本文關(guān)鍵詞： 失效物理 失效率計算方法 集成電路失效機理 蒙特卡羅方法 失效分布　出處：《廣東工業(yè)大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著半導(dǎo)體技術(shù)的不斷發(fā)展與普及,集成電路的市場從過去要求高可靠性的軍事、太空領(lǐng)域,逐漸拓展到更廣闊的商用和民用市場�？煽啃苑抡媾c預(yù)測工具,成為加快開發(fā)進度,幫助尋求產(chǎn)品性能與可靠性之間平衡的有力手段。傳統(tǒng)的“預(yù)計手冊”的方法,由于更新周期、使用范圍的一些限制,逐漸難以跟上行業(yè)發(fā)展的步伐。所以,以基于可靠性物理的預(yù)計方法逐步代替?zhèn)鹘y(tǒng)方法,成為一種趨勢�？煽啃晕锢砟Ｐ驮谑逝c失效分布的預(yù)計方面一直有所欠缺,本文試圖在這一方面做些嘗試。本論文對芯片級CMOS集成電路的四種失效機理(HCI、NBTI、TDDB與EM)的物理模型進行了梳理。分別采用幸運電子模型及HU模型,得到HCI壽命模型；采用反應(yīng)擴散模型,得到NBTI的壽命模型；采用滲濾模型,直接得到了TDDB的失效分布模型；采用Black方程,得到了EM的壽命模型�；趬勖Ｐ�,通過蒙特卡羅方法及連續(xù)隨機變量非線性函數(shù)期望方差的近似求法兩種數(shù)學(xué)方法,對HCI、NBTI及EM三種集成電路的失效機理進行Matlab仿真,得到其失效分布。通過梳理滲流模型的推導(dǎo)過程,整理出TDDB的失效分布模型。幾種失效分布模型中的參數(shù)都來自于器件的特征參數(shù)與環(huán)境參數(shù),這樣就建立了器件四種失效機理的失效分布與器件固有參數(shù)之間的聯(lián)系,使得基于失效物理的集成電路失效率預(yù)計變?yōu)榭赡�。集成電路由大量CMOS組成,且多種失效機理造成的器件失效相互無關(guān)。本文也探討了集成電路總的失效分布及常數(shù)失效率的計算。通過VB,將失效率的計算過程編制為一套計算程序,在輸入CMOS集成電路的特征參數(shù)與環(huán)境參數(shù)后,能根據(jù)設(shè)定計算出失效率結(jié)果與失效分布圖。
[Abstract]:With the continuous development and popularization of semiconductor technology, the market of integrated circuits has gradually expanded from the military and space fields which required high reliability in the past to a broader commercial and civil market, reliability simulation and prediction tools. Become a powerful means of accelerating development and helping to find a balance between product performance and reliability. The traditional "expected Manual" approach, due to the update cycle, has some limitations on the scope of use. It is gradually difficult to keep up with the development of the industry. Therefore, the traditional method is gradually replaced by the prediction method based on reliability physics. Reliability physical model has been lacking in the prediction of failure rate and failure distribution. This paper attempts to make some attempts in this field. In this paper, four failure mechanisms of chip level CMOS integrated circuits are discussed. The lucky electron model and Hu model were used to obtain the HCI lifetime model. The life model of NBTI is obtained by using the reaction diffusion model. The failure distribution model of TDDB is obtained directly by using percolation model. The life model of EM is obtained by using Black equation. Based on the life model, two mathematical methods, Monte Carlo method and approximate method to find the expected variance of nonlinear function of continuous random variables, are used to solve the problem of HCI. The failure mechanism of NBTI and EM integrated circuits is simulated by Matlab, and the failure distribution is obtained. The failure distribution model of TDDB is sorted out. The parameters of several failure distribution models come from the characteristic parameters and environmental parameters of the device. In this way, the relationship between the failure distribution of the four failure mechanisms and the intrinsic parameters of the device is established, which makes it possible to predict the failure rate of integrated circuits based on the failure physics. The integrated circuits consist of a large number of CMOS. This paper also discusses the calculation of the total failure distribution and constant failure rate of integrated circuits. Through VB, the calculation process of failure rate is compiled into a set of calculation programs. After input the characteristic parameters and environment parameters of CMOS integrated circuit, the failure rate result and failure distribution diagram can be calculated according to the setting.
【學(xué)位授予單位】：廣東工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN432

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