本文關鍵詞： HEMT 電學法 熱阻 自激振蕩　出處：《北京工業(yè)大學》2015年碩士論文　論文類型：學位論文

【摘要】：半導體微波功率器件在高頻、大功率的應用中具有顯著的優(yōu)勢,在現(xiàn)代社會中的應用也越來越廣泛,通信、航天、計算機信號處理等領域都有所涉及。然而,在大功率工作下,器件會發(fā)生自熱效應,有源區(qū)溫度會越來越高,造成器件電學特性及使用壽命下降。因此,準確測量器件的溝道溫度及熱阻構成對器件的壽命及可靠性有著至關重要的作用。本文基于電學法測量半導體器件溝道溫度原理,利用實驗室自主研發(fā)的熱阻測試儀,對微波功率器件的熱特性以及高頻壓振電路設計等方面進行了深入的研究。本文主要包括以下工作:一、基于微波傳輸和阻抗匹配理論,分別對AlGaN/GaN HEMT器件和MMIC器件進行測試匹配電路的設計和測量。解決器件在測試過程中由于自身寄生參數(shù)產(chǎn)生的自激振蕩,以及外加測試板時引入的信號串擾。應用本實驗室的熱阻測試儀,完成器件的穩(wěn)態(tài)熱阻測量等相關實驗,并提出幾種抑制消除電路自激振蕩的方法。二、基于電學法測量器件有源區(qū)溫度原理,利用本實驗室熱阻測試儀進行不同工作狀態(tài)對器件穩(wěn)態(tài)熱阻影響的相關研究。選取AlGaAs/InGaAs pHEMT器件,測量出其溫度系數(shù)和溫敏參數(shù),實驗測量等功率下,不同漏源電壓對器件穩(wěn)態(tài)熱阻的影響。利用紅外熱像儀監(jiān)測器件表面溫度變化,并與電學法測量結果進行對比。三、基于熱阻測試儀測量原理,改變測試條件,施加多次連續(xù)脈沖激勵,測量AlGaN/GaN HEMT器件在不同占空比的單次脈沖下的結溫,以及結溫隨脈沖次數(shù)的變化軌跡,并研究器件在不同占空比脈沖下的瞬態(tài)熱阻。四、利用工藝及器件仿真工具ISE-TCAD對器件進行等功率下的電場強度仿真,模擬在不同漏源電壓下的器件內部電場分布情況,探究造成器件在不同工作狀態(tài)下熱阻改變的原因。
[Abstract]:Semiconductor microwave power devices have significant advantages in high-frequency and high-power applications. They are also more and more widely used in modern society, such as communication, aerospace, computer signal processing and other fields. Under the high power operation, the device will have the self-heating effect, and the temperature in the active region will be higher and higher, which will lead to the decrease of the electrical characteristics and service life of the device. The accurate measurement of channel temperature and thermal resistance is very important to the lifetime and reliability of semiconductor devices. This paper is based on the principle of measuring channel temperature of semiconductor devices. The thermal characteristics of microwave power devices and the design of high-frequency voltage circuit are studied by using the thermal resistance tester developed by the laboratory. The main contents of this paper are as follows: 1. Based on microwave transmission and impedance matching theory. Design and measure the matching circuit of AlGaN/GaN HEMT device and MMIC device, and solve the self-excited oscillation caused by parasitic parameters in the test process. And the signal crosstalk introduced in the external test board. By using the thermal resistance tester in our laboratory, the steady-state thermal resistance measurement of the device and other related experiments are completed, and several methods to suppress the self-excited oscillation of the circuit are put forward. 2. Based on the principle of measuring the active region temperature of the device by electrical method. The influence of different working states on the steady-state thermal resistance of the device was studied by using the thermal resistance tester in our laboratory. The AlGaAs/InGaAs pHEMT device was selected. The temperature coefficient and temperature sensitive parameters were measured and the influence of different leakage voltage on the steady-state thermal resistance of the device was measured experimentally. The surface temperature change of the device was monitored by infrared thermal imager. And compared with the results of electrical measurement. Third, based on the measuring principle of thermal resistance tester, change the test conditions and apply multiple continuous pulse excitation. The junction temperature of AlGaN/GaN HEMT device under single pulse with different duty cycle and the track of junction temperature with pulse number were measured. The transient thermal resistance of the device under different duty cycle pulse is studied. Fourthly, the electric field intensity of the device is simulated at the same power by using the process and device simulation tool ISE-TCAD. The internal electric field distribution of the device under different drain voltage is simulated to explore the causes of the thermal resistance change under different working conditions.
【學位授予單位】：北京工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN61

【參考文獻】

相關碩士學位論文 前1條

1 李靜強;AlGaN/GaN HEMT器件微波功率特性與內匹配技術研究[D];河北工業(yè)大學;2007年

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本文編號：1450462