本文關(guān)鍵詞： 場效應晶體管 玻璃纖維 CuPc微納單晶 紅熒烯微納單晶 柔性器件 應變傳感器　出處：《東北師范大學》2017年碩士論文　論文類型：學位論文

【摘要】：有機單晶具有完美的晶體結(jié)構(gòu),具有比有機薄膜更少的晶界和缺陷,通常用于研究半導體材料的本征性質(zhì)和制備高性能的光電器件。十幾年來,文獻中已經(jīng)報道的有機單晶場效應晶體管的制備方法由于不能夠?qū)崿F(xiàn)器件的大規(guī)模和高效率制備,在一定程度上限制了相關(guān)課題的研究進程。此外,基于有機電子構(gòu)筑的柔性應變傳感器因具有廣闊的應用前景而受到廣泛關(guān)注,但是尚沒有文獻系統(tǒng)地研究柔性有機微納單晶場效應晶體管的性能與應變之間的關(guān)系和探究其在應變傳感器中的潛在應用。針對以上兩個問題,本論文首先提出一種新的器件制備方法,即利用玻璃纖維作為掩膜,最終實現(xiàn)了器件的大規(guī)模和高效制備,并基于超薄、柔性的紅熒烯微納單晶,構(gòu)筑了“柔性可外接測試”的場效應晶體管器件,研究了應變對場效應性能的影響,探究了其在應變傳感器中的應用。主要包括以下內(nèi)容:1.利用物理氣相輸運的方法得到了CuPc和紅熒烯微納單晶,并對其進行了晶體結(jié)構(gòu)和表面形貌的表征�；贑uPc微納單晶,提出了一種大規(guī)模、高效率制備有機微納單晶場效應晶體管的方法——“玻璃纖維掩膜法”。主要利用玻璃纖維質(zhì)輕、易吸附于絕緣層襯底表面而不脫落的特點,將其作為掩膜可以一次性在同一襯底上獲得15個器件。測試結(jié)果表明,所有的器件均具有場效應性能,其中遷移率最高為0.7 cm2V-1s-1。利用改進后的“玻璃纖維掩膜法”,基于紅熒烯微納單晶,制備了晶體管陣列,研究了半導體層的厚度對器件性能的影響。2.基于紅熒烯微納單晶,提出了一種構(gòu)筑“柔性可外接測試”場效應晶體管的方法,并實現(xiàn)了外接測試。結(jié)果表明,所制備的柔性器件具有高遷移率、高穩(wěn)定性,且不存在磁滯現(xiàn)象。進而,研究了在不同應變條件下場效應性能的變化規(guī)律。靜態(tài)彎曲測試的結(jié)果顯示,柔性器件在受到壓縮應變時遷移率增大,受到拉伸應變時遷移率減小。動態(tài)彎曲測試的結(jié)果表明,柔性器件對于拉伸應變有較好的響應。在拉伸應變?yōu)?0.1%到-0.2%的范圍內(nèi),響應的靈敏度高達123,響應和恢復時間分別為0.9 s和1 s�？傊�,柔性有機微納單晶場效應晶體管可以應用于小應變的高靈敏監(jiān)測,顯示了其在應變傳感器中的應用前景。
[Abstract]:Organic single crystals have perfect crystal structure, less grain boundaries and defects than organic thin films. They are usually used to study the intrinsic properties of semiconductor materials and to fabricate high performance optoelectronic devices. The methods of fabricating organic single crystal field-effect transistors which have been reported in the literature have limited the research progress to some extent due to their inability to achieve large-scale and high-efficiency fabrication of devices. Flexible strain sensors based on organic electronics have attracted wide attention due to their wide application prospects. However, there is no literature to systematically study the relationship between the performance and strain of flexible organic micro-nanocrystalline FET and to explore its potential application in strain sensors. In this thesis, a new fabrication method is proposed, that is, glass fiber is used as the mask to achieve the large scale and high efficiency fabrication of the device, and it is based on the ultra-thin and flexible red fluorene micronanocrystalline crystal. A field effect transistor (FET) device with "flexible external test" is constructed, and the effect of strain on the performance of FET is studied. Its application in strain sensors is explored. The main contents are as follows: 1. CuPc and red fluorene micronanocrystals are obtained by physical vapor transport. The crystal structure and surface morphology were characterized. Based on the CuPc micronanocrystalline, a large scale was proposed. The method of preparing organic micro-nano single crystal field-effect transistor with high efficiency is "glass fiber mask method", which mainly uses the characteristics of light glass fiber, easy to adsorb on the surface of insulating layer without falling off. Using it as a mask, 15 devices can be obtained on the same substrate at one time. The test results show that all the devices have field effect performance. The maximum mobility is 0.7 cm2V-1s-1.The transistor array is fabricated by using the improved glass fiber mask method based on the red fluorene micronanocrystalline crystal. The influence of the thickness of semiconductor layer on the performance of the device is studied. 2. Based on the red fluorene micronanocrystalline crystal, a method of constructing the "flexible external testable" field-effect transistor is proposed. The results show that the flexible devices have high mobility, high stability and no hysteresis. The experimental results of static bending show that the mobility of flexible devices increases under compression strain. The results of dynamic bending test show that the flexible device has a good response to the tensile strain in the range of -0.1% to -0.2%. The response sensitivity is as high as 123, and the response and recovery times are 0.9 s and 1 s respectively. In a word, flexible organic micro and nano single crystal field effect transistors can be used for high sensitivity monitoring of small strain. The prospect of its application in strain sensor is shown.
【學位授予單位】：東北師范大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN386;TP212

【參考文獻】

相關(guān)期刊論文 前1條

1 Qin-Fen Li;Shuang Liu;Hong-Zheng Chen;Han-Ying Li;;Alignment and patterning of organic single crystals for field-effect transistors[J];Chinese Chemical Letters;2016年08期

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本文編號：1492926