本文關鍵詞：一款高精度低功耗電壓基準的設計與實現　出處：《半導體技術》2017年11期 　論文類型：期刊論文

  更多相關文章： 高精度 低功耗 電壓基準 溫度系數 線性調整率 負載調整率

【摘要】：設計了一款高輸出電壓情況下的高精度低功耗電壓基準電路。電路采用了比例采樣負反饋結構達到較高和可控的輸出電壓,并利用曲率補償電路極大地減小了輸出電壓的溫度系數。針對較寬輸入電壓范圍內的超低線性調整率規(guī)格,給出了多級帶隙級聯(lián)的電路結構。針對功耗和超低負載調整率的問題,電路采用了基于運算放大器的限流模式和內置大尺寸橫向擴散金屬氧化物半導體(LDMOS)晶體管的設計。該電路在CSMC 0.25μm高壓BCD工藝條件下進行設計、仿真和流片,測試結果表明,該電壓基準輸出電壓為3.3 V,溫度系數為19.4×10~(-6)/℃,線性調整率為5.6μV/V,負載調整率為23.3μV/V,工作電流為45μA。
[Abstract]:A high - precision low - power consumption voltage reference circuit with high output voltage is designed . The circuit adopts proportional sampling negative feedback structure to achieve higher and controllable output voltage , and the circuit structure of multi - stage band gap cascade is greatly reduced by using curvature compensation circuit . According to the low power consumption and ultra - low load regulation rate , the circuit adopts a current - limiting mode based on operational amplifier and the design of built - in large - size lateral diffused metal oxide semiconductor ( LDMOS ) transistor . The circuit is designed , simulated and flow - chip based on operational amplifier . The test results show that the voltage reference output voltage is 3.3 V , the temperature coefficient is 19.4 脳 10 ~ ( -6 ) / 鈩，

本文編號：1393303