本文關(guān)鍵詞： 浮空?qǐng)霏h(huán) 高耐壓 場(chǎng)環(huán)優(yōu)化 場(chǎng)環(huán)間距　出處：《電子技術(shù)應(yīng)用》2017年01期 　論文類(lèi)型：期刊論文

【摘要】：主要研究晶體管中浮空?qǐng)霏h(huán)的技術(shù)原理和設(shè)計(jì)優(yōu)化及其在實(shí)際應(yīng)用中對(duì)晶體管耐壓性能的影響。在實(shí)際產(chǎn)品版圖設(shè)計(jì)中采用了浮空?qǐng)霏h(huán)設(shè)計(jì)并通過(guò)優(yōu)化場(chǎng)環(huán)間距來(lái)滿足晶體管的高耐壓要求,并通過(guò)Silvaco軟件進(jìn)行工藝和器件仿真。根據(jù)仿真結(jié)果及理論計(jì)算進(jìn)行浮空?qǐng)霏h(huán)優(yōu)化設(shè)計(jì),并通過(guò)實(shí)際流片驗(yàn)證浮空?qǐng)霏h(huán)對(duì)晶體管耐壓性能的提高效果。
[Abstract]:This paper mainly studies the technical principle and design optimization of floating field ring in transistors and its influence on transistor voltage performance in practical application. The floating field ring design is adopted in the layout design of practical products and the field ring spacing is optimized by means of optimization of field ring spacing. To meet the high voltage requirements of transistors, According to the simulation results and theoretical calculation, the optimization design of floating field ring is carried out, and the improvement effect of floating field ring on transistor voltage performance is verified by actual flow sheet.
【作者單位】： 航天科技集團(tuán)九院七七一研究所;
【分類(lèi)號(hào)】：TN32
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本文編號(hào)：1496965