本文關(guān)鍵詞：一款高精度低功耗電壓基準(zhǔn)的設(shè)計(jì)與實(shí)現(xiàn)　出處：《半導(dǎo)體技術(shù)》2017年11期 　論文類(lèi)型：期刊論文

  更多相關(guān)文章： 高精度 低功耗 電壓基準(zhǔn) 溫度系數(shù) 線(xiàn)性調(diào)整率 負(fù)載調(diào)整率

【摘要】：設(shè)計(jì)了一款高輸出電壓情況下的高精度低功耗電壓基準(zhǔn)電路。電路采用了比例采樣負(fù)反饋結(jié)構(gòu)達(dá)到較高和可控的輸出電壓,并利用曲率補(bǔ)償電路極大地減小了輸出電壓的溫度系數(shù)。針對(duì)較寬輸入電壓范圍內(nèi)的超低線(xiàn)性調(diào)整率規(guī)格,給出了多級(jí)帶隙級(jí)聯(lián)的電路結(jié)構(gòu)。針對(duì)功耗和超低負(fù)載調(diào)整率的問(wèn)題,電路采用了基于運(yùn)算放大器的限流模式和內(nèi)置大尺寸橫向擴(kuò)散金屬氧化物半導(dǎo)體(LDMOS)晶體管的設(shè)計(jì)。該電路在CSMC 0.25μm高壓BCD工藝條件下進(jìn)行設(shè)計(jì)、仿真和流片,測(cè)試結(jié)果表明,該電壓基準(zhǔn)輸出電壓為3.3 V,溫度系數(shù)為19.4×10~(-6)/℃,線(xiàn)性調(diào)整率為5.6μV/V,負(fù)載調(diào)整率為23.3μV/V,工作電流為45μA。
[Abstract]:A high - precision low - power consumption voltage reference circuit with high output voltage is designed . The circuit adopts proportional sampling negative feedback structure to achieve higher and controllable output voltage , and the circuit structure of multi - stage band gap cascade is greatly reduced by using curvature compensation circuit . According to the low power consumption and ultra - low load regulation rate , the circuit adopts a current - limiting mode based on operational amplifier and the design of built - in large - size lateral diffused metal oxide semiconductor ( LDMOS ) transistor . The circuit is designed , simulated and flow - chip based on operational amplifier . The test results show that the voltage reference output voltage is 3.3 V , the temperature coefficient is 19.4 脳 10 ~ ( -6 ) / 鈩，

本文編號(hào)：1393303