本文關(guān)鍵詞：基于ZnO陣列的銀表面二次電子發(fā)射抑制技術(shù)　出處：《中國(guó)空間科學(xué)技術(shù)》2017年02期 　論文類型：期刊論文

  更多相關(guān)文章： 微放電 二次電子發(fā)射系數(shù) ZnO陣列 陷阱結(jié)構(gòu) 抑制

【摘要】：隨著衛(wèi)星有效載荷的射頻功率越來(lái)越大,傳統(tǒng)的微放電抑制方法已經(jīng)無(wú)法滿足大功率衛(wèi)星有效載荷的需求。降低大功率射頻部件內(nèi)表面的二次電子發(fā)射系數(shù)是抑制微放電效應(yīng)的重要方法之一,通過(guò)在金屬銀表面構(gòu)造納米量級(jí)ZnO陣列,實(shí)現(xiàn)了納米尺度銀陷阱結(jié)構(gòu)的制備,研究了晶種制備方式、鋅鹽濃度對(duì)ZnO陣列生長(zhǎng)的影響。結(jié)果表明,采用紫外照射法制備晶種獲得的ZnO陣列在樣片表面分布均勻,提高鋅鹽濃度可改善ZnO陣列的分布均勻性。分析了ZnO陣列排列密度對(duì)銀膜構(gòu)筑的影響,發(fā)現(xiàn)在低密度的ZnO陣列上更加容易鍍覆金屬銀。因此,獲得了鍍銀表面基于ZnO陣列的陷阱結(jié)構(gòu)制備的工藝技術(shù),實(shí)現(xiàn)金屬銀表面二次電子發(fā)射系數(shù)最大值降低36.3%。
[Abstract]:The radio frequency power of satellite payload is increasing. The traditional micro-discharge suppression method can not meet the demand of high-power satellite payload. Reducing the secondary electron emission coefficient on the inner surface of high-power RF components is one of the important methods to suppress the micro-discharge effect. Nano-scale silver trap structure was prepared by constructing nanoscale ZnO arrays on the surface of silver metal. The effects of seed preparation and zinc salt concentration on the growth of ZnO arrays were studied. The ZnO arrays prepared by ultraviolet irradiation were distributed uniformly on the surface of the samples. The distribution uniformity of ZnO arrays can be improved by increasing the concentration of zinc salt. The influence of the arrangement density of ZnO arrays on the silver film construction is analyzed. It is found that it is easier to coat silver on the low density ZnO arrays. The technology of fabricating trap structure based on ZnO array on silver plated surface is obtained. The maximum emission coefficient of secondary electron on silver surface is reduced by 36.3%.
【作者單位】： 西安交通大學(xué)電子與信息工程學(xué)院電子物理與器件教育部重點(diǎn)實(shí)驗(yàn)室;中國(guó)空間技術(shù)研究院西安分院空間微波技術(shù)重點(diǎn)實(shí)驗(yàn)室;陜西科技大學(xué)輕工科學(xué)與工程學(xué)院;
【基金】：國(guó)家自然科學(xué)基金(U1537211) 空間微波技術(shù)重點(diǎn)實(shí)驗(yàn)室基金(9140C530101130C53013,9140C530101140C53231)
【分類號(hào)】：TG174.4;TN304.21
【正文快照】： 網(wǎng)絡(luò)出版地址:http:∥kns.cnki.net/kcms/detail/11.1859.V.20170321.1543.009.html引用格式:胡天存,曹猛,鮑艷,等.基于ZnO陣列的銀表面二次電子發(fā)射抑制技術(shù)[J].中國(guó)空間科學(xué)技術(shù),2017,37(2):54-60.HU T C,CAO M,BAO Y,et al.Technique for inhibiting secondary electron em

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本文編號(hào)：1430518