本文關鍵詞：鑄錠法中籽晶、成核點及坩堝底部設置方法專利技術綜述　出處：《中國材料進展》2017年04期 　論文類型：期刊論文

  更多相關文章： 鑄錠法 硅 晶體 成核 籽晶 坩堝

【摘要】：近年來,隨著太陽能電池技術在中國的迅猛發(fā)展,晶體硅制造技術也逐漸發(fā)展起來。鑄錠法作為晶體硅的主要制備方法之一,其發(fā)展方向受到了國內(nèi)外的普遍關注。本文在調研大量國內(nèi)外相關專利技術的基礎上,綜述了近幾十年來國內(nèi)外研究機構在鑄錠法制備晶體硅方面所采用的技術手段,主要歸類為以下三個方面:籽晶、成核點和坩堝底部設置。通過對比國內(nèi)外技術以及分析國內(nèi)重要申請人的專利申請,尋找國內(nèi)外技術差距和國內(nèi)技術演進方向,在如何調節(jié)晶粒生長速度、降低晶體的缺陷密度、提高晶體質量以適應太陽能電池的制造等亟需解決的技術問題方面提出一些方案。
[Abstract]:In recent years, with the rapid development of solar cell technology in China, crystal silicon manufacturing technology has been gradually developed. Ingot method as one of the main preparation methods of crystal silicon. The direction of its development has received widespread attention at home and abroad. This paper investigates a large number of domestic and foreign related patent technology on the basis of. The technical methods used by domestic and foreign research institutions in the preparation of crystal silicon by ingot method in recent decades are reviewed. The main methods are classified as three aspects: seed crystal. By comparing the domestic and foreign technology and analyzing the patent application of the important domestic applicants, we can find out the technology gap and the direction of the domestic technology evolution, and how to adjust the grain growth rate. Some technical problems which need to be solved such as reducing the density of crystal defects and improving crystal quality to adapt to the manufacture of solar cells are put forward.
【作者單位】： 國家知識產(chǎn)權局專利局專利審查協(xié)作江蘇中心;
【分類號】：TM914.4;TN304.12
【正文快照】： 游巧1前言晶體硅作為目前最主要的太陽能電池原料,其質量直接影響到太陽能電池的光電轉換效率,受到了人們廣泛關注。提拉法和鑄錠法是目前晶體硅制備方法中最常見的兩種方法。提拉法具有產(chǎn)率低、成本高等缺點,使得成本低、產(chǎn)率高且氧含量低的鑄錠法迅速發(fā)展起來。然而,硅晶鑄，

本文編號：1381235