基于硅微通道板的鈷系電活性材料析氫反應(yīng)研究
本文關(guān)鍵詞:基于硅微通道板的鈷系電活性材料析氫反應(yīng)研究 出處:《華東師范大學(xué)》2017年碩士論文 論文類型:學(xué)位論文
更多相關(guān)文章: 硅微通道板 宏孔導(dǎo)電網(wǎng)絡(luò) 氫氧化鈷 狼牙棒狀納米棒 析氫反應(yīng) 電催化
【摘要】:硅微通道板(SiliconMicrochannel Plates:SiMCPs)具有高深寬比和大比表面積這兩個優(yōu)點,是作為三維催化電極理想的基底層,在析氫反應(yīng)(HER)方面的應(yīng)用前景極其廣闊。對硅襯底進行一系列MEMS工藝進行處理得到標(biāo)準(zhǔn)的硅微通道板(方孔尺寸為5μm×5μm,深度為250μm)。首先,利用液流法在硅微通道板(SiMCPs)孔道內(nèi)側(cè)壁上沉積鈷鎳磷(CoNiP)合金材料(CoNiP/SiMCPs),制備了鈷鎳磷微米管陣列。比較了液流沉積與真空化學(xué)沉積兩種工藝方法,驗證了液流法對于SiMCPs化學(xué)沉積的優(yōu)化。其次,對CoNiP/SiMCPs在堿性電解液環(huán)境中的電化學(xué)特性進行了研究。CoNiP/SiMCPs催化電極具有高效的析氫反應(yīng)(HER)催化活性。在攪拌速度為550 r/min時,電極的過電位為229 mV對應(yīng)的電流密度為20 mA cm-2。在lmol L-1的KOH中,當(dāng)攪拌速度從0提高到550r/min,催化電極極化曲線的塔菲爾斜率為139.2-98.8 mV dec-1。相比于二維結(jié)構(gòu)的CoNiP/Si,三維非晶結(jié)構(gòu)的CoNiP/SiMCPs具有更優(yōu)良的HER催化性能。非貴重過渡金屬鈷的氫氧化物電催化劑的合成是一個重要的前沿課題。進一步的,我們在前面的硅微通道板的基礎(chǔ)上,利用液流淀積法形成宏孔導(dǎo)電網(wǎng)絡(luò)(MECN),利用水熱法成功合成三維狼牙棒狀的氫氧化鈷納米棒狀催化電極。這個獨特的架構(gòu)是一種具有高深寬比的三維陣列結(jié)構(gòu),能提供極大地有效面積,同時能在催化電化學(xué)反應(yīng)的電極與電解液界面處暴露出更多的活性點。我們分別與以MECN為基底的氫氧化鈷納米片和泡沫狀的氫氧化鈷做了全面的對比,發(fā)現(xiàn)我們合成的架構(gòu)展現(xiàn)了更加高效的HER的催化性能。催化電極電流密度為10 mAcm-2的情況下,存在較低的過電位為-69.2mVvs.RHE,塔菲爾斜率為61.9 mVdec-1。這種三維催化電極存在高電流密度以及穩(wěn)定的催化活性,使得其在析氫反應(yīng)上具有廣泛的應(yīng)用前景。
[Abstract]:The silicon micro channel plate (SiliconMicrochannel Plates:SiMCPs) with high aspect ratio and large surface area of these two advantages, as the basal layer of three-dimensional electrode ideal, in the hydrogen evolution reaction (HER) application is extremely broad. In a series of MEMS process to obtain standard silicon microchannel plate on the silicon substrate (square hole size of 5 m * 5 m and a depth of 250 mu m). First of all, in the micro channel flow method using liquid (SiMCPs) on the inner wall of pore deposition of cobalt nickel phosphorus alloy material (CoNiP) (CoNiP/SiMCPs), co-ni-p microtube arrays were prepared. The liquid flow vacuum deposition and chemical deposition process of two kinds of methods to verify the optimization for SiMCPs chemical deposition liquid flow method. Secondly, the electrochemical properties of CoNiP/SiMCPs in alkaline electrolyte environment is studied in the.CoNiP/SiMCPs catalytic electrode with hydrogen evolution reaction (HER), the catalytic activity in the mixing. The speed is 550 r/min, the over potential of electrode as the current density of 229 mV corresponding to 20 mA cm-2. in lmol L-1 KOH, when the stirring speed is increased from 0 to 550r/min, Tafel slope catalytic electrode polarization curves for 139.2-98.8 mV dec-1. compared to the two-dimensional structure of CoNiP/Si three-dimensional amorphous structure CoNiP/SiMCPs with HER catalyst more excellent performance of non precious catalysts. The synthesis of transition metal hydroxide cobalt is an important research topic. Further, we in front of the silicon micro channel plate on the formation of macro pore fluid deposition method using conductive network (MECN), cobalt hydroxide nanorods catalytic electrodes by hydrothermal method the successful synthesis of 3D Langya rod. This unique architecture is a three-dimensional array structure with high aspect ratio, can provide extremely effective area, while the electrode and electrolyte in electrochemical catalytic reaction The interface exposes more active sites. We respectively with MECN as cobalt hydroxide nano substrate and foam like cobalt hydroxide to do a comprehensive comparison, we found that the synthesis of architecture show the catalytic performance of more efficient HER. Catalytic electrode current density of 10 mAcm-2 under the condition that the existence of potential too low for -69.2mVvs.RHE Tafel, a slope of 61.9 mVdec-1. this three-dimensional catalytic electrode current density and has high catalytic activity and stability, which has wide application prospect in the hydrogen evolution reaction on it.
【學(xué)位授予單位】:華東師范大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2017
【分類號】:TN303
【參考文獻】
相關(guān)期刊論文 前5條
1 連柯楠;童新;付夢秋;譚人瑋;徐少輝;朱一平;熊大元;趙振杰;王連衛(wèi);;基于硅微通道板的NiFeP磁微米線陣列制備及軟磁性能[J];微納電子技術(shù);2016年12期
2 付夢秋;連柯楠;童新;譚人瑋;趙振杰;徐少輝;朱一平;熊大元;王連衛(wèi);;硅微通道板電沉積Fe-Ni微米線陣列結(jié)構(gòu)及磁性能[J];微納電子技術(shù);2016年12期
3 童新;連柯楠;付夢秋;譚人瑋;趙振杰;熊大元;徐少輝;朱一平;王連衛(wèi);;基于硅微通道板的CoNiP微米管陣列的磁性[J];微納電子技術(shù);2016年11期
4 王國政;陳立;秦旭磊;王薊;王洋;付申成;端木慶鐸;;Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching[J];半導(dǎo)體學(xué)報;2010年07期
5 李衛(wèi);徐嶺;孫萍;趙偉明;黃信凡;徐駿;陳坤基;;基于直接膠體晶體刻蝕技術(shù)的高度有序納米硅陣列的尺寸及形貌控制[J];物理學(xué)報;2007年07期
,本文編號:1396743
本文鏈接:http://sikaile.net/kejilunwen/dianzigongchenglunwen/1396743.html