本文關(guān)鍵詞：智能功率驅(qū)動芯片用SOI-FRD反向恢復特性的研究與優(yōu)化　出處：《東南大學》2016年碩士論文　論文類型：學位論文

  更多相關(guān)文章： 智能功率驅(qū)動芯片 SOI工藝 SOI-FRD 反向恢復特性

【摘要】：近些年來,智能功率驅(qū)動芯片因為自身高效率和高可靠性的優(yōu)點得到越來越多的關(guān)注。在智能功率驅(qū)動芯片中,快恢復二極管(FRD)主要作為橫向絕緣柵雙極型晶體管(LIGBT)的續(xù)流二極管使用,快恢復二極管的特性特別是其反向恢復特性對整個智能功率驅(qū)動芯片的功耗和可靠性有著重要的影響。目前國內(nèi)對快恢復二極管的研究多針對于縱向結(jié)構(gòu)的耐壓特性,對SOI-FRD結(jié)構(gòu)及其反向恢復特性關(guān)注較少。因此,迫切需要對SOI-FRD的反向恢復特性進行優(yōu)化,這對我國自主研發(fā)智能功率驅(qū)動芯片具有重要意義。本文首先調(diào)研了國內(nèi)外FRD的研究現(xiàn)狀以及常用技術(shù),詳細分析了FRD的反向恢復特性對功率開關(guān)管LIGBT以及智能功率驅(qū)動芯片的影響。然后從理論和仿真兩個方面探究影響FRD反向恢復特性的因素,并通過建立二極管反向恢復解析模型,本文提出了一種新型PT-IDDOT快恢復二極管結(jié)構(gòu)。新結(jié)構(gòu)一方面通過在器件漂移區(qū)中制備兩個非對稱深溝槽以提高器件耐壓,從而縮短漂移區(qū)長度,有效降低了器件的反向恢復時間,提高了器件的開關(guān)速度。另一方面,在反向恢復過程中,兩個深溝槽之間的間隙會捕獲少數(shù)載流子,同時深溝槽之間的Ptop層會電離出少數(shù)載流子,保證有足夠的少數(shù)載流子維持器件的反向恢復過程,提高了器件的反向恢復軟度。利用功率半導體器件仿真軟件Sentaurus TCAD對PT-IDDOT快恢復二極管的特性進行仿真,仿真結(jié)果顯示PT-IDDOT快恢復二極管的反向恢復時間為69ns,與傳統(tǒng)結(jié)構(gòu)相比降低了37.5%。在0.5gm的S0I工藝平臺上進行流片,流片測試結(jié)果表明PT-IDDOT結(jié)構(gòu)的反向恢復時間為150ns,與同類產(chǎn)品相比降低了約25%。
[Abstract]:In recent years, the intelligent power chip because of its high efficiency and high reliability has been more and more attention. In the smart power chip, fast recovery diode (FRD) as the main lateral insulated gate bipolar transistor (LIGBT) of the freewheeling diode, fast recovery diode characteristics especially has an important influence on the the reverse recovery characteristics of the intelligent power chip power consumption and reliability. At present the fast recovery diode research for the breakdown characteristics of the vertical structure and the structure of SOI-FRD and its reverse recovery characteristics of less concern. Therefore, the urgent need to optimize SOI-FRD reverse recovery characteristics, the China's independent research and development of intelligent power is important driving chip. This paper research the domestic and foreign research status of FRD and commonly used technology, a detailed analysis of the reverse recovery characteristics of FRD The power switch of LIGBT and intelligent power driver chip. Then explore the influence factors of FRD reverse recovery characteristics from two aspects of theory and simulation, and through the establishment of diode reverse recovery analytical model, this paper presents a new PT-IDDOT fast recovery diode structure. A new structure in the drift region in the preparation of two the asymmetric deep trench to improve the breakdown voltage of the device, so as to shorten the length of the drift region, the device effectively reduces the reverse recovery time, improve the switching speed of the device. On the other hand, in the reverse recovery process, the gap between the two deep trench will capture the minority carrier at the same time, the Ptop layer between the deep trench will produce a few the carrier, to ensure that there is sufficient to maintain the minority carrier devices reverse recovery process, improve device reverse recovery softness. The use of power semiconductor device simulation software Sentaur The characteristics of us TCAD on PT-IDDOT fast recovery diode is simulated. The simulation results show that the reverse PT-IDDOT fast recovery diode recovery time is 69ns, comparing with the traditional structure reduces the 37.5%. S0I platform is taped out in 0.5gm process, the test results show that the PT-IDDOT structure of the reverse recovery time 150ns, compared with similar products is reduced by about 25%.

【學位授予單位】：東南大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：TN31

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