本文關(guān)鍵詞： YZO YIZO 透明導(dǎo)電薄膜 薄膜晶體管 磁控濺射法　出處：《山東大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：氧化鋅(ZnO, Zinc oxide)是一種新型的Ⅱ-Ⅵ族寬帶隙半導(dǎo)體材料,禁帶寬度為3.37eV,室溫下的激子束縛能為60meV。以ZnO為基底摻入稀土金屬釔(Y, yttrium)可以使薄膜材料帶隙展寬,光透過率提高,電阻率降低,紫外輻射增強。國內(nèi)外有關(guān)YZO的研究起步較早但進(jìn)展緩慢,目前還處于實驗室研究階段,尚未見有關(guān)其在商業(yè)應(yīng)用中的報道,這說明Y摻雜ZnO薄膜的結(jié)構(gòu)和光電特性還不能滿足實際應(yīng)用的需要。因此,尋找薄膜的最佳制備條件,進(jìn)一步優(yōu)化薄膜特性,對其在太陽能電池、薄膜晶體管等光電器件領(lǐng)域的應(yīng)用具有重大意義。針對ZnO的Y摻雜,本論文共研究了兩種材料,即：Y摻雜ZnO (YZO)和釔銦(In, Indium)共摻雜ZnO (YIZO)。1.YZO透明導(dǎo)電薄膜本論文采用射頻磁控濺射法,室溫下在鈉鈣玻璃襯底上制備了YZO透明導(dǎo)電薄膜。通過改變?yōu)R射時間,濺射功率,濺射氣壓等制備條件,研究了不同生長條件對薄膜結(jié)構(gòu)、形貌、光學(xué)和電學(xué)特性的影響。主要研究內(nèi)容及結(jié)論如下：(1)研究了薄膜厚度(濺射時間)對YZO薄膜結(jié)構(gòu)、形貌和光電特性的影響。薄膜厚度分別為0.98μm、1.70μm、2.04μm和2.52μm,分別對應(yīng)濺射時間30min、40min、50min和60min。通過對薄膜進(jìn)行XRD、AFM、紫外-可見光分光光度及霍爾效應(yīng)的測試和數(shù)據(jù)分析,發(fā)現(xiàn)所有薄膜均為六角纖鋅礦型結(jié)構(gòu)。隨著薄膜厚度的增加晶粒尺寸逐漸增大；薄膜在可見光區(qū)的平均透過率均超過80%；光學(xué)帶隙由3.270eV逐漸減小至3.225eV；薄膜電阻率先減小后增大。薄膜厚度為1.70μm時電阻率最低,其值為8.13×10-3Ω·cm。(2)研究了濺射功率對YZO薄膜結(jié)構(gòu)、形貌和光電特性的影響。濺射功率分別80W,100W,120W和140W。通過對薄膜進(jìn)行XRD、AFM、紫外-可見光分光光度及霍爾效應(yīng)的測試和數(shù)據(jù)分析,發(fā)現(xiàn)所有薄膜均為六角纖鋅礦型結(jié)構(gòu)。隨著濺射功率的增加,晶粒尺寸先增大后減��；可見光區(qū)平均透過率超過80%,帶隙逐漸增大,分別為3.24 eV、3.26 eV、3.27 eV和3.28 eV,帶隙的變化可以用Burstein-Moss效應(yīng)來解釋；電阻率先減小后增大,濺射功率為100W時薄膜電阻率最低,其值為9.01×10-4Ω·cm。(3)研究了濺射氣壓對YZO薄膜結(jié)構(gòu)和光電特性的影響。濺射氣壓分別1.0Pa,1.4Pa和1.8Pa。通過對薄膜進(jìn)行XRD、AFM、紫外-可見光分光光度及霍爾效應(yīng)的測試和數(shù)據(jù)分析,發(fā)現(xiàn)所有薄膜均為六角纖鋅礦型結(jié)構(gòu)。隨著濺射氣壓的增加,衍射峰半高寬增大,相應(yīng)的晶粒尺寸減小,薄膜結(jié)晶質(zhì)量變差；帶隙略有增大,可以用Burstein-Moss效應(yīng)來解釋；電阻率顯著增加,1.0Pa時獲得最低電阻率1.503×10-3 Q·cm,帶隙為3.26 eV。2. YIZO透明導(dǎo)電薄膜和TFT(1)采用磁控濺射法制備了YIZO透明導(dǎo)電薄膜,重點分析比較了不同厚度YIZO薄膜的結(jié)構(gòu)、形貌和光電特性的差異。研究發(fā)現(xiàn),室溫下制備的所有YIZO薄膜均為非晶結(jié)構(gòu),可見光區(qū)的平均透過率均超過83%。薄膜厚度對帶隙影響不大,所有薄膜帶隙均為4.18eV。(2)在薄膜研究的基礎(chǔ)上,以重?fù)诫s的P型硅為柵電極,以YIZO薄膜為有源層,以金屬鋁為源漏電極,制備了底柵頂接觸結(jié)構(gòu)的YIZO薄膜晶體管(YIZOTFT),并研究了不同有源層厚度對器件的輸出和轉(zhuǎn)移特性的影響。(3)所有YIZO TFT均為n溝道耗盡型器件,所有樣品都表現(xiàn)出了良好的夾斷特性。隨著YIZO層厚度的增加,器件的閾值電壓逐漸向負(fù)電壓方向漂移,遷移率和開關(guān)電流比均迅速減小,亞閾值擺幅逐漸增大,器件性能變差。有源層厚度為20nm的器件的開關(guān)電流比超過105,亞閾值擺幅為2.20 V/decade,閾值電壓為-1.0V飽和遷移率為0.57 cm2/V·s。
[Abstract]:Zinc Oxide (ZnO Zinc oxide) is a new type of II-VI wide band gap semiconductor material, the band gap is 3.37eV at room temperature, the exciton binding energy of 60meV. with ZnO as substrate is doped with rare earth yttrium metal (Y, yttrium) can make the film band gap broadening, the transmittance is improved, the decrease of resistivity and enhanced UV-B radiation. The domestic and foreign research on YZO started earlier but slow progress is still in the stage of laboratory research, has not yet been reported in the relevant business applications, the structure and properties of Y doped ZnO thin films can not satisfy the need of practical application. Therefore, the optimum preparation conditions for thin films. To further optimize the thin film properties, the solar cell has the significance of the application of thin film transistor devices. For ZnO doped Y, this thesis studies two kinds of materials, namely: Y doped ZnO (YZO) and yttrium indium (In, Indi UM) ZnO (YIZO) Co doped.1.YZO transparent conductive film by the RF magnetron sputtering, YZO transparent conductive films were prepared at room temperature in the sodium calcium glass substrates. By changing the sputtering time, sputtering power, sputtering pressure and other preparation conditions, studied the morphology of different growth conditions on film structure, optical effect and the electrical properties. The main research contents and conclusions are as follows: (1) the study of film thickness (the deposition time) on YZO thin film structure, morphology