本文關(guān)鍵詞： 多孔磷化銦 三維有序納米陣列 徑向多孔結(jié)構(gòu)簇 雙光束雙曝光　出處：《長(zhǎng)春理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：本文主要介紹了電化學(xué)振蕩的可調(diào)控性及其在三維有序納米陣列結(jié)構(gòu)制備中的應(yīng)用�；诳烧{(diào)控電化學(xué)振蕩以及電化學(xué)振蕩與三維結(jié)構(gòu)存在密切的對(duì)應(yīng)關(guān)系,制備了InP三維有序陣列結(jié)構(gòu)材料。通過施加干擾調(diào)控電化學(xué)振蕩行為,探索InP三維有序陣列結(jié)構(gòu)內(nèi)部的缺陷設(shè)計(jì)和制備。利用雙光束雙曝光制備掩膜,實(shí)現(xiàn)誘導(dǎo)電化學(xué)刻蝕InP制備多孔結(jié)構(gòu)并去除不規(guī)則多孔結(jié)構(gòu)。分析了雙光束雙曝光得到的掩膜特征尺寸和周期對(duì)電化學(xué)刻蝕InP多孔結(jié)構(gòu)形貌的影響。分析電化學(xué)刻蝕InP過程中出現(xiàn)的徑向多孔結(jié)構(gòu)簇的形成原因,并利用空間電荷層理論分析孔壁的成因。
[Abstract]:In this paper, the controllability of electrochemical oscillation and its application in the preparation of three-dimensional ordered nanoarrays are introduced. Based on the close relationship between the three dimensional structure and the controllable electrochemical oscillation and electrochemical oscillation. InP three-dimensional ordered array structure materials were prepared. The defect design and fabrication of InP three-dimensional ordered array structure were investigated by applying interference to regulate the electrochemical oscillation behavior. Double beam double exposure was used to prepare the mask. The effect of the characteristic size and period of mask obtained by double beam double exposure on the morphology of porous structure of electrochemically etched InP was analyzed. The formation of radial porous structure clusters in electrochemical etching of InP. The formation of the pore wall is analyzed by the space charge layer theory.
【學(xué)位授予單位】：長(zhǎng)春理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.2

【引證文獻(xiàn)】

相關(guān)期刊論文 前1條

1 梁凱華;;電化學(xué)刻蝕InP過程中電流密度對(duì)刻蝕深度的影響[J];科技創(chuàng)新與應(yīng)用;2017年11期

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本文編號(hào)：1476329