本文關(guān)鍵詞：基于納米多孔銅結(jié)構(gòu)的低溫?zé)釅烘I合技術(shù)研究　出處：《華中科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 三維封裝 Cu-Cu低溫鍵合 脫合金 納米多孔銅結(jié)構(gòu) 熱壓鍵合

【摘要】：三維封裝是一種先進(jìn)的封裝互連技術(shù),具有互連距離短、信號(hào)傳輸快、集成度高、信號(hào)干擾少等優(yōu)點(diǎn)。鍵合是使得芯片堆疊得以完成的關(guān)鍵技術(shù),其中,銅-銅熱壓鍵合能同時(shí)完成電熱連接和機(jī)械連接,因而成為三維封裝的首選鍵合技術(shù)。然而,以往的銅-銅熱壓鍵合溫度偏高,工藝時(shí)間長,效率普遍較低。因而亟需控制鍵合溫度以增強(qiáng)產(chǎn)品性能并減小生產(chǎn)成本。納米多孔銅結(jié)構(gòu)具有比表面積大、表面活性高、擴(kuò)散系數(shù)大以及納米尺寸效應(yīng)等特點(diǎn),利用該特殊結(jié)構(gòu)作鍵合層有潛力降低鍵合溫度。當(dāng)前,納米多孔銅的主要制備手段是脫合金法,此方法工藝簡單,且可通過調(diào)節(jié)工藝參數(shù)得到不同尺寸的納米多孔結(jié)構(gòu)。本文采用脫合金法制備納米多孔銅,并使用此特殊結(jié)構(gòu)作鍵合層以達(dá)到低溫鍵合目的。主要研究內(nèi)容包括:首先,討論了基于納米多孔銅的低溫?zé)釅烘I合技術(shù)的原理。納米多孔銅具有大比表面積、高表面活性、納米尺寸效應(yīng),且較體材料軟等特點(diǎn),這些特性都有助于降低鍵合溫度和壓力;其次,以Cu-Zn合金為研究載體,分析了影響納米多孔銅結(jié)構(gòu)的關(guān)鍵因素,包括退火溫度、鍍鋅時(shí)間以及腐蝕時(shí)間。研究表明,較低的退火溫度難以使Cu、Zn完全合金化,而過高的退火溫度又會(huì)產(chǎn)生熱應(yīng)力,合適的退火溫度為150~160℃;隨著鍍鋅時(shí)間增加,納米多孔銅結(jié)構(gòu)的孔徑尺寸逐漸縮小并趨于穩(wěn)定,分析得出較理想的鍍鋅時(shí)間為12min;而隨著腐蝕時(shí)間增加,韌帶出現(xiàn)粗化現(xiàn)象,適宜的腐蝕時(shí)間為10min;再次,對(duì)納米多孔銅的熱學(xué)性能和力學(xué)性能進(jìn)行了分析。結(jié)果表明,納米多孔銅在200℃便開始出現(xiàn)表面熔融現(xiàn)象,表明其熔化閾值溫度遠(yuǎn)低于體材料;而納米壓痕測試結(jié)果表明,納米多孔銅的硬度和楊氏模量均小于體材料;最后,分析了不同工藝條件對(duì)納米熱壓鍵合質(zhì)量的影響。在250℃低溫下,鍵合壓力為0.5MPa并持續(xù)120min,得到了良好的鍵合結(jié)果(拉伸強(qiáng)度高達(dá)5.2MPa)。而無納米多孔銅的光面銅熱壓鍵合強(qiáng)度幾乎為零,兩者對(duì)比證實(shí)了基于納米多孔銅低溫鍵合的可行性。
[Abstract]:Three-dimensional packaging is an advanced packaging interconnection technology with the advantages of short interconnect distance, fast signal transmission, high integration and less signal interference. Bonding is the key technology to make chip stacking complete. Copper-copper hot pressing bonding can complete both electrothermal bonding and mechanical bonding, so it has become the preferred bonding technology for 3D packaging. However, the previous copper-copper hot pressing bonding temperature is high and the processing time is long. The efficiency is generally low, so it is urgent to control the bonding temperature to enhance the product performance and reduce the production cost. The nano-porous copper structure has the characteristics of large specific surface area, high surface activity, large diffusion coefficient and nano-size effect. Using the special structure as the bonding layer has the potential to reduce the bonding temperature. At present, the main preparation method of nano-porous copper is dealloying, and the process is simple. Different sizes of porous nano-copper can be obtained by adjusting the process parameters. In this paper, nano-porous copper was prepared by dealloying method. This special structure is used as the bonding layer to achieve the purpose of low temperature bonding. The main research contents include: firstly, the principle of low temperature hot pressing bonding technology based on nano-porous copper is discussed. The nano-porous copper has large specific surface area. The characteristics of high surface activity, nanometer size effect, and softer than bulk materials are helpful to reduce bonding temperature and pressure. Secondly, the key factors affecting the structure of nano-porous copper, including annealing temperature, galvanizing time and corrosion time, were analyzed with Cu-Zn alloy as the carrier. It is difficult to make Cu Zn alloying completely at lower annealing temperature, but too high annealing temperature will result in thermal stress. The appropriate annealing temperature is 150 ~ 160 鈩，

本文編號(hào)：1407485