本文關(guān)鍵詞： 負(fù)偏置溫度不穩(wěn)定性 電路時(shí)序違規(guī) 雙權(quán)值 關(guān)鍵門 非門替換　出處：《應(yīng)用科學(xué)學(xué)報(bào)》2017年02期 　論文類型：期刊論文

【摘要】：在納米工藝水平下,負(fù)偏置溫度不穩(wěn)定性(negative bias temperature instability,NBTI)成為影響集成電路可靠性的關(guān)鍵性因素.NBTI效應(yīng)導(dǎo)致晶體管閾值電壓增加,老化加劇,最終使電路時(shí)序違規(guī).為了緩解電路的NBTI效應(yīng),定義了時(shí)延關(guān)鍵性權(quán)值和拓?fù)浣Y(jié)構(gòu)關(guān)鍵性權(quán)值.使用該雙權(quán)值識別的關(guān)鍵門更加精確,并且考慮到了關(guān)鍵門的扇入門為非門的情況,即將非門視為單輸入與非門,并將其替換為雙輸入與非門,從而能更加全面地防護(hù)關(guān)鍵門.應(yīng)用基于雙權(quán)值的門替換方法對基于45 nm晶體管工藝的ISCAS85基準(zhǔn)電路實(shí)驗(yàn)結(jié)果顯示:當(dāng)電路時(shí)序余量為5%時(shí),不考慮非門替換時(shí)電路的時(shí)延改善率為38.29%,考慮非門替換時(shí)電路的時(shí)延改善率為60.66%.
[Abstract]:At the nanometer process level, the negative bias temperature instability is negative bias temperature instability. NBTI) has become a key factor affecting the reliability of integrated circuits. NBTI effect leads to the increase of transistor threshold voltage, aggravation of aging, and ultimately the circuit timing violation. In order to alleviate the NBTI effect of the circuit. The delay critical weight and the topology critical weight are defined. The key gates identified by the double weights are more accurate and take into account the fact that the key gate's entry is a non-gate. Treat non-gate as single-input and non-gate, and replace it with double-input and non-gate. Thus, the key gates can be protected more comprehensively. The experimental results of ISCAS85 reference circuit based on 45nm transistor process show that: (1) the gate substitution method based on double weights is applied to the experimental results of the ISCAS85 reference circuit based on 45 nm transistor process. When the circuit timing allowance is 5. The delay improvement rate is 38.29 when non-gate substitution is not considered, and 60.66 when non-gate substitution is considered.
【作者單位】： 合肥工業(yè)大學(xué)電子科學(xué)與應(yīng)用物理學(xué)院;
【基金】：國家自然科學(xué)基金(No.61371025,No.61274036)資助
【分類號】：TN40
【正文快照】： 隨著集成電路制造工藝的不斷發(fā)展,器件工藝尺寸不斷減小,晶體管老化成為影響集成電路可靠性的重要問題,其中負(fù)偏置溫度不穩(wěn)性(negative bias temperature instability,NBTI)效應(yīng)是最主要的老化機(jī)制.NBTI效應(yīng)主要影響電路中的PMOS晶體管,當(dāng)PMOS晶體管處于受壓狀態(tài),即PMOS晶體管

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