and photoelectric properties. The film thickness is 0.98 m, 1.70 m, 2.04 m and 2.52 m, respectively, corresponding to 30min 40min 50min, the sputtering time. Through XRD and 60min., on AFM film, visible spectrophotometry and Holzer effect test and data analysis of UV, found that all films were all six corners of the wurtzite structure. With the increase in film thickness the average grain size increases; thin film in the visible light region. The average transmittance of more than 80%; the optical band gap decreases from 3.270eV to 3.225eV; the thin film resistor first decreases and then increases. The film thickness is 1.70 m when the lowest resistivity, its value is 8.13 x 10-3. Cm. (2) of the sputtering power on YZO thin film structure, morphology and optical properties of the influence of sputtering power. 80W, 100W, 120W and 140W. by XRD on AFM film, visible spectrophotometry and Holzer effect test and data analysis of UV, found that all films were all six corners of the wurtzite structure. With the increase of sputtering power, the grain size increases first and then decreases; average visible transmittance more than 80%, the band gap increases, respectively 3.24 eV, 3.26 eV, 3.27 eV and 3.28 eV, the change of the band gap can be used to explain the Burstein-Moss effect; resistance first decreases and then increases, the sputtering power of 100W thin film resistivity minimum, its value is 9.01 * 10-4. Cm. . (3) studied the effects of sputtering pressure on the structure and photoelectric properties of YZO films. The sputtering pressure were 1.0Pa, 1.4Pa and 1.8Pa. by XRD on AFM film, visible spectrophotometry and Holzer effect test and data analysis of UV, found that all films were all six corners of the wurtzite structure. With the increase of sputtering pressure, the diffraction peak width increases, the grain size decrease, the crystal quality of the films became worse; the band gap increases slightly, can be used to explain the Burstein-Moss effect; resistivity increased significantly, 1.0Pa get the lowest resistivity 1.503 * 10-3 Q cm 3.26 eV.2. band gap of YIZO films and TFT (1) YIZO transparent conductive thin films prepared by magnetron sputtering method, based on the analysis of the structure of YIZO films with different thickness, different morphology and photoelectric properties. The study found that, at room temperature for all the YIZO films are amorphous structure, visible The region average transmittance of more than 83%. film thickness has little influence on the band gap, the band gap of all the films are 4.18eV. (2) on the basis of film studies, P type heavily doped silicon as the gate electrode with YIZO film as the active layer, based on aluminum source drain electrode, preparation of the bottom gate the top of the YIZO thin film transistor contact structure (YIZOTFT), and the effects of different active layer thickness on the device output and transfer characteristics were studied. (3) all YIZO TFT are N channel depletion mode devices, all the samples showed good pinch off characteristics. With the increase of the thickness of YIZO, threshold voltage the device gradually to the negative direction of voltage drift mobility and on-off current ratio were decreased rapidly, the subthreshold swing increases gradually and the performance of the device gets worse. The thickness of the active layer of 20nm device switch current is more than 105, sub threshold swing is 2.20 V/decade, the threshold voltage for -1.0V saturation transfer The rate is 0.57 cm2/V. S.

【學(xué)位授予單位】：山東大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN304.25

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