本文關(guān)鍵詞：GaN基熱電材料表征及性質(zhì)研究　出處：《河北科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 熱電材料 GaN 塞貝克效應(yīng)和電導(dǎo)率測試儀 摻雜 熱電性能

【摘要】：熱電材料是一種使用非常廣泛的半導(dǎo)體功能材料,它可以實現(xiàn)熱能和電能之間的相互轉(zhuǎn)換。GaN基熱電材料具有較大的禁帶寬度、良好的熱穩(wěn)定性以及高的電導(dǎo)率和塞貝克(Seebeek)系數(shù),所以,這些材料成為了一種非常有發(fā)展前景的熱電材料。本文以GaN基熱電材料為研究對象,搭建一套室溫下測量半導(dǎo)體材料塞貝克系數(shù)和電導(dǎo)率的裝置。此外,該設(shè)備實現(xiàn)了自動化控制,采用的控制程序是基于Labview測量控制軟件平臺,使用圖形化編輯語言G編寫程序。此設(shè)備是用來測量半導(dǎo)體薄膜材料的塞貝克系數(shù)和電導(dǎo)率的,塞貝克系數(shù)和電阻率是材料重要的熱電輸運性能參數(shù)。精確測定它們對深入研究半導(dǎo)體材料的熱電輸運機理,特別是對深入研究和開發(fā)新型半導(dǎo)體熱電材料和器件具有非常重要的應(yīng)用價值和理論意義。對GaN材料室溫?zé)犭娞匦赃M行研究,結(jié)果表明,隨著載流子濃度的增加遷移率減小,電導(dǎo)率增加。塞貝克系數(shù)降低,范圍在100-500μV/K之間。在載流子濃度為1.60×1018 cm-3時,Ga N薄膜材料的熱電功率因子有最大值為4.72×10-4 W/mK2,GaN薄膜的室溫ZT達到極大值為0.0025。此外,將大塊GaN材料和薄膜GaN材料的熱電性能進行了對比研究,結(jié)果表明,薄膜GaN材料由于具有較高的位錯散射,其塞貝克系數(shù)比大塊GaN材料大。由于大塊GaN材料的塞貝克系數(shù)比較低,所以其功率因數(shù)的范圍在0.315×10-4 W/mK2到0.354×10-4 W/mK2之間。簡單介紹了一下GaN器件的制作方法以及對其繼續(xù)研究的展望。
[Abstract]:Thermoelectric material is a widely used semiconductor functional material. It can realize the conversion between thermal energy and electrical energy. Gan based thermoelectric material has a large bandgap. Good thermal stability and high conductivity and Seebeek coefficient, so. These materials have become a very promising thermoelectric materials. In this paper, GaN based thermoelectric materials as the research object, build a set of semiconductor materials at room temperature to measure the Seebeck coefficient and conductivity. In addition. The control program is based on Labview measurement and control software platform. This device is used to measure the Seebeck coefficient and conductivity of semiconductor thin film materials. Seebeck coefficient and resistivity are important parameters of thermoelectric transport performance. Especially, it has very important application value and theoretical significance to study and develop new semiconductor thermoelectric materials and devices. The thermoelectric properties of GaN materials at room temperature are studied, and the results show that. With the increase of carrier concentration, the conductivity increases and the conductivity decreases, the Seebeck coefficient decreases in the range of 100-500 渭 V / K, and the carrier concentration is 1.60 脳 1018 cm-3. The maximum thermoelectric power factor of GaN thin film is 4.72 脳 10 ~ (-4) W / m _ (K _ (2)) gan film, and the maximum value of ZT is 0.0025 at room temperature. The thermoelectric properties of bulk GaN material and thin film GaN material were compared and studied. The results show that the thin film GaN material has higher dislocation scattering. The Seebeck coefficient is larger than that of the bulk GaN material, and the Seebeck coefficient of the bulk GaN material is lower than that of the bulk GaN material. So the power factor ranges from 0.315 脳 10-4 W / mK2 to 0.354 脳 10-4. This paper briefly introduces the fabrication method of GaN device and the prospect of its further research.
【學(xué)位授予單位】：河北科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN304

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