本文關(guān)鍵詞：氮摻雜氧化鎵薄膜為過渡層制備氮化鎵納米線及其探測(cè)器　出處：《哈爾濱工業(yè)大學(xué)》2015年博士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 氧化鎵薄膜 氮化鎵納米線 磁控濺射 化學(xué)氣相沉積 紫外探測(cè)器

【摘要】：氮化鎵(Ga N)納米線,作為典型的寬禁帶半導(dǎo)體納米材料,不僅具有Ga N體材料優(yōu)異的光電性能,還兼具了納米材料的特性,在激光器、發(fā)光二級(jí)管、紫外探測(cè)器和場(chǎng)效應(yīng)晶體管等納米光電器件中具有廣闊的應(yīng)用前景。但是,Ga N納米線在材料的制備上仍然存在催化劑粒子污染、制備成本高和參數(shù)復(fù)雜等問題,嚴(yán)重限制了Ga N納米線的質(zhì)量及其器件性能。本論文以氮摻雜氧化鎵(Ga_2O_3)薄膜為過渡層來制備無催化劑粒子污染的Ga N納米線,并利用Ga N納米線制備出一種金屬-半導(dǎo)體-金屬(MSM)型紫外探測(cè)器。本論文的主要研究?jī)?nèi)容有:采用磁控濺射法在藍(lán)寶石(0001)襯底上制備出高質(zhì)量的氮摻雜Ga_2O_3薄膜,研究了濺射氣壓、氮?dú)?N2)流量、薄膜厚度和退火氣氛對(duì)氮摻雜Ga_2O_3薄膜的表面形貌、結(jié)構(gòu)特性和光學(xué)性能的影響;采用化學(xué)氣相沉積(CVD)法,以氮摻雜Ga_2O_3薄膜為過渡層制備無催化劑粒子污染的Ga N納米線,研究了生長(zhǎng)溫度和氨氣(NH_3)流量對(duì)Ga N納米線的表面形貌、拉曼特性和發(fā)光性能的影響;以Ga N納米線為光敏材料,制備出一種MSM型紫外探測(cè)器,并對(duì)其性能進(jìn)行評(píng)價(jià)。磁控濺射法制備氮摻雜Ga_2O_3薄膜的試驗(yàn)研究表明,制備的氮摻雜Ga_2O_3薄膜表面光滑,表面粗糙度Ra均小于3nm。氮摻雜Ga_2O_3薄膜的晶體結(jié)構(gòu)為單斜晶系結(jié)構(gòu)。隨著濺射氣壓、N2流量和薄膜厚度的增加,氮摻雜Ga_2O_3薄膜的結(jié)晶性能先逐漸提高后變差。氮摻雜Ga_2O_3薄膜表現(xiàn)出良好的光學(xué)質(zhì)量,在400~800nm的可見光范圍內(nèi)的平均透過率大于80%。氮摻雜Ga_2O_3薄膜的光學(xué)帶隙隨著濺射氣壓的增加而變大,隨著N2流量和薄膜厚度的增加而減小。在800℃的N2、氧氣和空氣中分別退火后,氮摻雜Ga_2O_3薄膜的結(jié)晶性能均得到了改善,可見光區(qū)的平均透過率達(dá)到85%�；瘜W(xué)氣相沉積法制備Ga N納米線的試驗(yàn)研究表明,以氮摻雜Ga_2O_3薄膜為過渡層制備的Ga N納米線為單晶的六方纖鋅礦結(jié)構(gòu)。隨著生長(zhǎng)溫度從850℃增加到1000℃時(shí),Ga N產(chǎn)物的表面形貌由一維的納米線結(jié)構(gòu)變?yōu)槎嗝骟w的晶體顆粒。隨著NH_3流量從160sccm逐漸降低到80sccm時(shí),Ga N納米線的平均直徑逐漸變小。Ga N納米線表現(xiàn)出拉伸應(yīng)力的作用,拉伸應(yīng)力的大小隨著NH_3流量的降低而變小。Ga N納米線的光致發(fā)光譜由紫外發(fā)光峰(~365nm)和黃光發(fā)光峰(~590nm)組成。以Ga N納米線為光敏材料制備MSM型紫外探測(cè)器的試驗(yàn)研究表明,該紫外探測(cè)器具有2.3×10~(-6)A的暗電流和2.4×10~(-4)A的光電流,其光電流為Ga N薄膜基紫外探測(cè)器的92倍,但暗電流也同時(shí)增加。與Ga N薄膜基紫外探測(cè)器相比,Ga N納米線基紫外探測(cè)器具有更大的光響應(yīng)度和紫外/可見光抑制比,360nm附近的響應(yīng)度為2.52A/W、探測(cè)率為1.17×10~(12)cm·Hz~(1/2)·W-1。Ga N納米線基紫外探測(cè)器的量子效率遠(yuǎn)大于100%,說明該紫外探測(cè)器具有較高的光電導(dǎo)增益效應(yīng)。此外,紫外探測(cè)器的時(shí)間響應(yīng)特性重復(fù)性高和穩(wěn)定性好,響應(yīng)時(shí)間為22μs左右。
[Abstract]:Gan (Ga N) nanowires as a wide bandgap semiconductor nano materials typical, not only has the photoelectric properties of Ga N material is excellent, but also possesses a characteristic of nano material in laser, emitting two tubes, has the broad application prospect of UV detector and field effect transistors and nano optoelectronic devices. However, Ga N nanowires in material catalyst particle pollution still exists on the preparation, preparation of complex and high cost parameters, seriously limits the quality and performance of the device Ga N