本文關鍵詞：原子層沉積技術制備氧化鋅薄膜及其性能的研究　出處：《北京交通大學》2015年碩士論文　論文類型：學位論文

  更多相關文章： 原子層沉積 可變電場調制的原子層沉積 ZnO薄膜 前驅體源 生長周期

【摘要】：氧化鋅(ZnO)作為第三代半導體材料,由于其禁帶寬度大,可以廣泛的應用于制造藍綠光和紫外光的光電器件,同時還具有電子漂移飽和速度高、介電常數(shù)小等特點,因此,成為當下半導體材料的研究熱點。而原子層沉積技術(ALD)是近些年發(fā)展起來的薄膜制備技術,由于該技術制備的薄膜性能優(yōu)異、厚度可控且保型性好,也越來越受到人們的關注。本文利用自主研制原子層沉積設備在藍寶石襯底上沉積新型半導體材料ZnO薄膜,并通過對薄膜晶型與形貌的測試,完成對ALD技術所制備ZnO薄膜性能的分析。 1、采用熱型ALD技術制備ZnO薄膜時,首先研究了鋅源脈沖時間對ZnO薄膜性能的影響,實驗中均得到了單一(002)晶向的薄膜。實驗中還發(fā)現(xiàn)薄膜的厚度以及生長速率與鋅源脈沖時間并無直接的聯(lián)系,但是隨著鋅源脈沖時間的增加,薄膜結晶性能得到改善,粗糙度有所降低,載流子濃度從5.5×1019/cm3增加到7.6×1019/cm3,導電性得到增強。 2、采用熱型ALD技術制備ZnO薄膜時,其次我們研究了生長的循環(huán)周期數(shù)對ZnO薄膜性能的影響。實驗中發(fā)現(xiàn),通過增加生長的循環(huán)周期數(shù),可以使薄膜晶粒尺寸明顯增大,結晶性得到了很大的改善。當循環(huán)周期數(shù)為1000時,晶粒尺寸可達到50納米,約是200循環(huán)的2.5倍,因此可以通過控制生長的循環(huán)周期數(shù)來調節(jié)ZnO薄膜的晶粒尺寸。 3、針對常規(guī)ALD的技術難點和問題,首次提出可變電場調制的原子層沉積技術(E-PEALD)的概念,并從理論上分析E-PEALD技術對反應物的作用模式。 4、采用E-PEALD技術制備ZnO薄膜時,我們研究了所施加的電場方向對ZnO薄膜性能的影響,實驗中發(fā)現(xiàn),可通過控制所施加電場的方向來調節(jié)ZnO薄膜的晶向。同時還研究了所施加電場的強度對ZnO薄膜性能的影響,在電場方向為(Zn-/O+)時,可通過增大電場強度來提高薄膜在(002)晶向的單晶性。
[Abstract]:Zinc oxide (ZnO) as the third generation semiconductor material, because of its wide band gap, it can be widely used in the manufacture of blue-green light and ultraviolet light optoelectronic devices, but also has high electron drift saturation speed. Because of its small dielectric constant, ALD has become a hot research topic in semiconductor materials, and ALD (Atomic layer deposition) is a new thin film preparation technology developed in recent years. The film prepared by this technology has excellent properties, controllable thickness and good shape preservation. In this paper, ZnO thin films are deposited on sapphire substrates with atomic layer deposition equipment, and the crystal shape and morphology of the films are tested. The properties of ZnO films prepared by ALD were analyzed. 1. The effect of pulse time of zinc source on the properties of ZnO thin films was studied by thermal ALD technique. The thickness and growth rate of the films are not directly related to the pulse time of zinc source, but with the increase of the pulse time of zinc source. The crystalline properties of the films were improved, the roughness was decreased, the carrier concentration was increased from 5.5 脳 10 19 / cm 3 to 7.6 脳 10 19% cm 3, and the conductivity was enhanced. 2. When ZnO thin films were prepared by thermal ALD, the effect of cycle number on the properties of ZnO thin films was studied. When the cycle number is 1000, the grain size can reach 50 nm, which is about 2.5 times that of 200 cycles. Therefore, the grain size of ZnO films can be adjusted by controlling the cycle number of growth. 3. Aiming at the technical difficulties and problems of conventional ALD, the concept of E-PEALDD, which is a variable electric field modulated atomic layer deposition technique, is proposed for the first time. The action mode of E-PEALD on reactants is analyzed theoretically. 4. When ZnO thin films were prepared by E-PEALD, we studied the effect of the applied electric field direction on the properties of ZnO thin films. The crystal direction of ZnO thin films can be adjusted by controlling the direction of applied electric field, and the influence of the applied electric field intensity on the properties of ZnO thin films is also studied, when the electric field direction is Zn-r / O). By increasing the electric field intensity, the single crystal properties of the thin films in the crystal direction of (002) can be improved.
【學位授予單位】：北京交通大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN304

【參考文獻】

相關期刊論文 前6條

1 梁春廣,張冀;GaN——第三代半導體的曙光[J];半導體學報;1999年02期

2 毛祥軍,楊志堅,張國義,葉志鎮(zhèn);在ZnO/Al_2O_3襯底上生長高質量GaN單晶薄膜[J];高技術通訊;1999年03期

3 郭保智;劉永生;房文健;徐娟;武新芳;彭麟;;氧化鋅n型導電機理研究進展[J];硅酸鹽通報;2014年01期

4 潘峰,范毓殿,柳百新;納米磁性多層膜研究進展[J];物理;1993年09期

5 何俊鵬;章岳光;沈偉東;劉旭;顧培夫;;原子層沉積技術及其在光學薄膜中的應用[J];真空科學與技術學報;2009年02期

6 盧維爾;董亞斌;李超波;夏洋;李楠;;原子層沉積生長速率的控制研究進展[J];無機材料學報;2014年04期

相關博士學位論文 前1條

1 李林;氧化鋅p型摻雜的相關問題研究[D];中國科學院研究生院（長春光學精密機械與物理研究所）;2010年

，

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