本文關(guān)鍵詞：光伏型InSb紅外焦平面探測器的性能研究　出處：《西安電子科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 光伏型 InSb紅外焦平面探測器 量子效率 串音 瞬態(tài)響應(yīng)

【摘要】：近幾十年來,紅外焦平面探測器在航空航天、紅外遙感、國防、氣象、環(huán)境、醫(yī)學(xué)和科學(xué)儀器等領(lǐng)域得到廣泛的應(yīng)用。InSb紅外焦平面探測器作為最重要的中波段探測器之一,成為國內(nèi)外的研究熱點(diǎn),它的發(fā)展在很大程度上提高了整個(gè)紅外系統(tǒng)的性能。光伏型InSb紅外焦平面探測器由于暗電流較小,能源消耗低等優(yōu)勢,被廣泛應(yīng)用。國內(nèi)外對于光伏型InSb紅外焦平面探測器研究已經(jīng)很多,但是對于光伏型InSb紅外焦平面探測器內(nèi)部機(jī)理的研究十分少,因此掌握光伏型InSb紅外焦平面探測器的內(nèi)部機(jī)理具有十分重要的意義,同時(shí)探索性能更高的光伏型InSb紅外焦平面探測器新結(jié)構(gòu)具有十分重要的價(jià)值。本論文主要從光伏型InSb紅外焦平面探測器內(nèi)部機(jī)理的研究著手,對傳統(tǒng)結(jié)構(gòu)器件性能進(jìn)行了系統(tǒng)的研究,并在對傳統(tǒng)結(jié)構(gòu)機(jī)理分析的基礎(chǔ)上,對新型探測器結(jié)構(gòu)進(jìn)行了初步研究,論文主要做了如下工作:首先通過半導(dǎo)體器件仿真平臺,對傳統(tǒng)探測器進(jìn)行建模,并對其基礎(chǔ)性能進(jìn)行了仿真分析,主要研究了探測器的結(jié)構(gòu)參數(shù),如光敏元寬度、光敏元間距、臺面高度、緩沖層厚度,以及n型、p型摻雜濃度和p-n結(jié)結(jié)深等對探測器性能的影響,并通過分析探測器中電場分布、復(fù)合速率分布等與結(jié)構(gòu)參數(shù)和p-n結(jié)結(jié)深等的相關(guān)性,揭示了結(jié)構(gòu)參數(shù)、p-n結(jié)結(jié)深影響探測器的串音和量子效率的內(nèi)在物理機(jī)制,并獲得了對探測器優(yōu)化設(shè)計(jì)有指導(dǎo)意義的研究結(jié)論。其次,通過對光伏型InSb紅外焦平面探測器傳統(tǒng)結(jié)構(gòu)機(jī)理分析,得到光伏型InSb紅外焦平面探測器新結(jié)構(gòu);對InSb紅外焦平面探測器的新結(jié)構(gòu)進(jìn)行初步仿真分析,并與傳統(tǒng)結(jié)構(gòu)進(jìn)行對比,結(jié)果表明新結(jié)構(gòu)的性能優(yōu)于傳統(tǒng)結(jié)構(gòu)的性能。同時(shí)對探測器的瞬態(tài)響應(yīng)進(jìn)行研究,主要研究了材料參數(shù)對探測器輸出響應(yīng)的影響,其中包括材料的摻雜濃度、載流子壽命以及載流子的遷移率。
[Abstract]:In recent decades, infrared focal plane detectors in aerospace, infrared remote sensing, national defense, meteorology, environment. InSb infrared focal plane detector, as one of the most important mid-band detectors, has been widely used in the field of medical and scientific instruments, and has become a research hotspot at home and abroad. Its development has greatly improved the performance of the whole infrared system. Photovoltaic InSb infrared focal plane detector has the advantages of small dark current and low energy consumption. There have been a lot of researches on photovoltaic InSb infrared focal plane detectors at home and abroad, but there are very few studies on the internal mechanism of photovoltaic InSb infrared focal plane detectors. Therefore, it is very important to master the internal mechanism of photovoltaic InSb infrared focal plane detector. At the same time, it is very important to explore the new structure of photovoltaic InSb infrared focal plane detector with higher performance. In this paper, the internal mechanism of photovoltaic InSb infrared focal plane detector is studied. On the basis of the analysis of the traditional structure mechanism, the performance of the traditional structure device is studied systematically, and the new detector structure is studied preliminarily. The main work of this paper is as follows: firstly, the traditional detector is modeled on the semiconductor device simulation platform, and its basic performance is simulated and analyzed, and the structure parameters of the detector are mainly studied. For example, Guang Min element width, Guang Min element spacing, Mesa height, buffer layer thickness, n-type p-type doping concentration and p-n junction depth affect the performance of the detector, and the electric field distribution in the detector is analyzed. The dependence of the recombination rate distribution on the structure parameters and the junction depth of p-n junction reveals the intrinsic physical mechanism that the structural parameters of p-n junction depth affect the crosstalk and quantum efficiency of the detector. And obtained the research conclusion which has the guiding significance to the detector optimization design. Secondly, through the analysis of the traditional structure mechanism of photovoltaic InSb infrared focal plane detector. A new structure of photovoltaic InSb infrared focal plane detector is obtained. The new structure of InSb infrared focal plane detector is preliminarily simulated and compared with the traditional structure. The results show that the performance of the new structure is better than that of the traditional structure. Meanwhile, the transient response of the detector is studied, and the influence of material parameters on the output response of the detector is mainly studied, including the doping concentration of the material. Carrier lifetime and carrier mobility.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN215

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本文編號：1424855