nanowires. The nitrogen doped gallium oxide (Ga_2O_3) thin films as transition layer to Ga N prepared without catalyst particle pollution nanowires and nanowires were prepared by a metal semiconductor metal (MSM) by Ga N UV detector. The main contents of this paper are: using magnetron sputtering on sapphire (0001) substrates prepared by nitrogen doped Ga_2O_ with high quality The 3 film, study the sputtering pressure, nitrogen flow rate (N2), the surface morphology of thin film thickness and annealing atmosphere on nitrogen doped Ga_2O_3 films, effects of structure characteristics and optical properties; by chemical vapor deposition (CVD) method with nitrogen doped Ga_2O_3 film as buffer layer preparation without pushing Ga N catalyst particle pollution the nanowires on the growth temperature and ammonia (NH_3) surface flow on Ga N nanowires, Raman and luminescence properties of N nanowires; with Ga as the photosensitive material, the preparation of a MSM type UV detector, and to evaluate its performance. Experimental study on nitrogen doped Ga_2O_3 thin films prepared by magnetron sputtering show that the preparation of nitrogen doped Ga_2O_3 thin films with smooth surface, crystal structure and surface roughness of Ra was less than 3nm. of nitrogen doped Ga_2O_3 films is monoclinic structure. With the increase of sputtering pressure, flow rate and thickness of N2 thin film, nitrogen doped Ga_2O_3 thin films The crystallinity increased at first then worse. Nitrogen doped Ga_2O_3 thin films exhibit good optical quality, in the visible range of 400~800nm the average optical transmittance higher than 80%. of nitrogen doped Ga_2O_3 band gap of the films increased with the sputtering pressure increases, decreases with the increase of N2 flow rate and film thickness in 800. C N2, oxygen and air respectively after annealing, the crystallization properties of nitrogen doped Ga_2O_3 thin films were improved, the visible transmittance reached 85%. study on Preparation of Ga chemical vapor phase deposition method N nanowires show that with nitrogen doped Ga_2O_3 film Ga transition layer of N nanowires prepared by six square single crystal wurtzite structure. With the growth temperature increased from 850 degrees to 1000 degrees, the surface morphology of Ga nanowires by N products into the crystal structure of one dimensional polyhedron. With NH_3 flow from the 160sccm gradually reduced to 80 sccm鏃，

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