年01期 　論文類型：期刊論文

【摘要】：主要研究晶體管中浮空場環(huán)的技術(shù)原理和設(shè)計優(yōu)化及其在實際應(yīng)用中對晶體管耐壓性能的影響。在實際產(chǎn)品版圖設(shè)計中采用了浮空場環(huán)設(shè)計并通過優(yōu)化場環(huán)間距來滿足晶體管的高耐壓要求,并通過Silvaco軟件進行工藝和器件仿真。根據(jù)仿真結(jié)果及理論計算進行浮空場環(huán)優(yōu)化設(shè)計,并通過實際流片驗證浮空場環(huán)對晶體管耐壓性能的提高效果。
[Abstract]:This paper mainly studies the technical principle and design optimization of floating field ring in transistors and its influence on transistor voltage performance in practical application. The floating field ring design is adopted in the layout design of practical products and the field ring spacing is optimized by means of optimization of field ring spacing. To meet the high voltage requirements of transistors, According to the simulation results and theoretical calculation, the optimization design of floating field ring is carried out, and the improvement effect of floating field ring on transistor voltage performance is verified by actual flow sheet.
【作者單位】： 航天科技集團九院七七一研究所;
【分類號】：TN32
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本文編號：1496965